FJD3076 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FJD3076

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 32

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 130

Noise Figure, dB: -

Package of FJD3076 transistor: TO252(DPAK)

FJD3076 Equivalent Transistors - Cross-Reference Search

FJD3076 PDF document for downloads:

1.1. fjd3076.pdf Size:47K _fairchild_semi

FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Dissipation (Ta=25°C) 1 W Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 32 V BVCBO Collector-Base Breakdown Voltage IC = 50µA40 V BVEBO Emitter-Base Breakdown Voltage IE = 50µA5 V ICBO Collector Cut-off Current VCB = 20V, IE = 0 1 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 1 µA hFE DC Current Gain VCE = 3V, IC= 0.5A 130 390 VCE(sat) Collector-Emi

See also transistors datasheet: BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D , TIP31C , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , FJI5603D , FJL4215 .

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