ZXTNS618MC Transistor Datasheet. Parameters and Characteristics.

Type Designator: ZXTNS618MC

Material of transistor: Si

Polarity: NPN*Schottky

Maximum collector power dissipation (Pc), W: 1.5

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 4.5

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 300

Noise Figure, dB: -

Package of ZXTNS618MC transistor: W-DFN3020-8_Type_B

ZXTNS618MC Equivalent Transistors - Cross-Reference Search

ZXTNS618MC PDF document for downloads:

1.1. zxtns618mc.pdf Size:269K _diodes

A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data • Case: DFN3020B-8 NPN Transistor • Case Material: Molded Plastic, “Green” Molding Component • BVCEO > 20V • Terminals: Pre-Plated NiPdAu leadframe • IC = 4.5A Continuous Collector Current • Nominal package height: 0.8mm • Low Saturation Voltage (150mV max @ 1A) • UL Flammability Rating 94V-0 • RSAT = 47m? for a low equivalent On-Resistance • Moisture Sensitivity: Level 1 per J-STD-020 • hFE characterized up to 6A for high current gain hold up • Weight: 0.013 grams (approximate) Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current Applications • Low VF < 500mV (@1A) for reduced power loss • DC – DC Converters • Fast switching due to Schottky barrier • Charging circuits Low profile 0.8mm high package for thin applications • Mobile phones R?JA efficient, 40% lower

See also transistors datasheet: MMSTA14 , MMSTA63 , MMSTA64 , ZHB6718 , ZHB6790 , ZHB6792 , ZUMTS17N , ZXTN04120HFF , 8550 , ZXTP05120HFF , ZXTPS717MC , ZXTPS718MC , ZXTPS720MC , 12A02CH , 12A02MH , 15C01M , 15C01SS .

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