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BC856BL Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC856BL

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.225

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 65

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 220

Noise Figure, dB: -

Package of BC856BL transistor: SOT23-3

BC856BL Equivalent Transistors - Cross-Reference Search

BC856BL PDF document for downloads:

4.1. bc856bs.pdf Size:93K _philips

BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 01 — 11 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP JEITA BC856BS SOT363 SC-88 BC846BS BC846BPN 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors AEC-Q101 qualified 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage open base - - -65 V IC collector current - - -100 mA hFE DC current gain VCE = -5V; 200 290 450 IC = -2mA BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP gen

4.2. bc856bwt1_bc857bwt1_bc858awt1-series.pdf Size:143K _onsemi

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC--70/SOT--323 which is designed for low power surface mount applications. 1 BASE Features ? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER 3 SC--70/SOT--323 CASE 419 MAXIMUM RATINGS (TA =25?C unless otherwise noted) 1 STYLE 3 2 Rating Symbol Value Unit Collector-Emitter Voltage BC856 VCEO --65 V BC857 --45 MARKING DIAGRAM BC858 --30 Collector-Base Voltage BC856 VCBO --80 V BC857 --50 xx M G BC858 --30 G Emitter--Base Voltage VEBO --5.0 V 1 Collector Current -- Continuous IC --100 mAdc xx = Specific Device Code THERMAL CHARACTERISTICS M = Date Code* G = Pb--Free Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation FR-- 5 Board, PD 150 mW

4.3. bc856bm3t5g-d.pdf Size:55K _onsemi

BC856BM3T5G Preferred Devices General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-723 which is designed for low power surface mount applications. http://onsemi.com • This is a Pb-Free Device COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO -65 V Collector-Base Voltage VCBO -80 V 2 EMITTER Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -100 mA MARKING THERMAL CHARACTERISTICS DIAGRAM 3 Characteristic Symbol Max Unit SOT-723 Total Device Dissipation FR- 5 Board PD 265 mW 3B M CASE 631AA (Note 1) 2 STYLE 1 TA = 25°C 1 Derate above 25°C 2.1 mW/°C Thermal Resistance, RqJA 470 °C/W 3B = Specific Device Code Junction to Ambient (Note 1) M = Date Code Total Device Dissipation PD 640 mW Alumina Substrate (Note 2) ORDERING INFORMATION TA = 25°C Derate above 25°C 5.1 mW/°C Device Package Shipping† Thermal Resista

4.4. bc856bdw1t1g_bc857bdw1t1g_bc858cdw1t1g.pdf Size:172K _onsemi

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO V BC856 -65 SOT-363/SC-88 BC857 -45 CASE 419B BC858 -30 STYLE 1 Collector-Base Voltage VCBO V BC856 -80 BC857 -50 MARKING DIAGRAM BC858 -30 Emitter-Base Voltage VEBO -5.0 V Collector Current -Continuous IC -100 mAdc 3x M G G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation Per Device PD 380 mW 3x = Specific Device Code FR-5 Board (Note 1) 250 x = B, F, G, or L TA = 25°C Derate Above 25°C 3.0 mW/°C (See Ordering Information) M = D

4.5. bc856bdw_bc857_bc858.pdf Size:1005K _wietron

BC856BDW Series PNP Dual General Purpose Transistors 2 1 3 P b Lead(Pb)-Free 6 5 4 1 2 3 4 5 6 PNP+PNP SOT-363(SC-88) Maximum Ratings Rating Symbol BC856 BC857 BC858 Unit 65 45 30 Collector-Emitter Voltage VCEO V 80 50 30 Collector-Base Voltage VCBO V 5.0 5.0 5.0 Emitter-Base Voltage VEBO V Collector Current-Continuous IC 100 100 100 mA Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation Per Device 380 mW FR-5 Board(1)TA = 25°C PD 250 Derate Above 25°C 3.0 mW/ °C R?JA Thermal Resistance, Junction to Ambient 328 °C/W Tj Junction Temperature Range +150 °C Storage Temperature Range Tstg -55 to +150 °C Note : FR-5=1.0 x 0.75 x 0.062 inch Device Marking BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L WEITRON 1/6 14-Nov-07 http://www.weitron.com.tw BC856BDW Series Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Symbol Typ Unit Min Max Off Characteristics Coll

See also transistors datasheet: BC848CL , BC848CPD , BC849BL , BC849CL , BC850BL , BC850CL , BC856 SERIES , BC856AL , 2N5088 , BC857AL , BC857BDW1 , BC857BL , BC857CDW1 , BC857CL , BC858AL , BC858BL , BC858CDXV6 .

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