All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N5550
  2N5550
  2N5550
 
2N5550
  2N5550
  2N5550
 
2N5550
  2N5550
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU526A/6
BU526A/7 .. BUL742C
BUL74A .. BUV47
BUV47A .. BUX83/9
BUX84 .. C945
C945LT1 .. CENW45
CF103 .. CJD47
CJD50 .. CMPTA63
CMPTA64 .. CS9018
CS9018D .. CSC1047
CSC1047B .. CSD1638
CSD1733 .. D11C1051
D11C1053 .. D39J6
D39J7 .. D45C4
D45C5 .. DMB2227A
DMJT9435 .. DTA123JUB
DTA123Y .. DTC143ZE
DTC143ZEA .. DZTA42
DZTA92 .. ECG361
ECG362 .. ESM138
ESM139 .. FC106
FC107 .. FJV4108R
FJV4109R .. FMMT5131
FMMT5132 .. FT4024
FT4025 .. GC181A
GC189 .. GES4926
GES4927 .. GI3638A
GI3641 .. GT3110A-2
GT311A .. HA7633
HA7723 .. HN2A26FS
HN2C01FE .. IDA1146
IDA1263 .. JE5401A
JE5401B .. KGS1002
KGS1003 .. KRA733F
KRA733U .. KRC668U
KRC669E .. KSA709-G
KSA709-O .. KSC2690A
KSC2690A-O .. KSD261-O
KSD261-R .. KSR2112
KSR2113 .. KT315N
KT315N-1 .. KT6111V
KT6112A .. KT8130A
KT8130B .. KT855V
KT856A .. KTA1807L
KTA1834D .. KTC9013
KTC9013S .. MA4103
MA4104 .. MH8211
MH8212 .. MJB44H11
MJB45H11 .. MJE4342
MJE4343 .. MM4209
MM4209A .. MMBT4965
MMBT5087L .. MMUN2215
MMUN2215L .. MP4052
MP4053 .. MPQ5858
MPQ5910 .. MPS929
MPS929A .. MRF455
MRF458 .. NA01F
NA01FG .. NB011HJ
NB011HK .. NB211EG
NB211EH .. NESG2021M16
NESG2030M04 .. NPS3903R
NPS3904 .. NSS60200LT1G
NSS60201LT1G .. OC480
OC480K .. PBSS4021PT
PBSS4032ND .. PEMD18
PEMD19 .. PN4403
PN4888 .. Q-00269A
Q-00369C .. RN1317
RN1318 .. RN2411
RN2412 .. RT657M
RT679M .. SD409
SD410 .. SGS911
SGS912 .. SRA2203S
SRA2203SF .. STB13007DT4
STB205L .. SUT465N
SUT466N .. TA1763
TA1763A .. TI814
TI815 .. TIPL757
TIPL757A .. TN3444
TN3467 .. TP4889
TP4890 .. UMH13N
UMH15N .. UN6218
UN6219 .. ZT1702
ZT1708 .. ZTX3701L
ZTX3701M .. ZXTN649F
ZXTNS618MC .. ZXTPS720MC
 
2N5550 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5550 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5550

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N5550 transistor: TO92

2N5550 Equivalent Transistors - Cross-Reference Search

2N5550 PDF doc:

1.1. 2n5550_2n5551.pdf Size:188K _motorola

2N5550
2N5550
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown V

1.2. 2n5550_2n5551_3.pdf Size:49K _philips

2N5550
2N5550
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter • Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N5550 - 160 V 2N5551 - 180 V VCEO collector-emitter voltage open base 2N5550 - 140 V 2N5551 - 160 V VEBO emitter-base voltag

1.3. 2n5550_2n5551_2.pdf Size:53K _philips

2N5550
2N5550
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter • Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION 2N5550 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 2N5551 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collect

1.4. 2n5550.pdf Size:329K _fairchild_semi

2N5550
2N5550
AmpIifier Transistor • Collector-Emitter Voltage: VCEO= 140V • Collector Dissipation: PC (max)=625mW TO-92 1. Emitter 2. Base 3. Collector NPN EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25°C unless otherwise noted SymboI Parameter VaIue Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C • Refer to 2N5551 for graphs EIectricaI Characteristics Ta=25°C unless otherwise noted SymboI Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 160 V BVCEO * Collector-Emitter Breakdown Voltage IC=1mA, IB=0 140 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V ICBO Collector Cut-off Current VCB=100V, IE=0 100 nA IEBO Emitter Cut-off Current VEB= 4V, IC=0 50 nA hFE * DC Current Gain IC=1mA, VCE=

1.5. 2n5550_2n5551.pdf Size:64K _central

2N5550
2N5550
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.6. 2n5550_2n5551.pdf Size:88K _onsemi

2N5550
2N5550
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current - Continuous IC 600 mAdc STYLE 1 Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C 1 1 2 2 Total Device Dissipation @ TC = 25°C PD 1.5 W 3 3 Derate above 25°C 12 mW/°C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Operating and Storage Junction TJ, Tstg -55 to +150 °C AMMO PACK Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings a

1.7. 2n5550.pdf Size:122K _secos

2N5550
2N5550
2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage TO-92 Applications such as telephony Low current(max.600mA) High voltage(max.160V) G H J Millimeter REF. A D Min. Max. A 4.40 4.70 Collector B B 4.30 4.70 3 C 12.70 - K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 2 E C F G 1.27 TYP. H 1.10 - Base J 2.42 2.66 K 0.36 0.76 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 160 V Collector to Emitter Voltage VCEO 140 V Emitter to Base Voltage VEBO 6 V Collector Current - Continuous IC 0.6 A Collector Power Dissipation PC 0.625 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL M

1.8. 2n5550.pdf Size:206K _cdil

2N5550
2N5550
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 140 V VCBO Collector Base Voltage 160 V VEBO Emitter Base Voltage 6V IC Collector Current Continuous 600 mA PD Power Dissipation@ Ta=25?C 625 mW Derate Above 25?C 5.0 mW/?C PD Power Dissipation@ Tc=25?C 1.5 W Derate Above 25?C 12 mW/?C Tj, Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) (1) Junction to ambient 357 ?C/W Rth(j-c) Junction to case 125 ?C/W (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board Continental Device India Limited Data Sheet Page 1 of 4 NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TR

1.9. 2n5550.pdf Size:32K _kec

2N5550
2N5550
SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=160V, VCEO=140V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=100nA(Max.), VCB=100V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.25V(Max.), IC=50mA, IB=5mA H 0.45 _ Low Noise : NF=10dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V TO-92 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1997. 5. 2 Revision No : 0 1/2 A J C L M 2N5550 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTE

1.10. 2n5550s.pdf Size:33K _kec

2N5550
2N5550
SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=160V, VCEO=140V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=100nA(Max.) VCB=100V J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Low Saturation Voltage L 0.55 P P : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA M 0.20 MIN N 1.00+0.20/-0.10 Low Noise : NF=10dB (Max.) P 7 M 1. EMITTER MAXIMUM RATING (Ta=25 ) 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V SOT-23 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Marking Tstg -55 150 Storage Temperature Range Lot No. Note : * Package Mounted On 99.5% Alum

1.11. 2n5550.pdf Size:199K _lge

2N5550
2N5550
2N5550(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 160 V IC=100?A,IE=0 Collector-emitter breakdown V(BR)CEO IC=1mA, IB=0 140 V voltage Emitter-base breakdown voltage V(BR)EBO 6 V IE=10?A, IC=0 Collector cut-off current ICBO VCB=100V,IE=0 0.1 ?A Emitter cut-

See also transistors datasheet: 2N5537 , 2N5538 , 2N5539 , 2N554 , 2N5540 , 2N5541 , 2N5542 , 2N555 , BC237 , 2N5551 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , 2N5560 .

Keywords

 2N5550 Datasheet  2N5550 Datenblatt  2N5550 RoHS  2N5550 Distributor
 2N5550 Application Notes  2N5550 Component  2N5550 Circuit  2N5550 Schematic
 2N5550 Equivalent  2N5550 Cross Reference  2N5550 Data Sheet  2N5550 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com