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2N5550 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N5550

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.31 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

2N5550 Transistor Equivalent Substitute - Cross-Reference Search

2N5550 PDF doc:

1.1. 2n5550_2n5551.pdf Size:188K _motorola

2N5550
2N5550

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage VEB

1.2. 2n5550_2n5551_3.pdf Size:49K _philips

2N5550
2N5550

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 em

1.3. 2n5550_2n5551_2.pdf Size:53K _philips

2N5550
2N5550

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emi

1.4. 2n5550.pdf Size:329K _fairchild_semi

2N5550
2N5550

AmpIifier Transistor • Collector-Emitter Voltage: VCEO= 140V • Collector Dissipation: PC (max)=625mW TO-92 1. Emitter 2. Base 3. Collector NPN EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25°C unless otherwise noted SymboI Parameter VaIue Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collecto

1.5. 2n5550_2n5551.pdf Size:64K _central

2N5550
2N5550

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.6. 2n5550_2n5551.pdf Size:88K _onsemi

2N5550
2N5550

2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current -

1.7. 2n5550.pdf Size:122K _secos

2N5550
2N5550

2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage TO-92 Applications such as telephony Low current(max.600mA) High voltage(max.160V) G H J Millimeter REF. A D Min. Max. A 4.40 4.70 Collector B B

1.8. 2n5550.pdf Size:206K _cdil

2N5550
2N5550

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 140 V VCBO Coll

1.9. 2n5550.pdf Size:32K _kec

2N5550
2N5550

SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=160V, VCEO=140V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=100nA(Max.), VCB=100V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.25V(Max.), I

1.10. 2n5550s.pdf Size:33K _kec

2N5550
2N5550

SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=160V, VCEO=140V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=100nA(Max.) VCB=100V J 0.13+0.10/

1.11. 2n5550.pdf Size:199K _lge

2N5550
2N5550

2N5550(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 160 V VCEO C

1.12. 2n5550-1s.pdf Size:1188K _first_silicon

2N5550
2N5550

SEMICONDUCTOR 2N5550S TECHNICAL DATA 2N5551S High Voltage Transistors FEATURE Pb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping F0 3000/Tape&Reel 2N5550S 3 F1 3000/Tape&Reel 2N5551S 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc SOT–23 Collector–Base Voltage V CBO 160 Vdc

Datasheet: 2N5537 , 2N5538 , 2N5539 , 2N554 , 2N5540 , 2N5541 , 2N5542 , 2N555 , BC237 , 2N5551 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , 2N5560 .

 


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