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2N5550
  2N5550
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2N5550
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  2N5550
 
2N5550
  2N5550
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2N5550 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5550 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5550

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N5550 transistor: TO92

2N5550 Equivalent Transistors - Cross-Reference Search

2N5550 PDF doc:

1.1. 2n5550_2n5551.pdf Size:188K _motorola

2N5550
2N5550
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown V

1.2. 2n5550_2n5551_3.pdf Size:49K _philips

2N5550
2N5550
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter • Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N5550 - 160 V 2N5551 - 180 V VCEO collector-emitter voltage open base 2N5550 - 140 V 2N5551 - 160 V VEBO emitter-base voltag

1.3. 2n5550_2n5551_2.pdf Size:53K _philips

2N5550
2N5550
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter • Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION 2N5550 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 2N5551 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collect

1.4. 2n5550.pdf Size:329K _fairchild_semi

2N5550
2N5550
AmpIifier Transistor • Collector-Emitter Voltage: VCEO= 140V • Collector Dissipation: PC (max)=625mW TO-92 1. Emitter 2. Base 3. Collector NPN EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25°C unless otherwise noted SymboI Parameter VaIue Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C • Refer to 2N5551 for graphs EIectricaI Characteristics Ta=25°C unless otherwise noted SymboI Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 160 V BVCEO * Collector-Emitter Breakdown Voltage IC=1mA, IB=0 140 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V ICBO Collector Cut-off Current VCB=100V, IE=0 100 nA IEBO Emitter Cut-off Current VEB= 4V, IC=0 50 nA hFE * DC Current Gain IC=1mA, VCE=

1.5. 2n5550_2n5551.pdf Size:64K _central

2N5550
2N5550
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.6. 2n5550_2n5551.pdf Size:88K _onsemi

2N5550
2N5550
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current - Continuous IC 600 mAdc STYLE 1 Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C 1 1 2 2 Total Device Dissipation @ TC = 25°C PD 1.5 W 3 3 Derate above 25°C 12 mW/°C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Operating and Storage Junction TJ, Tstg -55 to +150 °C AMMO PACK Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings a

1.7. 2n5550.pdf Size:122K _secos

2N5550
2N5550
2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage TO-92 Applications such as telephony Low current(max.600mA) High voltage(max.160V) G H J Millimeter REF. A D Min. Max. A 4.40 4.70 Collector B B 4.30 4.70 3 C 12.70 - K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 2 E C F G 1.27 TYP. H 1.10 - Base J 2.42 2.66 K 0.36 0.76 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 160 V Collector to Emitter Voltage VCEO 140 V Emitter to Base Voltage VEBO 6 V Collector Current - Continuous IC 0.6 A Collector Power Dissipation PC 0.625 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL M

1.8. 2n5550.pdf Size:206K _cdil

2N5550
2N5550
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 140 V VCBO Collector Base Voltage 160 V VEBO Emitter Base Voltage 6V IC Collector Current Continuous 600 mA PD Power Dissipation@ Ta=25?C 625 mW Derate Above 25?C 5.0 mW/?C PD Power Dissipation@ Tc=25?C 1.5 W Derate Above 25?C 12 mW/?C Tj, Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) (1) Junction to ambient 357 ?C/W Rth(j-c) Junction to case 125 ?C/W (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board Continental Device India Limited Data Sheet Page 1 of 4 NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TR

1.9. 2n5550.pdf Size:32K _kec

2N5550
2N5550
SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=160V, VCEO=140V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=100nA(Max.), VCB=100V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.25V(Max.), IC=50mA, IB=5mA H 0.45 _ Low Noise : NF=10dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V TO-92 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1997. 5. 2 Revision No : 0 1/2 A J C L M 2N5550 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTE

1.10. 2n5550s.pdf Size:33K _kec

2N5550
2N5550
SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=160V, VCEO=140V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=100nA(Max.) VCB=100V J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Low Saturation Voltage L 0.55 P P : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA M 0.20 MIN N 1.00+0.20/-0.10 Low Noise : NF=10dB (Max.) P 7 M 1. EMITTER MAXIMUM RATING (Ta=25 ) 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V SOT-23 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Marking Tstg -55 150 Storage Temperature Range Lot No. Note : * Package Mounted On 99.5% Alum

1.11. 2n5550.pdf Size:199K _lge

2N5550
2N5550
2N5550(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 160 V IC=100?A,IE=0 Collector-emitter breakdown V(BR)CEO IC=1mA, IB=0 140 V voltage Emitter-base breakdown voltage V(BR)EBO 6 V IE=10?A, IC=0 Collector cut-off current ICBO VCB=100V,IE=0 0.1 ?A Emitter cut-

See also transistors datasheet: 2N5537 , 2N5538 , 2N5539 , 2N554 , 2N5540 , 2N5541 , 2N5542 , 2N555 , BC237 , 2N5551 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , 2N5560 .

Keywords

 2N5550 Datasheet  2N5550 Datenblatt  2N5550 RoHS  2N5550 Distributor
 2N5550 Application Notes  2N5550 Component  2N5550 Circuit  2N5550 Schematic
 2N5550 Equivalent  2N5550 Cross Reference  2N5550 Data Sheet  2N5550 Fiche Technique

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