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2N5551
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2N5551
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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
2N5551 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5551 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5551

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 180

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N5551 transistor: TO92

2N5551 Equivalent Transistors - Cross-Reference Search

2N5551 PDF doc:

1.1. 2n5550_2n5551.pdf Size:188K _motorola

2N5551
2N5551
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 2904, STYLE 1 TO92 (TO226AA) CollectorEmitter Voltage VCEO 140 160 Vdc CollectorBase Voltage VCBO 160 180 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown V

1.2. 2n5550_2n5551_2.pdf Size:53K _philips

2N5551
2N5551
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION 2N5550 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 2N5551 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collect

1.3. 2n5550_2n5551_3.pdf Size:49K _philips

2N5551
2N5551
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N5550 - 160 V 2N5551 - 180 V VCEO collector-emitter voltage open base 2N5550 - 140 V 2N5551 - 160 V VEBO emitter-base voltag

1.4. 2n5551_mmbt5551.pdf Size:171K _fairchild_semi

2N5551
2N5551
June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on

1.5. 2n5551.pdf Size:216K _fairchild_semi

2N5551
2N5551
April 2006 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on

1.6. 2n5551.pdf Size:53K _samsung

2N5551
2N5551
2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V TO-92 Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit 180 Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 160 V V Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 6 Collector Cut-off Current ICBO VCB=120V, IE=0 nA 50 Emitter Cut-off Current nA IEBO VEB= 4V, IC=0 50 DC Current Gain hFE IC=1mA, VCE=5V 80 IC=10mA, VCE=5V 80 250 IC=50mA, VCE=5V 30 IC=10mA, IB=1mA Collector-Emitter Sat

1.7. 2n5550_2n5551.pdf Size:64K _central

2N5551
2N5551
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.8. 2n5551_to-92.pdf Size:208K _mcc

2N5551
2N5551
MCC Micro Commercial Components TM 2N5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features This device is designed for general purpose high voltage amplifiers NPN General and gas discharge display drivers. Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistor Marking:Type number Lead Free Finish/Rohs Compliant ("P"Suffix designates Compliant. See ordering information) TO-92 AE Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V B V Emitter-Base Voltage 6.0 V EBO IC Collector Current 600 mA P Collector Power Dissipation 625 mW C O TJ Operating Junction Temperature -55 to +150 C O T Storage Temperature -55 to +150 C STG O Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units C OFF CHARACTERISTICS V(BR)CEO Collector-Emitt

1.9. 2n5550_2n5551.pdf Size:88K _onsemi

2N5551
2N5551
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current - Continuous IC 600 mAdc STYLE 1 Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C 1 1 2 2 Total Device Dissipation @ TC = 25C PD 1.5 W 3 3 Derate above 25C 12 mW/C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Operating and Storage Junction TJ, Tstg -55 to +150 C AMMO PACK Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings a

1.10. 2n5551.pdf Size:178K _utc

2N5551
2N5551
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? FEATURES * High collector-emitter voltage: VCEO=160V * High current gain ? APPLICATIONS * Telephone switching circuit * Amplifier ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-AB3-R SOT-89 B C E Tape Reel 2N5551L-x-T92-B 2N5551G-x-T92-B TO-92 E B C Tape Box 2N5551L-x-T92-K 2N5551G-x-T92-K TO-92 E B C Bulk 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B TO-92 E C B Tape Box 2N5551L-x-T92-A-K 2N5551G-x-T92-A-K TO-92 E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter ? MARKING INFORMATION PACKAGE MARKING SOT-89 TO-92 www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R201-002.D 2N5551 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATINGS (TA=25?C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VC

1.11. 2n5551.pdf Size:217K _auk

2N5551
2N5551
2N5551 NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier C • High voltage application Features B • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : E VCE(sat)=0.5V(MAX.) TO-92 • Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C KSD-T0A034-000 1 E B C 2N5551 Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100?A, IE=0 180 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 160 - - V Emitter-Base br

1.12. 2n5551.pdf Size:203K _secos

2N5551
2N5551
2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55±0.2 3.5±0.2 FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.08 –0.07 46+0.1 0. –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collector 2.54±0.1 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Para meter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Dissipation 0.625 W TJ, Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Test conditions MIN TYP MAX UNIT Symbol Collector-base breakdown voltage V(BR)CBO 180 V Ic= 100 ?A,IE=0 Collector-emitter breakdown V(BR)CEO* Ic= 1mA, IB=0 160 V voltage Emitter-base

1.13. 2n5551.pdf Size:279K _cdil

2N5551
2N5551
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector -Base Voltage VCBO 180 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 600 mA Power Dissipation @Ta=25 degC PD 625 mW Derate Above 25 deg C 5.0 mw/deg C Power Dissipation @Tc=25 degC PD 1.5 W Derate Above 25 deg C 12 mw/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 125 deg C/W Junction to Ambient Rth(j-a) (1) 357 deg C/W (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTI

1.14. 2n5551s.pdf Size:33K _kec

2N5551
2N5551
SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=180V, VCEO=160V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=50nA(Max.) VCB=120V J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Low Saturation Voltage L 0.55 P P : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA M 0.20 MIN N 1.00+0.20/-0.10 Low Noise : NF=8dB (Max.) P 7 M 1. EMITTER MAXIMUM RATING (Ta=25 ) 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V SOT-23 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Marking Lot No. Tstg -55 150 Storage Temperature Range Note : * Package Mounted On 99.5% Alumina

1.15. 2n5551.pdf Size:32K _kec

2N5551
2N5551
SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA H 0.45 _ Low Noise : NF=8dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V TO-92 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1997. 5. 2 Revision No : 0 1/2 A J C L M 2N5551 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERIS

1.16. 2n5551c.pdf Size:32K _kec

2N5551
2N5551
SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA H 0.45 _ Low Noise : NF=8dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. COLLECTOR 3. BASE CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V TO-92 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1997. 5. 2 Revision No : 0 1/2 A J C L M 2N5551C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTER

1.17. 2n5551.pdf Size:220K _lge

2N5551
2N5551
2N5551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 180 V Collector-emitter breakdown V(BR)CEO* IC= 1mA, IB=0 160 V voltage Emitter-base breakdown voltage V(BR)EBO IE= 10?A, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut

1.18. 2n5551.pdf Size:386K _wietron

2N5551
2N5551
2N5551 NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage V CEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc PD Total Device Dissipation T =25 C W A 0.625 Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 160 - Vdc - Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) V(BR)CBO 180 Vdc - Vdc V(BR)EBO 6.0 Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) ICBO - 0.05 uAdc Collector Cutoff Current (V =120 Vdc, IE=0) CB - IEBO Emitter Cutoff Current (VEB= 4.0 V c, I =0) 0.05 uAdc d C WEITRON http://www.weitron.com.tw 2N5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Max Characteristics Symbol Min TYP

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2N5551
2N5551
Spec. No. : HE6219 HI-SINCERITY Issued Date : 1992.09.21 Revised Date : 2004.12.28 MICROELECTRONICS CORP. Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...............

See also transistors datasheet: 2N5538 , 2N5539 , 2N554 , 2N5540 , 2N5541 , 2N5542 , 2N555 , 2N5550 , MJE13005 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , 2N5560 , 2N557 .

Keywords

 2N5551 Datasheet  2N5551 Datenblatt  2N5551 RoHS  2N5551 Distributor
 2N5551 Application Notes  2N5551 Component  2N5551 Circuit  2N5551 Schematic
 2N5551 Equivalent  2N5551 Cross Reference  2N5551 Data Sheet  2N5551 Fiche Technique

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