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MJD44E3 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJD44E3

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 0

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 1000

Noise Figure, dB: -

Package of MJD44E3 transistor: DPAK-4

MJD44E3 Equivalent Transistors - Cross-Reference Search

MJD44E3 PDF document for downloads:

1.1. mjd44e3r.pdf Size:80K _motorola

Order this document MOTOROLA by MJD44E3/D SEMICONDUCTOR TECHNICAL DATA MJD44E3* *Motorola Preferred Device Darlington Power Transistor DPAK For Surface Mount Application NPN DARLINGTON SILICON . . . for general purpose power and switching output or driver stages in applications POWER TRANSISTOR such as switching regulators, converters, and power amplifiers. 10 AMPERES 80 VOLTS • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) 20 WATTS • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix) • Electrically Similar to Popular D44E3 Device • High DC Gain — 1000 Min @ 5.0 Adc • Low Sat. Voltage — 1.5 V @ 5.0 Adc • Compatible With Existing Automatic Pick & Place Equipment IIIIIIIIIIIIIIIIIIIIIII CASE 369–07 MAXIMUM RATINGS IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII III IIIII Coll

5.1. mjd44h11_mjd45h11.pdf Size:192K _motorola

Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) 8 AMPERES • Straight Lead Version in Plastic Sleeves (“–1” Suffix) 80 VOLTS • Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix) 20 WATTS • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage — VCE(sat) = 1.0 Volt Max @ 8.0 Amperes • Fast Switching Speeds • Complementary Pairs Simplifies Designs IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII

5.2. mjd44h11_mjd45h11.pdf Size:211K _st

MJD44H11 MJD45H11 Complementary power transistors . Features ¦ Low collector-emitter saturation voltage ¦ Fast switching speed TAB2 ¦ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications ¦ Power amplifier DPAK TO-252 ¦ Switching circuits Description Figure 1. Internal schematic diagram The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel August 2009 Doc ID 5470 Rev 3 1/8 www.st.com 8 Absolute maximum ratings MJD44H11, MJD45H11 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 8 A ICM Collector peak current 16 A PT

5.3. mjd44h11.pdf Size:113K _fairchild_semi

March 2009 MJD44H11 NPN Epitaxial Silicon Transistor • General Purpose Power and Switching Such as Output or Driver Stages in Applications • D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, "- I" Suffix) • Electrically Similar to Popular MJE44H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector-Current (Pulse) 16 A TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Thermal Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Max. Units Tc = 25°C 20 Total Device Dissipation PD W Ta = 25°C 1.75 R?JC Thermal Resistance, Junction to Case 6.25 °C/W R?JA Thermal Resistance, Junction to Ambient 71.4 °C/W

5.4. mjd44h11_mjd45h11.pdf Size:108K _onsemi

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 8 AMPERES • Lead Formed for Surface Mount Application in Plastic Sleeves 80 VOLTS, 20 WATTS (No Suffix) • Straight Lead Version in Plastic Sleeves (“-1” Suffix) MARKING • Electrically Similar to Popular D44H/D45H Series DIAGRAMS • Low Collector Emitter Saturation Voltage - 4 AYWW VCE(sat) = 1.0 Volt Max @ 8.0 Amperes J4 • Fast Switching Speeds 2 xH11G 1 • Complementary Pairs Simplifies Designs 3 DPAK CASE 369C • Epoxy Meets UL 94 V-0 @ 0.125 in STYLE 1 • ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 4 • These are Pb-Free Packages AYWW MAXIMUM RATINGS J4 Rating Symbol Max Unit xH11G 1 Collector-Emitter Voltage VCEO

See also transistors datasheet: MJ21196 , MJB41C , MJB42C , MJB44H11 , MJB45H11 , MJB5742 , MJD128 , MJD253 , GT806B , MJE15032 , MJE15033 , MJE15034 , MJE15035 , MJF31C , MJF32C , MJF44H11 , MJF45H11 .

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