MJL3281A Datasheet, Equivalent, Cross Reference Search
Type Designator: MJL3281A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Collector Current |Ic max|: 15 A
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO3PBL TO264
MJL3281A Transistor Equivalent Substitute - Cross-Reference Search
MJL3281A Datasheet (PDF)
mjl3281a mjl1302a.pdf
Order this documentMOTOROLAby MJL3281A/DSEMICONDUCTOR TECHNICAL DATANPN*MJL3281APNPDesigner's Data Sheet*MJL1302AComplementary NPN-PNP*Motorola Preferred DeviceSilicon Powe
mjl3281a mjl1302a.pdf
MJL3281A (NPN) MJL1302A (PNP)Complementary BipolarPower TransistorsFeatureshttp://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A15 AMPERES Excellent Gain LinearityCOMPLEMENTARY High BVCEOSILICON POWER High FrequencyTRANSISTORS These Devices are Pb-Free and are RoHS Compliant*Benefits 260 VOLTS
mjl3281a.pdf
isc Silicon NPN Power Transistor MJL3281ADESCRIPTIONLow Harmonic DistortionHigh Safe Operation Area 1 A/100 V @ 1 secHigh f 30 MHz TYPTComplement to Type MJL1302AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applications.A
mjl3281ag.pdf
MJL3281A (NPN) MJL1302A (PNP)Preferred DevicesComplementary BipolarPower TransistorsFeatures Exceptional Safe Operating Area http://onsemi.com NPN/PNP Gain Matching within 10% from 50 mA to 5 A15 AMPERES Excellent Gain Linearity High BVCEOCOMPLEMENTARY High FrequencySILICON POWER Pb-Free Packages are AvailableTRANSISTORSBenefits260 VOLTS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
