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2N5560 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N5560

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 175 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO61

2N5560 Transistor Equivalent Substitute - Cross-Reference Search

2N5560 PDF doc:

5.1. 2n5564_2n5565_2n5566.pdf Size:89K _vishay

2N5560
2N5560

2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 to -3 -40 7.5 -3 10 2N5566 -0.5 to -3 -40 7.5 -3 20 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Sl

Datasheet: 2N5550 , 2N5551 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , BU508 , 2N557 , 2N5575 , 2N5576 , 2N5577 , 2N5578 , 2N5579 , 2N558 , 2N5580 .

 


2N5560
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2N5560
  2N5560
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