| |
MMBT5401L
Transistor Datasheet. Parameters and Characteristics. Type Designator: MMBT5401L
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.225
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.5
Maximum junction temperature (Tj), °C:
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: - Package of MMBT5401L
transistor: SOT23-3
MMBT5401L
Equivalent Transistors - Cross-Reference Search MMBT5401L
PDF document for downloads:
1.1. mmbt5401lt1-d.pdf  Size:115K _onsemi  |
 | MMBT5401LT1G
High Voltage Transistor
PNP Silicon
Features
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating Symbol Value Unit
1
Collector-Emitter Voltage VCEO -150 Vdc
BASE
Collector-Base Voltage VCBO -160 Vdc
2
Emitter-Base Voltage VEBO -5.0 Vdc
EMITTER
Collector Current - Continuous IC -500 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
MARKING
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the DIAGRAM
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
2L M G
SOT-23 (TO-236)
Characteristic Symbol Max Unit G
CASE 318
1
Total Device Dissipation PD 225 mW
STYLE 6
FR-5 Board (Note 1)
TA = 25°C
Derate Above 25°C 1.8 mW/°C 2L = Specific Device Code
M = Date Code*
Thermal Resistance, RqJA 556 °C/W
G = Pb-Free Package
J |
2.1. mmbt5401.pdf Size:189K _motorola  |
 | MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MMBT5401LT1/D
High Voltage Transistor
MMBT5401LT1
COLLECTOR
PNP Silicon
3
Motorola Preferred Device
1
BASE
2
3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol Value Unit
2
Collector–Emitter Voltage VCEO –150 Vdc
CASE 318–08, STYLE 6
Collector–Base Voltage VCBO –160 Vdc
SOT–23 (TO–236AB)
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1) PD 225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RqJA 556 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate,(2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
MMBT5401LT1 = 2L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARA |
2.2. mmbt5401.pdf Size:67K _fairchild_semi  |
 | MMBT5401
PNP General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch for
C
applications requiring high voltage.
E
B
SOT-23
Mark: 2L
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage -150 V
VCBO Collector-Base Voltage -160 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current - Continuous -600 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BVCEO Collec |
2.3. 2n5401_mmbt5401.pdf Size:75K _fairchild_semi  |
 | 2N5401 MMBT5401
C
E
C TO-92
B
B SOT-23
E
Mark: 2L
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 150 V
VCBO Collector-Base Voltage 160 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 600 mA
-55 to +150
TJ, Tstg Operating and Storage Junction Temperature Range °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characterist |
2.4. mmbt5401.pdf Size:121K _diodes  |
 | MMBT5401
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features Mechanical Data
• Epitaxial Planar Die Construction • Case: SOT-23
• Complementary NPN Type Available (MMBT5551) • Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Ideal for Low Power Amplification and Switching
• Moisture Sensitivity: Level 1 per J-STD-020D
• Lead, Halogen and Antimony Free, RoHS Compliant
• Terminal Connections: See Diagram
• "Green" Device (Notes 2 and 3)
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
B E
Top View Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitte |
2.5. mmbt5401_2.pdf Size:162K _mcc  |
 | MCC
Micro Commercial Components
TM
MMBT5401
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP Plastic
• Collector Current: ICM=0.6A
Encapsulate
• Collector-Base Voltage: V(BR)CBO=160V
• Operating And Storage Temperatures –55OC to 150OC
Transistor
• Capable of 0.3Watts of Power Dissipation
• Marking: 2L
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
SOT-23
• Epoxy meets UL 94 V-0 flammability rating
A
• Moisure Sensitivity Level 1
D
O
C
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol Parameter Min Max Units
B
C
OFF CHARACTERISTICS
V(BR)CEO Collector -Emitter Breakdown Voltage 150 --- Vdc
B E
(IC=1.0mAdc, IB=0)
F E
V(BR)CBO Collector-Base Breakdown Voltage 160 --- Vdc
(IC=100uAdc, IE=0)
V(BR)EBO Emitter-Base Breakdown Voltage 5.0 --- Vdc
(IE=10uAdc, IC=0)
GH
J
ICBO Collector Cutoff Current --- 0 |
2.6. mmbt5401.pdf Size:111K _secos  |
 | MMBT5401
PNP Silicon
General PurposeTransistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
L
Ideal for medium power amplification and switching 3
3
Top View C B
1
1 2
MARKING
2
K E
2L
D
H J
F G
ABSOLUTE MAXIMUM RATINGS
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
Parameter Symbol Ratings Unit
A 2.80 3.00 G 0.10 REF.
Collector to Emitter Voltage VCEO -150 V
B 2.25 2.55 H 0.55 REF.
C 1.20 1.40 J 0.08 0.15
Collector to Base Voltage VCBO -160 V
D 0.90 1.15 K 0.5 REF.
Emitter to Base Voltage VEBO -5.0 V
E 1.80 2.00 L 0.95 TYP.
F 0.30 0.50
Collector Current - Continuous IC -500 mA
THERMAL CHARACTERISTICS
Parameter Symbol Ratings Unit
TA = 25°C 225 mW
Total Power Dissipation PD
Derate above 25°C 1.8 mW / ?
Thermal Resistance, Junction to Ambient R?JA 556 ? / W
Alumina Substrate,(2) TA = 25°C 300 mW
Total Power Dissipation PD
Derate above 25°C 2.4 |
2.7. mmbt5401w.pdf Size:226K _secos  |
 | MMBT5401W
PNP Silicon
Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-323
A suffix of “-C” specifies halogen & lead-free
FEATURE
A
L
Ideal for Medium Power Amplification and Switching
3
3
Also Available in Lead Free Version
Top View C B
Complementary to MMBT5551W 1
1 2
2
K E
Collector
3
D
H J
F G
MARKING: K4M
1
Millimeter Millimeter
REF. REF.
Base Min. Max. Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
2
C 1.15 1.35 J 0.08 0.25
Emitter
D 0.80 1.10 K - -
E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO -160 V
Collector to Emitter Voltage VCEO -150 V
Emitter to Base Voltage VEBO -5 V
Collector Current-Continuous IC -200 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance, Junction to Ambient R?JA 625 °C/W
Opterating & Storage Temperature T |
2.8. mmbt5401.pdf Size:373K _htsemi  |
 | MMBT5401
TRANSISTOR(PNP)
SOT-23
1. BASE
FEATURES
2. EMITTER
Complementary to MMBT5551
3. COLLECTOR
Ideal for medium power amplification and switching
-
MARKING: 2L
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO -160 V
IC= -100?A, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO -5 V
IE= -10?A, IC=0
Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1
?A
Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1
?A
hFE1 VCE= -5V, IC= -1mA 80
DC curre |
2.9. mmbt5401.pdf Size:295K _gsme  |
 | ? ? ? ? ? ? ? ? ? ? ? ? ?
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
GM5401
MAXIMUM RATINGS
¦MAXIMUM RATINGS ?????
MAXIMUM RATINGS
Characteristic Symbol Rating Unit
???? ?? ??? ??
Collector-Emitter Voltage
VCEO -150 Vdc
???-?????
Collector-Base Voltage
VCBO -160 Vdc
???-????
Emitter-Base Voltage
VEBO -5.0 Vdc
???-????
Collector Current—Continuous
Ic -500 mAdc
?????-??
THERMAL CHARACTERISTICS
¦THERMAL CHARACTERISTICS ???
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
???? ?? ??? ??
PD
Total Device Dissipation ?????
225 mW
FR-5 Board(1)
TA=25????? 25?
1.8 mW/?
Derate above25? ?? 25???
Thermal Resistance Junction to Ambient
R
?JA 556 ?/W
??
PD
Total Device Dissipation ????? 300 mW
Alumina Substrate ?????(2) TA=25?
Derate above25? ?? 25??? 2.4 mW/?
Thermal Resistance Junction to Ambient
R
?JA 417 ?/W
??
Junction and Storage Temperature
TJ,Tstg 150?, -55 |
2.10. mmbt5401.pdf Size:194K _lge  |
 | MMBT5401
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Complementary to MMBT5551
Ideal for medium power amplification and switching
MARKING: 2L
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO -160 V
IC= -100?A, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO -5 V
IE= -10?A, IC=0
Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1
?A
Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1
?A
|
2.11. mmbt5401.pdf Size:497K _wietron  |
 | MMBT5401
High Voltage PNP Transistors
COLLECTOR
3
3
1
1
BASE
2
2
SOT-23
EMITTER
WEITRON
http://www.weitron.com.tw
MMBT5401
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
-
50
(IC=-1.0mAdc, VCE=-5.0Vdc)
hFE
-
60 240
(IC=-10mAdc, VCE=-5.0Vdc)
50
-
(IC=-50mAdc, VCE=-5.0Vdc)
Collector-Emitter Saturation Voltage
VCE(sat)
-0.2
Vdc
(IC=-10mAdc, IB=-1.0mAdc)
-
-0.5
(IC=-50mAdc, IB=-5.0mAdc)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc) VBE(sat)
- -1.0
Vdc
(IC=-50mAdc, IB=-5.0mAdc) -1.0
SMALL-SIGNAL CHARACTERISTICS
Collector-Gain-Bandwidth Product
fT
MHz
100 300
( -10 VCE=-10Vdc, f=100MHz)
IC mVdc,
Output Capacitance
Cobo PF
6.0
(
VCB -10 IE=0, f=1.0MHz)
V
dc,
Small Signal Current Gain
200
40
h
fe
( -1.0 V
IC mVdc,
CE=-10Vdc, f=1.0kHz)
Noise Figure
dB
8.0
NF
V
( -200 dc,
IC uA
CE=-5.0Vdc, Rs=10 , f=1.0kHz) |
See also transistors datasheet: MMBT4401WT1
, MMBT4403L
, MMBT4403M3T5G
, MMBT4403W
, MMBT489
, MMBT5087L
, MMBT5088L
, MMBT5089L
, 2N2219
, MMBT5550L
, MMBT5551L
, MMBT5551M3T5G
, MMBT589L
, MMBT6427L
, MMBT6428L
, MMBT6429L
, MMBT6517L
. Keywords| MMBT5401L
Datasheet | MMBT5401L
Datenblatt | MMBT5401L
RoHS | MMBT5401L
Distributor | | MMBT5401L
Application Notes | MMBT5401L
Component | MMBT5401L
Circuit | MMBT5401L
Schematic | | MMBT5401L
Equivalent | MMBT5401L
Cross Reference | MMBT5401L
Data Sheet | MMBT5401L
Fiche Technique |
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