MMBTA63L Transistor Datasheet. Parameters and Characteristics.

Type Designator: MMBTA63L

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 125

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10000

Noise Figure, dB: -

Package of MMBTA63L transistor: SOT23-3

MMBTA63L Equivalent Transistors - Cross-Reference Search

MMBTA63L PDF document for downloads:

1.1. mmbta63l_mmbta64.pdf Size:156K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA63LT1/D Darlington Transistors MMBTA63LT1 PNP Silicon COLLECTOR 3 MMBTA64LT1 * *Motorola Preferred Device BASE 1 EMITTER 2 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector–Emitter Voltage VCES –30 Vdc Collector–Base Voltage VCBO –30 Vdc CASE 318–08, STYLE 6 Emitter–Base Voltage VEBO –10 Vdc SOT–23 (TO–236AB) Collector Current — Continuous IC –500 mAdc DEVICE MARKING MMBTA63LT1 = 2U; MMBTA64LT1 = 2V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board,(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbo

3.1. mmbta63.pdf Size:39K _fairchild_semi

MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 C B SOT-23 B SOT-223 E Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max U

3.2. mmbta63_mmbta64.pdf Size:35K _kec

SEMICONDUCTOR MMBTA63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 Collector-Base VCBO -30 V MMBTA63/64 K 0.00 ~ 0.10 Voltage L 0.55 P P M 0.20 MIN Collector-Emitter N 1.00+0.20/-0.10 VCES -30 V MMBTA63/64 P 7 Voltage M VEBO -10 V Emitter-Base Voltage IC -500 mA DC 1. EMITTER Collector Current ICP Pulse -1 A 2. BASE 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V(BR)CES IC=-0.1mA, IB=0 Collector-Emitter Breakdown Voltage -30 - - V ICBO VCB=-30V, IE=0 Co

See also transistors datasheet: MMBTA06L , MMBTA06WT1 , MMBTA13L , MMBTA14L , MMBTA42L , MMBTA55L , MMBTA56L , MMBTA56W , 2N5401 , MMBTA64L , MMBTA70L , MMBTA92L , MMBTH10L , MMBTH10M3T5G , MMJT350T1 , MMUN2111L , MMUN2112L .

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