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MMUN2211L Transistor Datasheet. Parameters and Characteristics.

Type Designator: MMUN2211L

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 0

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of MMUN2211L transistor: SOT23-3

MMUN2211L Equivalent Transistors - Cross-Reference Search

MMUN2211L PDF doc:

1.1. mmun2211lt1-d.pdf Size:171K _onsemi

MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter PIN 3 resistor. The BRT eliminates these individual components by COLLECTOR integrating them into a single device. The use of a BRT can reduce R1 (OUTPUT) both system cost and board space. The device is housed in the PIN 1 R2 SOT-23 package which is designed for low power surface mount BASE PIN 2 applications. (INPUT) EMITTER (GROUND) Features • Simplifies Circuit Design MARKING DIAGRAM • Reduces Board Space and Component Count • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant A8x M G SOT-23 G CASE 318 MAXIMUM RATI

2.1. mmun2211.pdf Size:441K _wietron

MMUN2211 Series COLLECTOR 3 Bias Resistor Transistor 3 BASE R1 NPN Silicon 1 R2 1 2 P b Lead(Pb)-Free 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit 50 Vdc Collector-Emitter Voltage VCEO Collector-Base Voltage 50 Vdc VCBO Collector Current-Continuous I 100 mAdc C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation FR-5 Board (1) PD mW 246 T = 25°C A 1.6 mW / °C Derate above 25°C R 625 Thermal Resistance, Junction to Ambient (1) °C/W JA ? Junction and Storage,Temperature TJ,Tstg -65 to +150 °C 1. FR-4 @ minimun pad Device Marking and Resistor Values Device Marking R1(k) R2(k) Device Marking R1(k) R2(k) MMUN2211 A8A, 24 10 10 MMUN2232 A8J 4.7 4.7 MMUN2212 A8B 22 22 MMUN2233 A8K 4.7 47 MMUN2213 A8C, 26 47 47 MMUN2234 A8L 22 47 MMUN2214 A8D 10 47 MMUN2235 A8M 2.2 47 ? MMUN2238 A8R 2.2 ? MMUN2215 A8E 10 ? MMUN2216 A8F 4.7 MMUN2241 A8U 100 ? MMUN2230 A8G 1.0 1.0 MMUN2231 A8H 2.2 2.2 WEITRON

4.1. mmun22xx_a8a-b-c-d-e-f-h-j-k-lsot23.pdf Size:124K _onsemi

MMUN2211LT1 Series Preferred Device Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network PIN 3 consisting of two resistors; a series base resistor and a base-emitter COLLECTOR resistor. The BRT eliminates these individual components by (OUTPUT) integrating them into a single device. The use of a BRT can reduce R1 both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. PIN 1 R2 BASE (INPUT) • Simplifies Circuit Design PIN 2 • Reduces Board Space EMITTER • Reduces Component Count (GROUND) • The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during so

See also transistors datasheet: MMUN2112L , MMUN2113L , MMUN2114L , MMUN2115L , MMUN2116L , MMUN2132L , MMUN2133L , MMUN2134L , AD162 , MMUN2212L , MMUN2213L , MMUN2214L , MMUN2215L , MMUN2216L , MMUN2231L , MMUN2232L , MMUN2233L .

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