MUN5333DW1 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MUN5333DW1

Material of transistor: Si

Polarity: Complementary

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 0

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of MUN5333DW1 transistor: SC-88-6_SC-70-6_SOT-363-6

MUN5333DW1 Equivalent Transistors - Cross-Reference Search

MUN5333DW1 PDF document for downloads:

5.1. mun5311d.pdf Size:308K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5311DW1T1/D MUN5311DW1T1 Dual Bias Resistor Transistors SERIES NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base�emitter resistor. These digital transistors are designed to replace a single 6 5 device and its external resistor bias network. The BRT eliminates these 4 individual components by integrating them into a single device. In the 1 MUN5311DW1T1 series, two complementary BRT devices are housed in the 2 3 SOT�363 package which is ideal for low power surface mount applications CASE 419B�01, STYLE 1 where board space is at a premium. SOT�363 � Simplifies Circuit Design � Reduces Board Space (3) (2) (1) � Reduces Component Count � Available in 8 mm, 7 inch/3000 Unit Tape and R

5.2. mun5311dw1t1rev5.pdf Size:308K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5311DW1T1/D MUN5311DW1T1 Dual Bias Resistor Transistors SERIES NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base�emitter resistor. These digital transistors are designed to replace a single 6 5 device and its external resistor bias network. The BRT eliminates these 4 individual components by integrating them into a single device. In the 1 MUN5311DW1T1 series, two complementary BRT devices are housed in the 2 3 SOT�363 package which is ideal for low power surface mount applications CASE 419B�01, STYLE 1 where board space is at a premium. SOT�363 � Simplifies Circuit Design � Reduces Board Space (3) (2) (1) � Reduces Component Count � Available in 8 mm, 7 inch/3000 Unit Tape and R

5.3. mun53xxdw_11-16_30-35_sot363.pdf Size:243K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5311DW1T1/D MUN5311DW1T1 Dual Bias Resistor Transistors SERIES NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base�emitter resistor. These digital transistors are designed to replace a single 6 5 device and its external resistor bias network. The BRT eliminates these 4 individual components by integrating them into a single device. In the 1 MUN5311DW1T1 series, two complementary BRT devices are housed in the 2 3 SOT�363 package which is ideal for low power surface mount applications CASE 419B�01, STYLE 1 where board space is at a premium. SOT�363 � Simplifies Circuit Design � Reduces Board Space (3) (2) (1) � Reduces Component Count � Available in 8 mm, 7 inch/3000 Unit Tape and R

5.4. mun5311dw1t1-d.pdf Size:824K _onsemi

MUN5311DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com http://onsemi.com The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are (3) (2) (1) designed to replace a single device and its external resistor bias R1 R2 network. The BRT eliminates these individual components by Q1 integrating them into a single device. In the MUN5311DW1T1G series, two complementary BRT devices are Q2 housed in the SOT-363 package which is ideal for low power surface R2 R1 mount applications where board space is at a premium. Features (4) (5) (6) � Simplifies Circuit Design � Reduces Board Space 6 � Reduces Component Count 1 � Available in 8 mm, 7 inch/3000 Unit Tape and Reel � These Devices are Pb-Free, Halogen Free/

5.5. smun5311dw_series.pdf Size:327K _secos

SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. DESCRIPTION SOT-363 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its A external resistor bias network. The BRT eliminates these individual components by E L integrating them into a single device. In the SMUN5311DW series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. B FEATURE Simplifies circuit design F C H Reduces board space J D G K Reduces component count Available in 8 mm, 7 inch/3000 unit tape and reel The devices are Pb-Free 6 5 Millimeter Millimeter 4 REF. REF.

5.6. mun5311dw.pdf Size:1456K _wietron

MUN5311DW Series 6 5 4 6 Dual Bias Resistor Transistor 5 4 R 1 R 2 Q 2 NPN+PNP Silicon 1 2 3 R Q 2 1 P b Lead(Pb)-Free R 1 SOT-363(SC-88) 1 2 3 ( T =25?C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted) Maximum Ratings A Value Rating Symbol Unit Collector-Emitter Voltage Vdc VCEO 50 Collector-Base Voltage VCBO Vdc 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Characteristics(One Junction Heated) Symbol Max Unit 187(1) Total Device Dissipation PD mW 256(2) TA=25?C 1.5(1) Derate above 25?C mW/?C 2.0(2) 670(1) R?JA Thermal Resistance, Junction to Ambient ?C/W 490(2) Characteristics(Both Junctions Heated) Symbol Max Unit 250(1) PD Total Device Dissipation mW 385(2) TA=25?C 2.0(1) Derate above 25?C mW/ C 3.0(2) 493(1) R?JA ?C/W Thermal Resistance, Junction to Ambient 325(2) 188(1) R?JL Thermal Resistance, Junction to Lead ?C/W 208(2) TJ,Tstg Junction and Storage, Temper

See also transistors datasheet: MUN5311DW1 , MUN5312DW1 , MUN5313DW1 , MUN5314DW1 , MUN5315DW1 , MUN5316DW1 , MUN5330DW1 , MUN5332DW1 , 2N5401 , MUN5334DW1 , MUN5335DW1 , NJD1718 , NJD2873 , NJD35N04 , NJL0281D , NJL0302D , NJL1302D .

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