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2N5590 Transistor (IC) Datasheet. Cross Reference Search. 2N5590 Equivalent

Type Designator: 2N5590

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 36

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 2

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF: 70

Forward current transfer ratio (hFE), min: 5

Noise Figure, dB: -

Package of 2N5590 transistor: TO128

2N5590 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5590 PDF:

5.1. 2n5597.pdf Size:11K _semelab

2N5590
2N5590

2N5597 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica

5.2. 2n5599.pdf Size:10K _semelab

2N5590
2N5590

2N5599 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica

5.3. 2n5598_2n5600_2n5602_2n5604.pdf Size:117K _jmnic

2N5590
2N5590

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outli

5.4. 2n5597_2n5599_2n5601_2n5603.pdf Size:120K _jmnic

2N5590
2N5590

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outli

5.5. 2n5598_2n5600_2n5602_2n5604.pdf Size:127K _inchange_semiconductor

2N5590
2N5590

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5598 2N5600 2N5602 2N5604 Fig.1 simplified out

5.6. 2n5597_2n5599_2n5601_2n5603.pdf Size:127K _inchange_semiconductor

2N5590
2N5590

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5597 2N5599 2N5601 2N5603 Fig.1 simplified out

See also transistors datasheet: 2N5582 , 2N5583 , 2N5583LP , 2N5584 , 2N5587 , 2N5588 , 2N5589 , 2N559 , 2N4403 , 2N5591 , 2N5595 , 2N5596 , 2N5597 , 2N5598 , 2N5599 , 2N56 , 2N560 .

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 2N5590 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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