All Transistors. 2N5590 Datasheet

 

2N5590 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N5590

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 175 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO128

2N5590 Transistor Equivalent Substitute - Cross-Reference Search

2N5590 PDF doc:

5.1. 2n5597.pdf Size:11K _semelab

2N5590
2N5590

2N5597 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica

5.2. 2n5599.pdf Size:10K _semelab

2N5590
2N5590

2N5599 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica

5.3. 2n5598_2n5600_2n5602_2n5604.pdf Size:117K _jmnic

2N5590
2N5590

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outli

5.4. 2n5597_2n5599_2n5601_2n5603.pdf Size:120K _jmnic

2N5590
2N5590

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outli

5.5. 2n5598_2n5600_2n5602_2n5604.pdf Size:127K _inchange_semiconductor

2N5590
2N5590

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5598 2N5600 2N5602 2N5604 Fig.1 simplified out

5.6. 2n5597_2n5599_2n5601_2n5603.pdf Size:127K _inchange_semiconductor

2N5590
2N5590

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5597 2N5599 2N5601 2N5603 Fig.1 simplified out

Datasheet: 2N5582 , 2N5583 , 2N5583LP , 2N5584 , 2N5587 , 2N5588 , 2N5589 , 2N559 , 2N4403 , 2N5591 , 2N5595 , 2N5596 , 2N5597 , 2N5598 , 2N5599 , 2N56 , 2N560 .

 


2N5590
  2N5590
  2N5590
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