NSS40300MD Transistor Datasheet. Parameters and Characteristics.

Type Designator: NSS40300MD

Material of transistor: Si

Polarity: Dual_PNP

Maximum collector power dissipation (Pc), W: 0.576

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 220

Noise Figure, dB: -

Package of NSS40300MD transistor: SOIC-8

NSS40300MD Equivalent Transistors - Cross-Reference Search

NSS40300MD PDF document for downloads:

1.1. nss40300md.pdf Size:106K _onsemi

NSS40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.com voltage. 40 VOLTS Typical applications are current mirrors, differential amplifiers, DC-DC converters and power management in portable and battery 6.0 AMPS powered products such as cellular and cordless phones, PDAs, PNP LOW VCE(sat) TRANSISTOR computers, printers, digital cameras and MP3 players. Other EQUIVALENT RDS(on) 80 mW applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can COLLECTOR COLLECTOR be used in air bag deployment and in the instrument cluster. The high 7,8 5,6 current gain allows e2PowerEdge devices to be driven

1.2. nss40300mz4.pdf Size:109K _onsemi

NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http://onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where PNP TRANSISTOR affordable efficient energy control is important. Typical applications are DC-DC converters and power management 3.0 AMPERES in portable and battery powered products such as cellular and cordless 40 VOLTS, 2.0 WATTS phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive C 2,4 industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Lin

2.1. nss40300d.pdf Size:104K _onsemi

NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http://onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. 40 VOLTS Typical applications are low voltage motor controls in mass storage 6.0 AMPS products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument PNP LOW VCE(sat) TRANSISTOR cluster. The high current gain allows e2PowerEdge devices to be EQUIVALENT RDS(on) 80 mW driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. COLLECTOR COLLECTOR 7,8 5,6 Features • Halide Free 2 4 • This is a Pb-Free Device BASE BASE 1 3 MAXIMUM RATINGS (TA = 25°C) EMIT

See also transistors datasheet: NSS30201MR6T1G , NSS35200CF8T1G , NSS35200MR6T1G , NSS40200L , NSS40200UW6T1G , NSS40201L , NSS40300 , NSS40300DD , 2SC945 , NSS40301 , NSS40301MD , NSS40302PD , NSS40500UW3 , NSS40501UW3 , NSS40600CF8 , NSS40601CF8 , NSS60200LT1G .

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