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NST45011MW6T1G
Transistor Datasheet. Parameters and Characteristics. Type Designator: NST45011MW6T1G
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.38
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.1
Maximum junction temperature (Tj), °C:
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 200
Noise Figure, dB: - Package of NST45011MW6T1G
transistor: SC-88-6_SC-70-6_SOT-363-6
NST45011MW6T1G
Equivalent Transistors - Cross-Reference Search NST45011MW6T1G
PDF doc:
1.1. nst45011mw6-d.pdf Size:148K _onsemi |
| NST45011MW6T1G
Dual Matched General
Purpose Transistor
NPN Matched Pair
These transistors are housed in an ultra-small SOT-363 package
http://onsemi.com
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. (3) (2) (1)
Features
• Current Gain Matching to 10%
Q1 Q2
• Base-Emitter Voltage Matched to 2 mV
• Drop-In Replacement for Standard Device
(4) (5) (6)
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
6
Rating Symbol Value Unit
1
Collector-Emitter Voltage VCEO 45 V
SOT-363
Collector-Base Voltage VCBO 50 V
CASE 419B
Emitter-Base Voltage VEBO 6.0 V
STYLE 1
Collector Current - Continuous IC 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
MARKING DIAGRAMS
Ratings are stress ra |
3.1. nst45010mw6-d.pdf Size:149K _onsemi |
| NST45010MW6T1G
Dual Matched General
Purpose Transistor
PNP Matched Pair
These transistors are housed in an ultra-small SOT-363 package
http://onsemi.com
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
(3) (2) (1)
Complementary NPN equivalent NST45011MW6T1G is available.
Features
Q1 Q2
• Current Gain Matching to 10%
• Base-Emitter Voltage Matched to ? 2 mV
• Drop-In Replacement for Standard Device (4) (5) (6)
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
6
MAXIMUM RATINGS
1
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
SOT-363
CASE 419B
Collector-Base Voltage VCBO -50 V
STYLE 1
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -100 mAdc
MARKING DIAGRAMS
Stresses exceeding Maxi |
See also transistors datasheet: NST3904DXV6
, NST3904F3T5G
, NST3906DP6
, NST3906DXV6
, NST3906F3T5G
, NST3946DP6
, NST3946DXV6
, NST45010
, BC108
, NST489
, NST846BF3T5G
, NST847BDP6
, NST847BF3T5G
, NST847BPDP6T5G
, NST848BF3T5G
, NST856BF3T5G
, NST857BDP6
. Keywords| NST45011MW6T1G
Datasheet | NST45011MW6T1G
Datenblatt | NST45011MW6T1G
RoHS | NST45011MW6T1G
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Application Notes | NST45011MW6T1G
Component | NST45011MW6T1G
Circuit | NST45011MW6T1G
Schematic | | NST45011MW6T1G
Equivalent | NST45011MW6T1G
Cross Reference | NST45011MW6T1G
Data Sheet | NST45011MW6T1G
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