NST848BF3T5G Transistor Datasheet. Parameters and Characteristics.

Type Designator: NST848BF3T5G

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.347

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of NST848BF3T5G transistor: SOT-1123-3

NST848BF3T5G Equivalent Transistors - Cross-Reference Search

NST848BF3T5G PDF document for downloads:

1.1. nst848bf3.pdf Size:108K _onsemi

NST848BF3T5G NPN General Purpose Transistor The NST848BF3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 http://onsemi.com surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 • hFE, 200-450 • Low VCE(sat), ? 0.25 V 1 BASE • Reduces Board Space • This is a Halide-Free Device 2 • This is a Pb-Free Device EMITTER NST848BF3T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc 3 Collector-Base Voltage VCBO 30 Vdc 2 1 1 Emitter-Base Voltage VEBO 5.0 Vdc SOT-1123 Collector Current - Continuous IC 100 mAdc CASE 524AA STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C PD 290 mW MARKING DIAGRAM Derate above 25°C (Note 1) 2.3 mW/°C Thermal Resistance, RqJA 432 °C/W Y M Ju

5.1. nst847bf3.pdf Size:89K _onsemi

NST847BF3T5G NPN General Purpose Transistor The NST847BF3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in http://onsemi.com the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a COLLECTOR premium. 3 Features • hFE, 200-450 1 BASE • Low VCE(sat), ? 0.25 V • Reduces Board Space 2 • This is a Pb-Free Device EMITTER NST847BF3T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 Vdc 3 Collector-Base Voltage VCBO 50 Vdc 2 1 1 Emitter-Base Voltage VEBO 6.0 Vdc SOT-1123 Collector Current - Continuous IC 100 mAdc CASE 524AA THERMAL CHARACTERISTICS STYLE 1 Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C PD 290 mW MARKING DIAGRAM Derate above 25°C (Note 1) 2.3 mW/°C Thermal Resistance, RqJA 432 °C/W 4 M Junction-to-Ambient (Note

5.2. nst847bpdp6.pdf Size:101K _onsemi

NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in http://onsemi.com one package, this device is ideal for low-power surface mount applications where board space is at a premium. Features (3) (2) (1) • hFE, 200-450 • Low VCE(sat), ? 0.3 V Q1 Q2 • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count (4) (5) (6) • This is a Pb-Free Device NST847BPDP6T5G* MAXIMUM RATINGS *Q1 PNP Q2 NPN Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 Vdc 4 Collector-Base Voltage VCBO 50 Vdc 5 6 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc 3 2 1 Electrostatic Discharge HBM ESD 2 SOT-963 MM Class B CASE 527AD THERMAL CHARACTERISTICS PLASTIC Character

5.3. nst846bf3-d.pdf Size:109K _onsemi

NST846BF3T5G NPN General Purpose Transistor The NST846BF3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 http://onsemi.com surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 • hFE, 200-450 • Low VCE(sat), ? 0.25 V 1 BASE • Reduces Board Space • This is a Halide-Free Device 2 • This is a Pb-Free Device EMITTER NST846BF3T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 65 Vdc 3 Collector-Base Voltage VCBO 80 Vdc 2 1 1 Emitter-Base Voltage VEBO 6.0 Vdc SOT-1123 Collector Current - Continuous IC 100 mAdc CASE 524AA STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C PD 290 mW MARKING DIAGRAM Derate above 25°C (Note 1) 2.3 mW/°C Thermal Resistance, RqJA 432 °C/W V M Ju

5.4. nst847bdp6.pdf Size:93K _onsemi

NST847BDP6T5G Dual General Purpose Transistor The NST847BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http://onsemi.com applications where board space is at a premium. Features (3) (2) (1) • hFE, 200-450 • Low VCE(sat), ? 0.25 V • Simplifies Circuit Design Q1 Q2 • Reduces Board Space • Reduces Component Count (4) (5) (6) • This is a Pb-Free Device NST847BDP6T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 Vdc 4 5 6 Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 6.0 Vdc 3 2 1 1 Collector Current - Continuous IC 100 mAdc SOT-963 Electrostatic Discharge HBM ESD 2 CASE 527AD MM Class B PLASTIC THERMAL CHARACTERISTICS Characteristic (Single Heated) Symbol

See also transistors datasheet: NST3946DXV6 , NST45010 , NST45011MW6T1G , NST489 , NST846BF3T5G , NST847BDP6 , NST847BF3T5G , NST847BPDP6T5G , 2N3053 , NST856BF3T5G , NST857BDP6 , NST857BF3T5G , NSTB1002 , NSTB1005 , P2N2222A , PCP1103 , PCP1203 .

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