NST857BF3T5G Transistor Datasheet. Parameters and Characteristics.

Type Designator: NST857BF3T5G

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 220

Noise Figure, dB: -

Package of NST857BF3T5G transistor: SOT-1123-3

NST857BF3T5G Equivalent Transistors - Cross-Reference Search

NST857BF3T5G PDF document for downloads:

1.1. nst857bf3.pdf Size:90K _onsemi

NST857BF3T5G PNP General Purpose Transistor The NST857BF3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in http://onsemi.com the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR 3 Features • hFE, 220-475 1 • Low VCE(sat), ? -0.3 V BASE • Reduces Board Space • This is a Pb-Free Device 2 EMITTER NST857BF3T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc 3 Collector-Base Voltage VCBO -50 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc 1 1 Collector Current - Continuous IC -100 mAdc SOT-1123 CASE 524AA THERMAL CHARACTERISTICS STYLE 1 Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C PD 290 mW MARKING DIAGRAM Derate above 25°C (Note 1) 2.3 mW/°C Thermal Resistance, RqJA 432 °C/W 5 M Junction-to-Ambient (N

3.1. nst857bdp6.pdf Size:93K _onsemi

NST857BDP6T5G Dual General Purpose Transistor The NST857BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http://onsemi.com applications where board space is at a premium. Features (3) (2) (1) • hFE, 220-475 • Low VCE(sat), ? 0.3 V • Simplifies Circuit Design Q1 Q2 • Reduces Board Space • Reduces Component Count (4) (5) (6) • This is a Pb-Free Device NST857BDP6T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc 4 Collector-Base Voltage VCBO -50 Vdc 5 6 Emitter-Base Voltage VEBO -6.0 Vdc 3 Collector Current - Continuous IC -100 mAdc 2 1 1 Electrostatic Discharge HBM ESD 2 SOT-963 MM Class B CASE 527AD PLASTIC THERMAL CHARACTERISTICS Characteristic (Single Heated) Sym

5.1. nst856bf3-d.pdf Size:110K _onsemi

NST856BF3T5G PNP General Purpose Transistor The NST856BF3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in http://onsemi.com the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR 3 Features • hFE, 220-475 1 • Low VCE(sat), ? -0.3 V BASE • Reduces Board Space • This is a Halide-Free Device 2 EMITTER • This is a Pb-Free Device NST856BF3T5G MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector-Emitter Voltage VCEO -65 Vdc 2 Collector-Base Voltage VCBO -80 Vdc 1 1 Emitter-Base Voltage VEBO -5.0 Vdc SOT-1123 CASE 524AA Collector Current - Continuous IC -100 mAdc STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation, TA = 25°C PD 290 mW Derate above 25°C (Note 1) 2.3 mW/°C A M Thermal Resistance, RqJA

See also transistors datasheet: NST489 , NST846BF3T5G , NST847BDP6 , NST847BF3T5G , NST847BPDP6T5G , NST848BF3T5G , NST856BF3T5G , NST857BDP6 , BC546 , NSTB1002 , NSTB1005 , P2N2222A , PCP1103 , PCP1203 , PZ3904 , PZT651 , PZT751 .

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