BC807DS Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC807DS

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of BC807DS transistor: SOT457

BC807DS Equivalent Transistors - Cross-Reference Search

BC807DS PDF document for downloads:

1.1. bc807ds.pdf Size:123K _philips

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC807DS PNP general purpose double transistor Product data sheet 2002 Nov 22 Supersedes data of 2002 Aug 09 NXP Semiconductors Product data sheet PNP general purpose double transistor BC807DS FEATURES QUICK REFERENCE DATA � High current (500 mA) SYMBOL PARAMETER MAX. UNIT � 600 mW total power dissipation VCEO collector-emitter voltage -45 V � Replaces two SOT23 packaged transistors on same IC collector current (DC) -500 mA PCB area. ICM peak collector current -1 A APPLICATIONS PINNING � General purpose switching and amplification PIN DESCRIPTION � Push-pull amplifiers 1, 4 emitter TR1; TR2 � Multi-phase stepper motor drivers. 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 DESCRIPTION PNP transistor pair in a SOT457 (SC-74) plastic package. 6 5 4 6 5 4 MARKING TR2 TYPE NUMBER MARKING CODE TR1 BC807DS N2 1 2 3 1 2 3 Top view MAM457 Fig.1 Simplified outline (SOT457) and symbol. LIMITING VAL

5.1. bc807-16_bc807–25_bc807–40.pdf Size:90K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC807�16LT1/D BC807-16LT1 General Purpose Transistors PNP Silicon BC807-25LT1 COLLECTOR 3 BC807-40LT1 2 BASE 1 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector�Emitter Voltage VCEO �45 V Collector�Base Voltage VCBO �50 V CASE 318�08, STYLE 6 SOT�23 (TO�236AB) Emitter�Base Voltage VEBO �5.0 V Collector Current � Continuous IC �500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR�5 Board, (1) PD TA = 25�C 225 mW Derate above 25�C 1.8 mW/�C Thermal Resistance, Junction to Ambient RqJA 556 �C/W Total Device Dissipation PD Alumina Substrate, (2) TA = 25�C 300 mW Derate above 25�C 2.4 mW/�C Thermal Resistance, Junction to Ambient RqJA 417 �C/W Junction and Storage Temperature TJ, Tstg �55 to +150 �C DEVICE MARKING BC807�16LT1 = 5A; BC807�25LT1 = 5B; BC807�40LT1 = 5C ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted.) Characteris

5.2. bc807_bc807w_bc327.pdf Size:233K _philips

BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 � 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337 [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base; - - -45 V IC =10mA IC collector current (DC) - - -500 mA ICM peak collector current - - -1 A [1] hFE DC current gain IC = -100 mA; VCE = -1V BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 [1] Pulse test:

5.3. bc807w_3.pdf Size:53K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose transistor 1999 May 18 Product specification Supersedes data of 1997 Jun 09 Philips Semiconductors Product specification PNP general purpose transistor BC807W FEATURES PINNING � High current (max. 500 mA) PIN DESCRIPTION � Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector � General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage PNP transistor in a SOT323 plastic package. NPN complement: BC817W. 3 MARKING 1 TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 BC807W 5D? BC807-25W 5B? 2 Top view BC807-16W 5A? BC807-40W 5C? MAM048 Note Fig.1 Simplified outline (SOT323) and symbol. 1. ? = - : Made in Hong Kong. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collect

5.4. bc807_3.pdf Size:52K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC807 PNP general purpose transistor 1999 Apr 08 Product specification Supersedes data of 1997 Feb 28 Philips Semiconductors Product specification PNP general purpose transistor BC807 FEATURES PINNING � High current (max. 500 mA) PIN DESCRIPTION � Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector � General purpose switching and amplification. DESCRIPTION handbook, halfpage 3 3 PNP transistor in a SOT23 plastic package. NPN complements: BC817. 1 MARKING 2 (1) 1 2 TYPE NUMBER MARKING CODE BC807 5D? Top view MAM256 BC807-16 5A? BC807-25 5B? Fig.1 Simplified outline (SOT23) and symbol. BC807-40 5C? Note 1. ? = p: Made in Hong Kong. ? = t: Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base; IC = -1

5.5. bc807-25_bc807-40.pdf Size:61K _st

BC807-25 BC807-40 � SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE BC817-25 AND BC817-40 RESPECTIVELY SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -50 V V Collector-Emitter Voltage (I = 0) -45 V CEO B VEBO Emitter-Base Voltage (IC = 0) -5 V I Collector Current -0.5 A C ICM Collector Peak Current -1 A Ptot Total Dissipation at TC = 25 oC 250 mW o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 September 2002 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BC807-25 / BC807-40

5.6. bc807_bc808.pdf Size:72K _fairchild_semi

BC807/BC808 Switching and Amplifier Applications � Suitable for AF-Driver stages and low power output stages 3 � Complement to BC817/BC818 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC807 -50 V : BC808 -30 V VCEO Collector-Emitter Voltage : BC807 -45 V : BC808 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation -310 mW TJ Junction Temperature 150 �C TSTG Storage Temperature -65 ~ 150 �C Electrical Characteristics Ta=25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 : BC807 -45 V : BC808 -25 V BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0 : BC807 -50 V : BC808 -30 V BVEBO Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 V ICES Collector Cut-off Curre

5.7. bc807_bc808.pdf Size:73K _samsung

BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 � Sutable for AF-Driver stages and low power output stages � Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage :BC807 VCES -50 V :BC808 -30 V Collector Emitter Voltage :BC807 VCEO -45 V :BC808 -25 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -800 mA Collector Dissipation PC -310 mW Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit BVCEO IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage -45 V :BC807 -25 V :BC808 BVCES IC= -0.1mA, IB=0 Collector-Emitter Breakdown Voltage :BC807 -50 V V :BC808 -30 V Emitter-Base Breakdown Voltage BVEBO IE= -0.1mA, IC=0 -5 nA Collector Cut-off Current ICES VCE= -25V, IB=0 -100 nA Emitter Cut-off Current I

5.8. bc807-16w.pdf Size:91K _siemens

BC 807-16W PNP Silicon AF Transistor � For general AF applications � High collector current � High current gain � Low collector-emitter saturation voltage � Complementary types: BC817W, BC818W (NPN) Type Marking Ordering Code Pin Configuration Package BC 807-16W 5As Q62702-C2325 1 = B 2 = E 3 = C SOT-323 BC 807-25W 5Bs Q62702-C2326 1 = B 2 = E 3 = C SOT-323 BC 807-40W 5Cs Q62702-C2327 1 = B 2 = E 3 = C SOT-323 BC 808-16W 5Es Q62702-C2328 1 = B 2 = E 3 = C SOT-323 BC 808-25W 5Fs Q62702-C2329 1 = B 2 = E 3 = C SOT-323 BC 808-40W 5Gs Q62702-C2330 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO V BC 807 W 45 BC 808 W 25 Collector-base voltage VCBO BC 807 W 50 BC 808 W 30 Emitter-base voltage VEBO 5 DC collector current IC 500 mA Peak collector current ICM 1 A Base current IB 100 mA Total power dissipation, TS = 130�C Ptot 250 mW Junction temperature Tj 150 �C Storage temperature Tstg - 65 ... + 150 Thermal R

5.9. bc807_bc808.pdf Size:49K _diodes

SOT23 PNP SILICON PLANAR BC807 MEDIUM POWER TRANSISTORS BC808 ISSUE 4 � JUNE 1996 T I D T I 8 D 8 8 E 8 8 8 C 8 8 8 8 8 8 B T T 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T � i T T T � ELECTRICAL CHARACTERISTICS (at Tamb = 25�C unless otherwise stated). T I T IT DITI II I � V V I � V V I T � i I � V V I II i V V I I i V I i V V I V V T V I i I V V T i I V V I V V I V V I V V T i i I V V T II 8 I I V V i I i i I i � D I ? i i iI I i

5.10. bc807-16-25-40.pdf Size:114K _diodes

BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features � Ideally Suited for Automatic Insertion A SOT-23 � Epitaxial Planar Die Construction C Dim Min Max � For Switching, AF Driver and Amplifier Applications A 0.37 0.51 � Complementary NPN Types Available (BC817) B C B 1.20 1.40 � Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW B E "Green" Device (Notes 3 and 4) C 2.30 2.50 D E � Qualified to AEC-Q101 Standards for High Reliability G D 0.89 1.03 H Mechanical Data E 0.45 0.60 K M G 1.78 2.05 � Case: SOT-23 J � Case Material: Molded Plastic. UL Flammability H 2.80 3.00 L Classification Rating 94V-0 J 0.013 0.10 � Moisture Sensitivity: Level 1 per J-STD-020C K 0.903 1.10 � Terminals: Solderable per MIL-STD-202, Method 208 � Lead Free Plating (Matte Tin Finish annealed over L 0.45 0.61 Alloy 42 leadframe) C M 0.085 0.180 � Pin Connections: See Dia

5.11. bc807-16w-25w-40w.pdf Size:355K _diodes

BC807-16W / -25W / -40W PNP SURFACE MOUNT TRANSISTOR Lead-free Green Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications SOT-323 Complementary NPN Types Available (BC817-xxW) Dim Min Max Lead Free By Design/RoHS Compliant (Note 1) A A 0.25 0.40 "Green" Device (Note 2) C B 1.15 1.35 Mechanical Data B C C 2.00 2.20 Case: SOT-323 D 0.65 Nominal B E Case Material: Molded Plastic. "Green" Molding Compound. E 0.30 0.40 UL Flammability Classification Rating 94V-0 G H G 1.20 1.40 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish � Matte Tin annealed over Alloy 42 H 1.80 2.20 K M leadframe. Solderable per MIL-STD-202, Method 208 J 0.0 0.10 Pin Connections: See Diagram K J 0.90 1.00 D E L Marking: P/N Marking L 0.25 0.40 BC807-16W K5A M 0.10 0.18 BC807-25W K5B 0 8 BC807-40W K5C All Dimensions in mm Ordering & Date Code Information: See P

5.12. bc807u.pdf Size:522K _infineon

BC807U PNP Silicon AF Transistor Array � For AF input stages and driver applications 4 3 � High current gain 5 2 6 1 � Low collector-emitter saturation voltage � Two (galvanic) internal isolated Transistor with good matching in on package � Pb-free (RoHS compliant) package � Qualified according AEC Q101 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking Pin Configuration Package BC807U 5Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit 45 V Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 5 Emitter-base voltage VEBO 500 mA Collector current IC 1000 Peak collector current, tp ? 10 ms ICM 100 Base current IB 200 Peak base current IBM 330 mW Total power dissipation- Ptot TS ? 115 �C 150 �C Junction temperature Tj Storage temperature Tstg -65 ... 150 1 2011-08-11 BC807U Thermal Resistance Parameter Symbol Value Unit K/W Junction - soldering point1) RthJS ? 105 Electrical Characterist

5.13. bc807-16-25-40_sot-23.pdf Size:196K _mcc

BC807-16 MCC Micro Commercial Components TM BC807-25 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BC807-40 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Silicon � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) General Purpose � Capable of 0.3Watts of Power Dissipation. � Collector-current 0.5A Transistors � Collector-base Voltage 50V � Operating and storage junction temperature range: -55OC to +150OC � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 SOT-23 Mechanical Data A � Case: SOT-23 Molded Plastic D 3 C � Terminals: Solderable per MIL-STD-202, Method 208 � Weight: 0.008 grams (approx.) B C � Device Marking: BC807-16 5A1 BC807-25 5B B E BC807-40 5C F E O Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units G H J OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage 45 --- Vdc (I =

5.14. bc807-16lt1-25lt1-40lt1.pdf Size:118K _onsemi

BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V 3 Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V 1 2 Collector Current - Continuous IC -500 mAdc SOT-23 THERMAL CHARACTERISTICS CASE 318 Characteristic Symbol Max Unit STYLE 6 Total Device Dissipation FR- 5 Board, PD (Note 1) TA = 25�C 225 mW Derate above 25�C 1.8 mW/�C MARKING DIAGRAM Thermal Resistance, RqJA 556 �C/W Junction-to-Ambient Total Device Dissipation Alumina PD 5xx M G Substrate, (Note 2) TA = 25�C 300 mW G Derate above 25�C 2.4 mW/�C 1 Thermal Resistance, RqJA 417 �C/W 5xx = Device Code Junction-to-Ambient xx = A1, B1, or C Junction and Storage Temperature TJ, Tstg -55 to +150 �C M = Date Code* G = Pb-Free Package St

5.15. bc807w.pdf Size:178K _secos

BC807 -16W, -25W, -40W -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES ? Ideally suited for automatic insertion A L ? Epitaxial planar die construction 3 3 ? Complementary to BC817W Top View C B 1 1 2 2 K E PACKAGE INFORMATION Weight: 0.0074 g (approximately) D Collector H J F G ?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. MARKING ?? B 1.80 2.45 H 0.525 REF. Base BC807-16W: 5A C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - BC807-25W: 5B ?? E 1.20 1.40 L 0.650 TYP. BC807-40W: 5C, YL F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS at Ta = 25°C PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature

5.16. bc807.pdf Size:407K _secos

BC807-16, -25, -40 -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free & RoHS compliant FEATURES Ideally suited for automatic insertion SOT-23 Epitaxial planar die construction Collector 3 Dim Min Max Complementary to BC817 (NPN Type) A 2.800 3.040 1 Base B 1.200 1.400 2 Emitter C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 MARKING L J J 0.085 0.177 K BC807-16:5A; 3 K 0.450 0.600 Top View S B 1 2 L 0.890 1.020 BC807-25:5B; C S 2.100 2.500 V G BC807-40:5C H D V 0.450 0.600 All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Power Dissipation PC 300 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? CHARACTERISTICS at Ta = 2

5.17. bc807a.pdf Size:35K _kec

SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS ·Complementary to BC817A. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25?) J 0.13+0.10/-0.05 K 0.00 ~ 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.55 P P M 0.20 MIN VCBO -50 V Collector-Base Voltage N 1.00+0.20/-0.10 P 7 VCEO -45 V Collector-Emitter Voltage M VEBO -5 V Emitter-Base Voltage IC -500 mA Collector Current 1. EMITTER 2. BASE IE Emitter Current 500 mA 3. COLLECTOR PC* Collector Power Dissipation 350 mW Tj Junction Temperature 150 ? SOT-23 Tstg -55?150 ? Storage Temperature Range * : Package Mounted On 99.9% Alumina 10?8?0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-20V, IE=0 Collector Cut-off Current - - -0.1 ? A IEBO VEB=-5V,

5.18. bc807w.pdf Size:34K _kec

SEMICONDUCTOR BC807W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M ·Complementary to BC817W. DIM MILLIMETERS _ + A 2.00 0.20 D 2 _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E 2.10 + 0.20 G 0.65 MAXIMUM RATING (Ta=25?) H 0.15+0.1/-0.06 CHARACTERISTIC SYMBOL RATING UNIT J 1.30 K 0.00~0.10 L 0.70 VCBO -50 V Collector-Base Voltage H M 0.42 N 0.10 MIN VCEO -45 V Collector-Emitter Voltage N N K VEBO -5 V Emitter-Base Voltage IC -500 mA Collector Current 1. EMITTER 2. BASE IE Emitter Current 500 mA 3. COLLECTOR PC Collector Power Dissipation 100 mW Tj Junction Temperature 150 ? USM Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-20V, IE=0 Collector Cut-off Current - - -0.1 ? A IEBO VEB=-5V, IC=0 Emitter Cut-off Current - - -0.1 ? A hFE(1) VCE=-1V, IC

5.19. bc807.pdf Size:35K _kec

SEMICONDUCTOR BC807 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS ·Complementary to BC817. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25?) J 0.13+0.10/-0.05 K 0.00 ~ 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.55 P P M 0.20 MIN VCBO -50 V Collector-Base Voltage N 1.00+0.20/-0.10 P 7 VCEO -45 V Collector-Emitter Voltage M VEBO -5 V Emitter-Base Voltage IC -800 mA Collector Current 1. EMITTER 2. BASE IE Emitter Current 800 mA 3. COLLECTOR PC* Collector Power Dissipation 350 mW Tj Junction Temperature 150 ? SOT-23 Tstg -55?150 ? Storage Temperature Range * : Package Mounted On 99.9% Alumina 10?8?0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-20V, IE=0 Collector Cut-off Current - - -0.1 ? A IEBO VEB=-5V, IC

5.20. bc807w.pdf Size:269K _htsemi

BC807W TRANSISTOR (PNP) BC807-16W SOT-23 BC807-25W BC807-40W FEATURES 1. BASE ·Ldeally suited for automatic insertion 2. EMITTER ·epitaxial planar die construction 3. COLLECTOR ·complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= -10?A, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO -5 V IE= -1?A, IC=0 Collector cut-off current ICBO VCB= -45V, IE=0 -0.1 ?A Collector cut-

5.21. bc807.pdf Size:269K _htsemi

BC807 TRANSISTOR (PNP) BC807-16 SOT-23 BC807-25 BC807-40 FEATURES 1. BASE ·Ldeally suited for automatic insertion 2. EMITTER ·epitaxial planar die construction 3. COLLECTOR ·complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= -10?A, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO -5 V IE= -1?A, IC=0 Collector cut-off current ICBO VCB= -45V, IE=0 -0.1 ?A Collector cut-off

5.22. bc807.pdf Size:261K _gsme

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM807-16 GM807-25 GM807-40 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Rating Characteristic Symbol Unit ??? ???? ?? ?? Collector-Emitter Voltage VCEO -45 Vdc ???????? Collector-Base Voltage VCBO -50 Vdc ???-???? Emitter-Base Voltage VEBO -5.0 Vdc ???-???? Collector Current—Continuous Ic -500 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ???? ?? ??? ?? Total Device Dissipation ????? FR-5 Board(1) PD 225 mW TA=25???? 25? 1.8 mW/? Derate above25??? 25??? Total Device Dissipation ????? Alumina Substrate ?????,(2)TA=25? PD 300 mW Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature] TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING

5.23. bc807_sot-23.pdf Size:185K _lge

BC807-16 BC807-25 BC807-40 1. BASE SOT-23 Transistor (PNP) 2. EMITTER 3. COLLECTOR SOT-23 Features Ldeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= -10?A, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO -5 V IE= -1?A, IC=0 Collector cut-off current ICBO VCB= -4

5.24. bc807w.pdf Size:197K _lge

BC807-16W BC807-25W BC807-40W SOT-323 Transistor(PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ldeally suited for automatic insertion epitaxial planar die construction complementary to BC817W MARKING: 16W:5A; 25W:5B; 40W:5C MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= -10?A, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO IE= -1?A, IC=0 -5 V Collector cut-off current ICBO VCB= -20 V , IE=0 -0.1 ?A Colle

5.25. bc807-16-25-40.pdf Size:337K _wietron

BC807-16/ BC807-25 BC807-40 COLLECTOR 3 General Purpose Transistor MARKING DIAGRAM 3 PNP Silicon 1 BASE 1 2 2 SOT-23 EMITTER ( T =25 C unless otherwise noted) Maximum Ratings A Symbol Rating Value Unit VCEO -45 V Collector-Emitter Voltage VCBO Collector-Base Voltage -50 V Emitter-Base VOltage VEBO -5.0 V Collector Current-Continuous IC 500 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1) PD mW (Note 1.)TA=25 C 225 Derate above 25 C 1.8 mW/ C R JA q Thermal Resistance, Junction to Ambient C/W 556 Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C 300 mW PD Derate above 25 C 2.4 mW/ C R JA Thermal Resistance, Junction to Ambient q 417 C/W TJ,Tstg Junction and Storage, Temperature -55 to +150 C Device Marking BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1 1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. WEITRON Rev.A 16-Dec-08 http://www.wei

5.26. bc807-16w-25w-40w.pdf Size:158K _wietron

BC807-16W BC807-25W BC807-40W COLLECTOR General Purpose Transistor 3 3 PNP Silicon 1 1 P b Lead(Pb)-Free BASE 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25°Cunless otherwise noted) Rating Symbol Value Unit VCEO Collector-Emitter Voltage -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage -5.0 V VEBO IC Collector Current-Continuous 500 mA Total Device Dissipation FR-5 Board(1) PD 150 mW TA=25°C Thermal Resistance, Junctionto Ambient(1) R?JA 833 °C/W TJ -55 to +150 °C Junction Temperature Range Tstg Storage Temperature Range -55 to +150 °C Device Marking BC807-16W = 5A , BC807-25W = 5B , BC807-40W = 1. FR-5 = 1.0 x 0.75 x 0.062 in. WEITRON 1/3 22-Jul-10 http://www.weitron.com.tw BC807-16W BC807-25W WEITRON BC807-40W Electrical Characteristics(TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO -45 - - V IC=-10mA Collector-Base Br

See also transistors datasheet: 2PC4617Q , 2PC4617R , 2PD1820AR , 2PD1820AS , 2PD601ARW , 2PD601ASW , 2PD601BRL , 2PD601BSL , 2N4403 , BC807W , BC817DPN , BC817W , BC846AT , BC846BT , BC846S , BC846T , BC846W .

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