BFG410W Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFG410W

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.054

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 4.5

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.012

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 22000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of BFG410W transistor: CMPAK-4

BFG410W Equivalent Transistors - Cross-Reference Search

BFG410W PDF document for downloads:

1.1. bfg410w.pdf Size:371K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING ? Very high power gain PIN DESCRIPTION ? Low noise figure 1emitter ? High transition frequency 2 base ? Emitter is thermal lead 3emitter ? Low feedback capacitance. 4 collector APPLICATIONS ? RF front end ? Wideband applications, e.g. analog and digital cellular 3 4 handbook, halfpage telephones, cordless telephones (PHS, DECT, etc.) ? Radar detectors ? Pagers 21 ? Satellite television tuners (SATV) Top view MSB842 ? High frequency oscillators. DESCRIPTION Marking code: P4. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNI

1.2. bfg410w_4.pdf Size:85K _philips

DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING • Very high power gain PIN DESCRIPTION • Low noise figure 1 emitter • High transition frequency 2 base • Emitter is thermal lead 3 emitter • Low feedback capacitance. 4 collector APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular 34 handbook, halfpage telephones, cordless telephones (PHS, DECT, etc.) • Radar detectors • Pagers 21 • Satellite television tuners (SATV) Top view MSB842 • High frequency oscillators. DESCRIPTION Marking code: P4. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER

See also transistors datasheet: BF824W , BFG10W , BFG25A , BFG25AW , BFG310 , BFG310W , BFG325 , BFG325W , BC337 , BFG424F , BFG424W , BFG540 , BFG540W , BFG541 , BFQ540 , BFQ591 , BFR505 .

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