PBSS4160DS Transistor Datasheet. Parameters and Characteristics.

Type Designator: PBSS4160DS

Material of transistor: Si

Polarity: NPN*NPN

Maximum collector power dissipation (Pc), W: 0.7

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 220

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 250

Noise Figure, dB: -

Package of PBSS4160DS transistor: SOT457

PBSS4160DS Equivalent Transistors - Cross-Reference Search

PBSS4160DS PDF document for downloads:

1.1. pbss4160dpn.pdf Size:258K _philips

PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Complementary MOSFET driver Half and full bridge motor drivers Dual low power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) VCEO collector-emitter voltage open base - - 60 V [1] IC collector current (DC) - - 1 A ICM peak collector current single pulse; tp ? 1 ms - -

1.2. pbss4160ds.pdf Size:207K _philips

PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 04 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Dual low power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage open base - - 60 V [1] IC collector current - - 1 A ICM peak collector current single pulse; - - 2 A tp ? 1ms [2] RCEsat collector-emitter

2.1. pbss4160t.pdf Size:341K _philips

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet 2004 May 12 Supersedes data of 2003 Jun 24 NXP Semiconductors Product data sheet 60 V, 1 A PBSS4160T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT • High collector current capability IC and ICM VCEO collector-emitter voltage 60 V • High efficiency, reduces heat generation IC collector current (DC) 1 A • Reduces printed-circuit board area required ICM peak collector current 2 A • Cost effective replacement for medium power transistor RCEsat equivalent on-resistance 250 m? BCP55 and BCX55. PINNING APPLICATIONS PIN DESCRIPTION • Major application segments: 1 base – Automotive 42 V power 2 emitter – Telecom infrastructure 3 collector – Industrial. • Power management: – DC-to-DC conversion handbook, halfpage 3 – Supply line s

See also transistors datasheet: PBSS4041PT , PBSS4120T , PBSS4130T , PBSS4140DPN , PBSS4140T , PBSS4140U , PBSS4140V , PBSS4160DPN , 9013 , PBSS4160T , PBSS4160U , PBSS4160V , PBSS4220V , PBSS4230T , PBSS4240DPN , PBSS4240T , PBSS4240V .

Keywords