PDTC124TE Transistor Datasheet. Parameters and Characteristics.

Type Designator: PDTC124TE

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of PDTC124TE transistor: SOT416

PDTC124TE Equivalent Transistors - Cross-Reference Search

PDTC124TE PDF document for downloads:

2.1. pdtc124t_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC124T series NPN resistor-equipped transistors; R1 = 22 k?, R2 = open Product data sheet 2004 Aug 13 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC124T series R1 = 22 k?, R2 = open FEATURES QUICK REFERENCE DATA • Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT • Simplified circuit design VCEO collector-emitter - 50 V • Reduction of component count voltage IO output current (DC) - 100 mA • Reduced pick and place costs. R1 bias resistor 22 - k? R2 open - - - APPLICATIONS • General purpose switching and amplification DESCRIPTION • Inverter and interface circuits NPN resistor-equipped transistor (see “Simplified outline, • Circuit driver. symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PNP COMPLEMENT PHILIPS EIAJ PDTC124TE SOT416 SC-75 41 PDTA124TE PDTC124TEF SOT490 SC-89 35 PDTA124TEF PDTC124TK SOT34

3.1. pdtc124ek_3.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC124EK NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Sep 08 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 • Simplification of circuit design 3 • Reduces number of components R1 1 and board space. R2 APPLICATIONS 2 1 2 • Especially suitable for space Top view reduction in interface and driver MAM284 circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-59) and symbol. DESCRIPTION MARKING NPN resistor-equipped transistor in an SC-59 plastic package. TYPE MARKING PNP complement: PDTA124EK. NUMBER CODE 1 3 PDTC124EK 06 PINNING 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground symbol. 3 collector/output QU

3.2. pdtc124xef_2.pdf Size:54K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) 3 handbook, halfpage • Simplification of circuit design 3 R1 • Reduces number of components and board space. 1 R2 APPLICATIONS 2 12 Top view MAM412 • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-89; SOT490) and symbol. DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complement: PDTA124XEF. MARKING TYPE NUMBER MARKING CODE 1 3 PDTC124XEF 32 2 MGA893 - 1 PINNING PIN DESCRIPTION 1 base/input

3.3. pdtc124ee_2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) • Simplification of circuit design handbook, halfpage 3 3 • Reduces number of components R1 and board space. 1 R2 2 APPLICATIONS 12 Top view MAM346 • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-75; SOT416) and symbol. DESCRIPTION NPN resistor-equipped transistor in MARKING an SC-75; SOT416 plastic package. TYPE MARKING PNP complement: PDTA124EE. NUMBER CODE 1 3 PDTC124EE 06 PINNING 2 PIN DESCRIPTION MGA893 - 1 1 base/input Fig.2 Equivalent inverter 2 emitter/ground symbol. 3

3.4. pdtc124et_5.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 handbook, 4 columns • Simplification of circuit design 3 • Reduces number of components R1 and boardspace. 1 R2 APPLICATIONS 2 • Especially suitable for space 1 2 reduction in interface and driver Top view MAM097 circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION MARKING NPN resistor-equipped transistor in a SOT23 plastic package. TYPE MARKING PNP complement: PDTA124ET. NUMBER CODE(1) 1 3 PDTC124ET ?17 PINNING 2 Note MGA893 - 1 PIN DESCRIPTION 1. ? = p : Made in Hong Kong. ? = t : Made in Malaysia. 1 base/input Fig.2 Equivalent inverter 2 em

3.5. pdtc124eu_3.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC124EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EU FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 handbook, 4 columns • Simplification of circuit design 3 • Reduces number of components R1 1 and board space. R2 APPLICATIONS 2 1 2 • Especially suitable for space Top view reduction in interface and driver MAM134 circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SOT323) and symbol. DESCRIPTION MARKING NPN resistor-equipped transistor in a SOT323 plastic package. TYPE MARKING PNP complement: PDTA124EU. NUMBER CODE(1) 1 3 PDTC124EU ?06 PINNING 2 Note MGA893 - 1 PIN DESCRIPTION 1. ? = - : Made in Hong Kong. ? = t : Made in Malaysia. 1 base/input Fig.2 Equivalent inverter

3.6. pdtc124xe_3.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) • Simplification of circuit design handbook, halfpage 3 3 • Reduces number of components and board space. R1 1 R2 APPLICATIONS 2 12 • Especially suitable for space reduction in interface and Top view MAM346 driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-75; SOT416) and DESCRIPTION symbol. NPN resistor-equipped transistor in a SC-75 (SOT416) plastic package. PNP complement: PDTA124XE. MARKING TYPE NUMBER MARKING CODE 1 3 PDTC124XE 32 2 PINNING MGA893 - 1 PIN DESCRIPTION 1 base/input 2 emitter/ground Fig.2 Equivalent inverter symbol. 3 collector/output 1999 May 1

3.7. pdtc124es_2.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC124ES NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ES FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) • Simplification of circuit design handbook, halfpage 2 • Reduces number of components R1 1 1 and board space. 2 R2 3 3 APPLICATIONS • Especially suitable for space MAM364 reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (TO-92; SOT54) and symbol. DESCRIPTION NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA124ES. 1 2 PINNING 3 MGL136 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 collector/output symbol. 3 emitter/ground QUICK REFERENCE DATA SYMBOL PA

3.8. pdtc124ek_3.pdf Size:57K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC124EK NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Sep 08 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 • Simplification of circuit design 3 • Reduces number of components R1 1 and board space. R2 APPLICATIONS 2 1 2 • Especially suitable for space Top view reduction in interface and driver MAM284 circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-59) and symbol. DESCRIPTION MARKING NPN resistor-equipped transistor in an SC-59 plastic package. TYPE MARKING PNP complement: PDTA124EK. NUMBER CODE 1 3 PDTC124EK 06 PINNING 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground symbol. 3 collector/output QU

3.9. pdtc124xef_2.pdf Size:54K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) 3 handbook, halfpage • Simplification of circuit design 3 R1 • Reduces number of components and board space. 1 R2 APPLICATIONS 2 12 Top view MAM412 • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-89; SOT490) and symbol. DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complement: PDTA124XEF. MARKING TYPE NUMBER MARKING CODE 1 3 PDTC124XEF 32 2 MGA893 - 1 PINNING PIN DESCRIPTION 1 base/input

3.10. pdtc124ee_2.pdf Size:57K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) • Simplification of circuit design handbook, halfpage 3 3 • Reduces number of components R1 and board space. 1 R2 2 APPLICATIONS 12 Top view MAM346 • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-75; SOT416) and symbol. DESCRIPTION NPN resistor-equipped transistor in MARKING an SC-75; SOT416 plastic package. TYPE MARKING PNP complement: PDTA124EE. NUMBER CODE 1 3 PDTC124EE 06 PINNING 2 PIN DESCRIPTION MGA893 - 1 1 base/input Fig.2 Equivalent inverter 2 emitter/ground symbol. 3

3.11. pdtc124et_5.pdf Size:56K _philips

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 handbook, 4 columns • Simplification of circuit design 3 • Reduces number of components R1 and boardspace. 1 R2 APPLICATIONS 2 • Especially suitable for space 1 2 reduction in interface and driver Top view MAM097 circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION MARKING NPN resistor-equipped transistor in a SOT23 plastic package. TYPE MARKING PNP complement: PDTA124ET. NUMBER CODE(1) 1 3 PDTC124ET ?17 PINNING 2 Note MGA893 - 1 PIN DESCRIPTION 1. ? = p : Made in Hong Kong. ? = t : Made in Malaysia. 1 base/input Fig.2 Equivalent inverter 2 em

3.12. pdtc124eu_3.pdf Size:58K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC124EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EU FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 handbook, 4 columns • Simplification of circuit design 3 • Reduces number of components R1 1 and board space. R2 APPLICATIONS 2 1 2 • Especially suitable for space Top view reduction in interface and driver MAM134 circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SOT323) and symbol. DESCRIPTION MARKING NPN resistor-equipped transistor in a SOT323 plastic package. TYPE MARKING PNP complement: PDTA124EU. NUMBER CODE(1) 1 3 PDTC124EU ?06 PINNING 2 Note MGA893 - 1 PIN DESCRIPTION 1. ? = - : Made in Hong Kong. ? = t : Made in Malaysia. 1 base/input Fig.2 Equivalent inverter

3.13. pdtc124e_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC124E series NPN resistor-equipped transistors; R1 = 22 k?, R2 = 22 k? Product data sheet 2004 Aug 17 Supersedes data of 2003 Apr 14 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC124E series R1 = 22 k?, R2 = 22 k? FEATURES QUICK REFERENCE DATA • Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT • Simplified circuit design VCEO collector-emitter - 50 V • Reduction of component count voltage IO output current (DC) - 100 mA • Reduced pick and place costs. R1 bias resistor 22 - k? R2 bias resistor 22 - k? APPLICATIONS • General purpose switching and amplification DESCRIPTION • Inverter and interface circuits NPN resistor-equipped transistor (see “Simplified outline, • Circuit driver. symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PNP COMPLEMENT PHILIPS EIAJ PDTC124EE SOT416 SC-75 06 PDTA124EE PDTC124EEF SOT490 SC-89 36 PDTA124EEF PD

3.14. pdtc124xe_3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) • Simplification of circuit design handbook, halfpage 3 3 • Reduces number of components and board space. R1 1 R2 APPLICATIONS 2 12 • Especially suitable for space reduction in interface and Top view MAM346 driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-75; SOT416) and DESCRIPTION symbol. NPN resistor-equipped transistor in a SC-75 (SOT416) plastic package. PNP complement: PDTA124XE. MARKING TYPE NUMBER MARKING CODE 1 3 PDTC124XE 32 2 PINNING MGA893 - 1 PIN DESCRIPTION 1 base/input 2 emitter/ground Fig.2 Equivalent inverter symbol. 3 collector/output 1999 May 1

3.15. pdtc124es_2.pdf Size:58K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC124ES NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ES FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? each) • Simplification of circuit design handbook, halfpage 2 • Reduces number of components R1 1 1 and board space. 2 R2 3 3 APPLICATIONS • Especially suitable for space MAM364 reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (TO-92; SOT54) and symbol. DESCRIPTION NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA124ES. 1 2 PINNING 3 MGL136 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 collector/output symbol. 3 emitter/ground QUICK REFERENCE DATA SYMBOL PA

See also transistors datasheet: PDTC123YE , PDTC123YM , PDTC123YT , PDTC123YU , PDTC124EE , PDTC124EM , PDTC124ET , PDTC124EU , TIP31 , PDTC124TM , PDTC124TT , PDTC124TU , PDTC124XE , PDTC124XM , PDTC124XT , PDTC124XU , PDTC143EE .

Keywords