PDTC124XE Transistor Datasheet. Parameters and Characteristics.

Type Designator: PDTC124XE

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of PDTC124XE transistor: SOT416

PDTC124XE Equivalent Transistors - Cross-Reference Search

PDTC124XE PDF document for downloads:

1.1. pdtc124xef_2.pdf Size:54K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) 3 handbook, halfpage • Simplification of circuit design 3 R1 • Reduces number of components and board space. 1 R2 APPLICATIONS 2 12 Top view MAM412 • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-89; SOT490) and symbol. DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complement: PDTA124XEF. MARKING TYPE NUMBER MARKING CODE 1 3 PDTC124XEF 32 2 MGA893 - 1 PINNING PIN DESCRIPTION 1 base/input

1.2. pdtc124xe_3.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) • Simplification of circuit design handbook, halfpage 3 3 • Reduces number of components and board space. R1 1 R2 APPLICATIONS 2 12 • Especially suitable for space reduction in interface and Top view MAM346 driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-75; SOT416) and DESCRIPTION symbol. NPN resistor-equipped transistor in a SC-75 (SOT416) plastic package. PNP complement: PDTA124XE. MARKING TYPE NUMBER MARKING CODE 1 3 PDTC124XE 32 2 PINNING MGA893 - 1 PIN DESCRIPTION 1 base/input 2 emitter/ground Fig.2 Equivalent inverter symbol. 3 collector/output 1999 May 1

1.3. pdtc124xef_2.pdf Size:54K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) 3 handbook, halfpage • Simplification of circuit design 3 R1 • Reduces number of components and board space. 1 R2 APPLICATIONS 2 12 Top view MAM412 • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-89; SOT490) and symbol. DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complement: PDTA124XEF. MARKING TYPE NUMBER MARKING CODE 1 3 PDTC124XEF 32 2 MGA893 - 1 PINNING PIN DESCRIPTION 1 base/input

1.4. pdtc124xe_3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) • Simplification of circuit design handbook, halfpage 3 3 • Reduces number of components and board space. R1 1 R2 APPLICATIONS 2 12 • Especially suitable for space reduction in interface and Top view MAM346 driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-75; SOT416) and DESCRIPTION symbol. NPN resistor-equipped transistor in a SC-75 (SOT416) plastic package. PNP complement: PDTA124XE. MARKING TYPE NUMBER MARKING CODE 1 3 PDTC124XE 32 2 PINNING MGA893 - 1 PIN DESCRIPTION 1 base/input 2 emitter/ground Fig.2 Equivalent inverter symbol. 3 collector/output 1999 May 1

See also transistors datasheet: PDTC124EE , PDTC124EM , PDTC124ET , PDTC124EU , PDTC124TE , PDTC124TM , PDTC124TT , PDTC124TU , BC109 , PDTC124XM , PDTC124XT , PDTC124XU , PDTC143EE , PDTC143EM , PDTC143ET , PDTC143EU , PDTC143TE .

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