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PMBS3904 Transistor Datasheet. Parameters and Characteristics.

Type Designator: PMBS3904

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 180

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of PMBS3904 transistor: SOT23

PMBS3904 Equivalent Transistors - Cross-Reference Search

PMBS3904 PDF document for downloads:

1.1. pmbs3904.pdf Size:125K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBS3904 NPN general purpose transistor Product data sheet 2004 Feb 02 Supersedes data of 1999 Apr 22 NXP Semiconductors Product data sheet NPN general purpose transistor PMBS3904 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION handbook, halfpage 3 NPN transistor in a plastic SOT23 package. 3 PNP complement: PMBS3906. 1 MARKING 2 TYPE NUMBER MARKING CODE(1) 1 2 PMBS3904 *O4 Top view MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMBS3904 - plastic surface mounted package; 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating Syste

1.2. pmbs3904_4.pdf Size:52K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBS3904 NPN general purpose transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 20 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION handbook, halfpage 3 3 NPN transistor in a plastic SOT23 package. PNP complement: PMBS3906. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE(1) Top view MAM255 PMBS3904 ?O4 Note Fig.1 Simplified outline (SOT23) and symbol. 1. ? = p : Made in Hong Kong. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitte

3.1. pmbs3906_4.pdf Size:52K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBS3906 PNP general purpose transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 20 Philips Semiconductors Product specification PNP general purpose transistor PMBS3906 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification, e.g. telephony and professional communication equipment. handbook, halfpage DESCRIPTION 3 3 PNP transistor in a SOT23 plastic package. NPN complement: PMBS3904. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE(1) Top view MAM256 PMBS3906 ?O6 Note 1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --40 V VCEO collector-emitte

See also transistors datasheet: PHE13005X , PHE13007 , PHE13009 , PIMD2 , PIMD3 , PIMH9 , PIMN31 , PIMT1 , 2N5401 , PMBS3906 , PMBT2222 , PMBT2222A , PMBT2369 , PMBT2907 , PMBT2907A , PMBT3906 , PMBT4401 .

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