PMSTA56 Transistor Datasheet. Parameters and Characteristics.

Type Designator: PMSTA56

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of PMSTA56 transistor: SOT323

PMSTA56 Equivalent Transistors - Cross-Reference Search

PMSTA56 PDF document for downloads:

1.1. pmsta55_pmsta56_3.pdf Size:49K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PMSTA55; PMSTA56 PNP general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1998 Jul 21 Philips Semiconductors Product specification PNP general purpose transistors PMSTA55; PMSTA56 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector • Intended for telephony and professional communication equipment. DESCRIPTION 3 handbook, halfpage PNP transistor in a SOT323 plastic package. 3 NPN complements: PMSTA05 and PMSTA06. 1 MARKING 2 TYPE NUMBER MARKING CODE(1) 1 2 PMSTA55 ?2H Top view MAM048 PMATA56 ?2G Note Fig.1 Simplified outline (SOT323) and symbol. 1. ? = - : Made in Hong Kong. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter PMSTA55 --60 V PMS

4.1. pmsta55.pdf Size:38K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PMSTA55; PMSTA56 PNP general purpose transistors 1997 Jun 02 Product specification File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistors PMSTA55; PMSTA56 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector • Intended for telephony and professional communication equipment. 3 handbook, halfpage DESCRIPTION 3 PNP transistor in a SOT323 plastic package. NPN complements: PMSTA05 and PMSTA06. 1 MARKING 2 TYPE NUMBER MARKING CODE 1 2 PMSTA55 t2H Top view MAM048 PMATA56 t2G Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter PMSTA55 --60 V PMSTA56 --80 V VCEO collector-emitter voltage open base PMSTA55 --60 V PMSTA56 --80 V ICM peak collector current --5

5.1. pmsta42_pmsta43.pdf Size:104K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product data sheet 1999 May 21 Supersedes data of 1997 Jun 19 NXP Semiconductors Product data sheet NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • High voltage (max. 200 V). 1 base 2 emitter APPLICATIONS 3 collector • High-voltage switching in telephony applications. DESCRIPTION 3 handbook, halfpage NPN high-voltage transistor in a SOT323 plastic package. PNP complements: PMSTA92 and PMSTA93. 3 MARKING 1 TYPE NUMBER MARKING CODE(1) 2 1 2 PMSTA42 ?1D PMSTA43 ?1E Top view MAM062 Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter PMSTA42 - 300 V PMSTA43 - 200 V V

5.2. pmsta05_pmsta06_2.pdf Size:50K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PMSTA05; PMSTA06 NPN general purpose transistors 1999 Apr 29 Product specification Supersedes data of 1997 Jun 16 Philips Semiconductors Product specification NPN general purpose transistors PMSTA05; PMSTA06 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector • Primarily intended for telephony and professional communication equipment. DESCRIPTION 3 handbook, halfpage NPN transistor in a SOT323 plastic package. 3 PNP complements: PMSTA55 and PMSTA56. 1 MARKING 2 TYPE NUMBER MARKING CODE(1) 1 2 PMSTA05 ?1H Top view MAM062 PMATA06 ?1G Note Fig.1 Simplified outline (SOT323) and symbol. 1. ? = - : Made in Hong Kong. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter PMSTA05 -

5.3. pmsta42_pmsta43_2.pdf Size:47K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors 1999 May 21 Product specification Supersedes data of 1997 Jun 19 Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • High voltage (max. 200 V). 1 base 2 emitter APPLICATIONS 3 collector • High-voltage switching in telephony applications. DESCRIPTION 3 handbook, halfpage NPN high-voltage transistor in a SOT323 plastic package. PNP complements: PMSTA92 and PMSTA93. 3 1 MARKING TYPE NUMBER MARKING CODE(1) 2 1 2 PMSTA42 ?1D PMSTA43 ?1E Top view MAM062 Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter PMSTA42 - 300 V PMSTA43 - 200

See also transistors datasheet: PMST5550 , PMST5551 , PMST6428 , PMST6429 , PMSTA05 , PMSTA06 , PMSTA42 , PMSTA55 , 2N1711 , PMSTA92 , PRF947 , PRF949 , PRF957 , PSSI2021SAY , PUMB1 , PUMB10 , PUMB11 .

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