PUMD18 Transistor Datasheet. Parameters and Characteristics.

Type Designator: PUMD18

Material of transistor: Si

Polarity: NPN*PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of PUMD18 transistor: SOT363

PUMD18 Equivalent Transistors - Cross-Reference Search

PUMD18 PDF document for downloads:

5.1. pemd16_pumd16.pdf Size:62K _philips

PEMD16; PUMD16 NPN/PNP resistor-equipped transistors; R1 = 22 k?, R2 = 47 k? Rev. 02 — 7 June 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP resistor-equipped transistors. Table 1: Product overview Type number Package PNP/PNP NPN/NPN complement complement Philips JEITA PEMD16 SOT666 - PEMB16 PEMH16 PUMD16 SOT363 SC-88 PUMB16 PUMH16 1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost 1.3 Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications 1.4 Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) 15.4 22 28.6 k? R2/R1 bias resistor ratio 1.7 2.1 2.6 PEMD16; PUMD16 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k?,

5.2. pemd12_pumd12.pdf Size:140K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 k?, R2 = 47 k? Product data sheet 2003 Oct 08 Supersedes data of 2001 Nov 7 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; PEMD12; PUMD12 R1 = 47 k?, R2 = 47 k? FEATURES QUICK REFERENCE DATA • Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT • Simplified circuit design VCEO collector-emitter - 50 V • Reduction of component count voltage IO output current (DC) - 100 mA • Reduced pick and place costs. TR1 NPN - - - TR2 PNP - - - APPLICATIONS R1 bias resistor 47 - k? • Low current peripheral driver R2 bias resistor 47 - k? • Replacement of general purpose transistors in digital applications DESCRIPTION • Control of IC inputs. NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE PNP/PNP NPN/NPN MARKING CODE NUMBER COMPLEMENT COMPLEMEN

5.3. pemd15_pumd15.pdf Size:65K _philips

PEMD15; PUMD15 NPN/PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k? Rev. 03 — 2 September 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors (RET) Table 1. Product overview Type number Package PNP/PNP NPN/NPN complement complement NXP JEITA PEMD15 SOT666 - PEMB15 PEMH15 PUMD15 SOT363 SC-88 PUMB15 PUMH15 1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs 1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current (DC) - - 100 mA R1 bias resistor 1 (input) 3.3 4.7 6.1 k? R2/R1 bias resistor ratio 0.8 1 1.2 PEMD15; PUMD15 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 4.7 k?

5.4. pemd10_pumd10.pdf Size:142K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PEMD10; PUMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 k?, R2 = 47 k? Product data sheet 2004 Apr 15 Supersedes data of 2003 Nov 04 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; PEMD10; PUMD10 R1 = 2.2 k?, R2 = 47 k? FEATURES QUICK REFERENCE DATA • Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT • Simplifies circuit design VCEO collector-emitter - 50 V • Reduces component count voltage IO output current (DC) - 100 mA • Reduces pick and place costs. TR1 NPN - - - TR2 PNP - - - APPLICATIONS R1 bias resistor 2.2 - k? • Low current peripheral driver R2 bias resistor 47 - k? • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE PNP/PNP NPN/NPN TYPE NUMBER MARKING CODE COMPLEMENT COMPLEM

5.5. pemd13_pumd13.pdf Size:141K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PEMD13; PUMD13 NPN/PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 47 k? Product data sheet 2003 Oct 08 Supersedes data of 2001 Feb 27 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; PEMD13; PUMD13 R1 = 4.7 k?, R2 = 47 k? FEATURES QUICK REFERENCE DATA • Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT • Simplified circuit design VCEO collector-emitter - 50 V • Reduction of component count voltage IO output current (DC) - 100 mA • Reduced pick and place costs. TR1 NPN - - - TR2 PNP - - - APPLICATIONS R1 bias resistor 4.7 - k? • Low current peripheral driver R2 bias resistor 47 - k? • Replacement of general purpose transistors in digital applications DESCRIPTION • Control of IC inputs. NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE PNP/PNP NPN/NPN MARKING CODE NUMBER COMPLEMENT COMPL

5.6. pumd10_2.pdf Size:69K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD10 NPN/PNP resistor-equipped transistors 1999 May 20 Product specification Supersedes data of 1998 Dec 04 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD10 FEATURES • Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 k? and 47 k? respectively) 6 5 4 handbook, halfpage • No mutual interference between the transistors 6 5 4 • Simplification of circuit design R1 R2 • Reduces number of components and board space. TR2 TR1 R2 R1 APPLICATIONS 1 2 3 Top view • Especially suitable for space reduction in portable MAM343 1 2 3 equipment • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-88) and symbol. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package. PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 6, 3 2, 5 base TR1; TR2 6, 3 collecto

5.7. pumd12_1.pdf Size:66K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD12 NPN/PNP resistor-equipped transistor 1999 Apr 26 Product specification Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD12 FEATURES 6 5 4 handbook, halfpage • Transistors with different polarity and built-in bias resistors 6 5 4 R1 and R2 (typ. 47 k? each) R1 R2 TR2 • No mutual interference between TR1 the transistors R2 R1 1 2 3 • Simplification of circuit design Top view • Reduces number of components MAM343 1 2 3 and board space. Fig.1 Simplified outline (SC-88) and symbol. APPLICATIONS PINNING • Especially suitable for space reduction in interface and driver PIN DESCRIPTION circuits 1, 4 emitter TR1; TR2 2, 5 6, 3 • Inverter circuit configurations 2, 5 base TR1; TR2 without use of external resistors. 1, 4 6, 3 collector TR1; TR2 MBK120 DESCRIPTION MARKING NPN/PNP resistor-equipped TYPE transistors in an SC-88 plastic Fig.2 Equivalent

See also transistors datasheet: PUMB9 , PUMD10 , PUMD12 , PUMD13 , PUMD14 , PUMD15 , PUMD16 , PUMD17 , BC337 , PUMD19 , PUMD2 , PUMD20 , PUMD24 , PUMD3 , PUMD30 , PUMD4 , PUMD48 .

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