2STA1962 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2STA1962

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 230

Maximum collector-emitter voltage |Uce|, V: 230

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2STA1962 transistor: TO3P

2STA1962 Equivalent Transistors - Cross-Reference Search

2STA1962 PDF document for downloads:

1.1. 2sta1962.pdf Size:178K _st

2STA1962 High power PNP epitaxial planar bipolar transistor Features ¦ High breakdown voltage VCEO = -230 V ¦ Complementary to 2STC5242 ¦ Fast-switching speed ¦ Typical fT = 30 MHz Application 3 2 1 ¦ Audio power amplifier TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor Figure 1. Internal schematic diagram shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA1962 2STA1962 TO-3P Tube July 2008 Rev 3 1/9 www.st.com 9 Electrical ratings 2STA1962 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -230 V VCEO Collector-emitter voltage (IB = 0) -230 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -15 A ICM Collector peak current -30 A Ptot Total dissipation at TC = 25 °C 150 W Tstg Storage temperature -55 to 150

4.1. 2sta1943.pdf Size:188K _st

2STA1943 High power PNP epitaxial planar bipolar transistor Features ¦ High breakdown voltage VCEO > -230V ¦ Complementary to 2STC5200 ¦ Fast-switching speed ¦ Typical fT = 30 MHz Application 3 2 1 ¦ Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor Figure 1. Internal schematic diagram shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA1943 2STA1943 TO-264 Tube December 2007 Rev 2 1/9 www.st.com 9 Electrical ratings 2STA1943 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -230 V VCEO Collector-emitter voltage (IB = 0) -230 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -15 A ICM Collector peak current -30 A Ptot Total dissipation at TC = 25°C 150 W Tstg Storage temperature -55 to 1

5.1. 2sta1837.pdf Size:136K _st

2STA1837 PNP power bipolar transistor Preliminary data Features ¦ High breakdown voltage VCEO = -230 V ¦ Complementary to 2STC4793 ¦ High transition frequency, typical fT = 70 MHz Applications 3 ¦ Audio power amplifier 2 1 ¦ Drive stage amplifier TO-220FP Description This device is a PNP transistor manufactured using new “PB-HDC” (power bipolar high density Figure 1. Internal schematic diagram current) technology. The resulting transistor shows good gain linearity behavior. Table 1. Device summary Order code Marking Package Packaging 2STA1837 2STA1837 TO-220FP Tube March 2010 Doc ID 15402 Rev 2 1/7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 7 change without notice. Electrical ratings 2STA1837 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -230 V VCEO Collector-emitter voltage (IB = 0) -230 V VEBO

5.2. 2sta1695.pdf Size:167K _st

2STA1695 High power PNP epitaxial planar bipolar transistor Features ¦ High breakdown voltage VCEO = -140 V ¦ Complementary to 2STC4468 ¦ Typical ft = 20 MHz ¦ Fully characterized at 125 oC 3 2 Applications 1 ¦ Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Table 1. Device summary Order code Marking Package Packaging 2STA1695 2STA1695 TO-3P Tube November 2008 Rev 2 1/9 www.st.com 9 Electrical ratings 2STA1695 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -140 V VCEO Collector-emitter voltage (IB = 0) -140 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -10 A ICM Collector p

5.3. 2sta1694.pdf Size:142K _st

2STA1694 High power PNP epitaxial planar bipolar transistor Features ¦ High breakdown voltage VCEO = -120 V ¦ Complementary to 2STC4467 ¦ Fast-switching speed ¦ Typical ft = 20 MHz ¦ Fully characterized at 125 oC 3 2 1 Applications TO-3P ¦ Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA1694 2STA1694 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8 Electrical ratings 2STA1694 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -120 V VCEO Collector-emitter voltage (IB = 0) -120 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -8 A ICM Collector peak current (tP < 5 ms) -16 A PTOT Total dissipation at

See also transistors datasheet: PZTA14 , PZTA44 , 2ST2121 , 2ST31A , 2ST5949 , 2STA1694 , 2STA1695 , 2STA1943 , BF199 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2STC4467 , 2STC4468 , 2STC5200 , 2STC5242 .

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