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2SC5765 Transistor (IC) Datasheet. Cross Reference Search. 2SC5765 Equivalent

Type Designator: 2SC5765

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W:

Maximum collector-base voltage |Ucb|, V:

Maximum collector-emitter voltage |Uce|, V: 10

Maximum emitter-base voltage |Ueb|, V:

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 450

Noise Figure, dB: -

Package of 2SC5765 transistor: MINI

2SC5765 Transistor Equivalent Substitute - Cross-Reference Search

2SC5765 PDF:

1.1. 2sc5765.pdf Size:158K _toshiba

2SC5765
2SC5765

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25°C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Base vol

1.2. 2sc5765.pdf Size:182K _utc

2SC5765
2SC5765

UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC

4.1. 2sc5764.pdf Size:31K _sanyo

2SC5765
2SC5765

Ordering number : ENN6971A 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Features Package Dimensions • High breakdown voltage. unit : mm • High reliability. 2041A • High-speed switching. [2SC5764] • Wide ASO. 4.5 10.0 2.8 • Adoption of MBIT process. 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector 3 : Emitter

4.2. 2sc5763.pdf Size:30K _sanyo

2SC5765
2SC5765

Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features Package Dimensions • High breakdown voltage. unit : mm • High reliability. 2010C • High-speed switching. [2SC5763] • Wide ASO. 10.2 4.5 • Adoption of MBIT process. 3.6 5.1 1.3 1.2 0.8 0.4 1 : Base 2 : Collector 1 2 3 3 : Emitter SANYO : TO-220 S

4.3. 2sc5761.pdf Size:75K _nec

2SC5765
2SC5765

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low noise ? high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fm

4.4. 2sc5764.pdf Size:275K _inchange_semiconductor

2SC5765
2SC5765

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC5764 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V V

4.5. 2sc5763.pdf Size:283K _inchange_semiconductor

2SC5765
2SC5765

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC5763 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V V

See also transistors datasheet: 2SC4738FT , 2SC5232 , 2SC5233 , 2SC5376 , 2SC5376CT , 2SC5376F , 2SC5376FV , 2SC5720 , 2N2905 , 2SC5766 , 2SC6026 , 2SC6026CT , 2SC6026MFV , 2SC6067 , 2SC6100 , 2SC6132 , 2SC6133 .

Search Terms:

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