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RN1103MFV
Transistor Datasheet. Parameters and Characteristics. Type Designator: RN1103MFV
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.1
Maximum junction temperature (Tj), °C:
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 0
Noise Figure, dB: - Package of RN1103MFV
transistor: SOT-723_VESM
RN1103MFV
Equivalent Transistors - Cross-Reference Search RN1103MFV
PDF document for downloads:
1.1. rn1101mfv_rn1102mfv_rn1103mfv_rn1104mfv_rn1105mfv_rn1106mfv.pdf  Size:1016K _toshiba  |
 | RN1101MFV?RN1106MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101MFV,RN1102MFV,RN1103MFV
RN1104MFV,RN1105MFV,RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Ultra-small package, suited to very high density mounting
1.2 ± 0.05
Incorporating a bias resistor into the transistor reduces the number of parts,
0.80 ± 0.05
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
A wide range of resistor values is available for use in various circuits.
1
1
Complementary to the RN2101MFV to RN2106MFV
3
Equivalent Circuit and Bias Resistor Values
2
Type No. R1 (k?) R2 (k?)
RN1101MFV 4.7 4.7
RN1102MFV 10 10
RN1103MFV 22 22
RN1104MFV 47 47
1. BASE
RN1105MFV 2.2 47
2. EMITTER
VESM
3. COLLECTOR
RN1106MFV 4.7 47
JEDEC ?
JEITA ?
2-1L1A
TOSHIBA
Absolute Maximum Ratings (Ta = 25°C) Weight: 1.5 mg (typ.)
Characteristic Symbol Rating Unit
|
4.1. rn1101fs_rn1102fs_rn1103fs_rn1104fs_rn1105fs_rn1106fs.pdf Size:126K _toshiba  |
 | RN1101FS~RN1106FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101FS,RN1102FS,RN1103FS
RN1104FS,RN1105FS,RN1106FS
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
1
compact equipment and save assembly cost.
3
• Complementary to RN2101FS~RN2106FS
2
0.8±0.05
0.1±0.05
1.0±0.05
Equivalent Circuit and Bias Resistor Values
C
Type No. R1 (k?) R2 (k?)
0.1±0.05
RN1101FS 4.7 4.7
R1
B
RN1102FS 10 10
1.BASE
RN1103FS 22 22
2.EMITTER
fSM
3.COLLECOTR
RN1104FS 47 47
E
RN1105FS 2.2 47
JEDEC ?
RN1106FS 4.7 47
JEITA ?
TOSHIBA 2-1E1A
Weight: 0.0006g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
RN1101FS~1106FS
Collector-emitter voltage VCEO 20 V
RN1101 |
5.1. rn1107fs_rn1108fs_rn1109fs.pdf Size:129K _toshiba  |
 | RN1107FS~RN1109FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107FS,RN1108FS,RN1109FS
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN2107FS~RN2109FS
1
3
2
0.8±0.05
Equivalent Circuit and Bias Resistor Values
0.1±0.05
1.0±0.05
C
Type No. R1 (k?) R2 (k?)
RN1107FS 10 47
R1
0.1±0.05
B
RN1108FS 22 47
RN1109FS 47 22
1.BASE
2.EMITTER
E
fSM
3.COLLECOTR
JEDEC ?
JEITA ?
TOSHIBA 2-1E1A
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Weight: 0.0006 g (typ.)
common)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
RN1107FS~
RN1109FS
Collector-emitter voltage VCEO 20 V
RN1107FS 6
Emitter-base voltage RN1108FS VEBO 7 V
RN1109FS 15 |
5.2. rn1107mfv_rn1108mfv_rn1109mfv.pdf Size:361K _toshiba  |
 | RN1107MFV~RN1109MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
(Bias Resistor built-in Transistor)
RN1107MFV,RN1108MFV,RN1109MFV
Unit: mm
1.2 ± 0.05
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications 0.80 ± 0.05
Ultra-small package, suited to very high density mounting
1
1
Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost. 3
A wide range of resistor values is available for use in various circuits.
2
Complementary to the RN2107MFV to RN2109MFV
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
1. BASE
RN1107MFV 10 47
2. EMITTER
VESM
3. COLLECTOR
RN1108MFV 22 47
RN1109MFV 47 22 JEDEC ?
JEITA ?
TOSHIBA 2-1L1A
Weight: 1.5 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1107MFV
to RN1109 |
5.3. rn1101ct_rn1106ct_090413.pdf Size:167K _toshiba  |
 | RN1101CT ~ RN1106CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101CT,RN1102CT,RN1103CT
RN1104CT,RN1105CT,RN1106CT
Switching Applications
Unit: mm
Inverter Circuit Applications 0.6±0.05
0.5±0.03
Interface Circuit Applications
Driver Circuit Applications
3
• Incorporating a bias resistor into a transistor reduces parts count.
1 2
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN2101CT to RN2106CT
0.35±0.02 0.05±0.03
0.15±0.03
Equivalent Circuit and Bias Resistor Values
C
Type No. R1 (k?) R2 (k?)
1.BASE
RN1101CT 4.7 4.7
2. EMITTER
R1
CST3
B
RN1102CT 10 10
3, COLLECTOR
RN1103CT 22 22
JEDEC ?
RN1104CT 47 47
E
JEITA ?
RN1105CT 2.2 47
TOSHIBA 2-1J1A
RN1106CT 4.7 47
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
RN1101 |
5.4. rn1107-1108-1109_ xh_xi_xj_sot416.pdf Size:138K _toshiba  |
 | RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
RN1107 10 47
RN1108 22 47
RN1109 47 22
JEDEC ?
EIAJ ?
TOSHIBA 2-2H1A
Weight: 2.4mg
Maximum Ratings (Ta = 25°
°C)
°
°
Characteristic Symbol Rating Unit
Collector-base voltage RN1107~1109 VCBO 50 V
Collector-emitter voltage RN1107~1109 VCEO 50 V
RN1107 6
Emitter-base voltage RN1108 VEBO 7 V
RN1109 15
Collector current RN1107~1109 Ic 100 mA
Collector power dissipation RN1107~1109 Pc 100 mW
Junction temperature RN1107~1109 Tj 150 C
Storage temperature range RN1107~1109 Tstg -55~150 C
RN1107~1109
Electrical Characteristics (Ta = 25°
°C)
°
°
|
5.5. rn1101f-1106f_ xa-b-c-d-e-f_sot490.pdf Size:147K _toshiba  |
 | RN1101F?RN1106F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101F,RN1102F,RN1103F
RN1104F,RN1105F,RN1106F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2101F~RN2106F
Equivalent Circuit And Bias Resister Values
Type No. R1 (k?) R2 (k?)
RN1101F 4.7 4.7
RN1102F 10 10
RN1103F 22 22
RN1104F 47 47
RN1105F 2.2 47
RN1106F 4.7 47
JEDEC ?
EIAJ ?
2-2H1A
TOSHIBA
Maximum Ratings (Ta = 25°C) Weight: 2.3 mg
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1101F~1106F
Collector-emitter voltage VCEO 50 V
RN1101F~1104F 10
Emitter-base voltage VEBO V
RN1105F, 1106F 5
Collector current IC 100 mA
Collector power dissipation PC 100 mW
RN1101F~1106F
Junction temperature Tj 150 °C
Storage temperature range Tstg -55~150 °C
000707EAA2
RN110 |
5.6. rn1107ct_rn1109ct_090413.pdf Size:151K _toshiba  |
 | RN1107CT ~ RN1109CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107CT,RN1108CT,RN1109CT
Switching Applications
Unit: mm
Inverter Circuit Applications
0.6±0.05
Interface Circuit Applications
0.5±0.03
Driver Circuit Applications
3
• Incorporating a bias resistor into a transistor reduces the number of
parts, which enable the manufacture of ever more compact
1 2
equipment and saves assembly cost.
• Complementary to RN2107CT to RN2109CT
0.35±0.02 0.05±0.03
0.15±0.03
Equivalent Circuit and Bias Resistor Values
C
Type No. R1 (k?) R2 (k?)
1.BASE
RN1107CT 10 47
R1
2.EMITTER
B
RN1108CT 22 47 CST3
3.COLLECTOR
RN1109CT 47 22
JEDEC ?
E
JEITA ?
TOSHIBA 2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
RN1107CT to RN1109CT
Collector-emitter voltage VCEO 20 V
RN1107CT 6
Emitter-base voltage RN1108C |
5.7. rn1101ft-1106ft_ xa-b-c-d-e-f_ sot623.pdf Size:211K _toshiba  |
 | RN1101FT~RN1106FT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101FT, RN1102FT, RN1103FT
RN1104FT, RN1105FT, RN1106FT
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications
• High-density mount is possible because of devices housed in very thin
TESM packages.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
• Wide range of resistor values are available to use in various circuit
designs.
• Complementary to RN2101FT~RN2106FT
Equivalent Circuit and Bias Resistor Values
C
Type No. R1 (k?) R2 (k?)
RN1101FT 4.7 4.7
R1
B
RN1102FT 10 10
JEDEC ?
RN1103FT 22 22
JEITA ?
RN1104FT 47 47
E
TOSHIBA 2-1B1A
RN1105FT 2.2 47
Weight:0.0022 g (typ.)
RN1106FT 4.7 47
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base |
5.8. rn1107act_rn1109act_090413.pdf Size:164K _toshiba  |
 | RN1107ACT ~ RN1109ACT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107ACT, RN1108ACT, RN1109ACT
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications
TOP View
0.6±0.05
• Extra small package(CST3) is applicable for extra high density 0.5±0.03
fabrication.
• Incorporating a bias resistor into a transistor reduces the number of parts,
3
which enables the manufacture of ever more compact equipment and
saves assembly cost.
• Complementary to RN2107ACT to RN2109ACT
1 2
0.35±0.02 0.05±0.03
Equivalent Circuit and Bias Resistor Values
0.15±0.03
C
Type No. R1 (k?) R2 (k?)
1.BASE
RN1107ACT 10 47
R1
2.EMITTER
B
RN1108ACT 22 47
CST3
3.COLLECTOR
RN1109ACT 47 22
JEDEC ?
E
JEITA ?
TOSHIBA 2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1107ACT to RN1109ACT
Colle |
5.9. rn1101fs-1106fs_ l0-1-2-3-4-5_sot823.pdf Size:98K _toshiba  |
 | RN1101FS~RN1106FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101FS,RN1102FS,RN1103FS
RN1104FS,RN1105FS,RN1106FS
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
1
• Complementary to RN2101FS~RN2106FS
3
2 0.8±0.05
Equivalent Circuit and Bias Resistor Values 0.1±0.05
1.0±0.05
C
Type No. R1 (k?) R2 (k?)
RN1101FS 4.7 4.7 0.1±0.05
R1
B
RN1102FS 10 10
1.BASE
fSM
2.EMITTER
RN1103FS 22 22
3.COLLECOTR
RN1104FS 47 47
E
RN1105FS 2.2 47
JEDEC ?
RN1106FS 4.7 47
JEITA ?
TOSHIBA 2-1E1A
Weight: 0.0006g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
RN1101FS~1106FS
Collector-emitter voltage VCEO 20 V
RN1101FS~1104FS 10
|
5.10. rn1101act_rn1106act_100311.pdf Size:168K _toshiba  |
 | RN1101ACT ~ RN1106ACT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101ACT,RN1102ACT,RN1103ACT
RN1104ACT,RN1105ACT,RN1106ACT
Switching Applications
Unit: mm
Inverter Circuit Applications
0.6±0.05
0.5±0.03
Interface Circuit Applications
Driver Circuit Applications
3
• Incorporating a bias resistor into a transistor reduces the number of parts,
1 2
which enables the manufacture of ever more compact equipment and
saves assembly cost.
• Complementary to RN2101ACT to RN2106ACT
0.35±0.02 0.05±0.03
0.15±0.03
Equivalent Circuit and Bias Resistor Values
C
Type No. R1 (k?) R2 (k?)
1.BASE
2. EMITTER
RN1101ACT 4.7 4.7
R1 CST3
3.COLLECTOR
B
RN1102ACT 10 10
RN1103ACT 22 22
JEDEC ?
RN1104ACT 47 47
JEITA ?
E
RN1105ACT 2.2 47
TOSHIBA 2-1J1A
RN1106ACT 4.7 47
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN |
5.11. rn1101-1106_ xa-b-c-d-e-f sot416.pdf Size:134K _toshiba  |
 | RN1101?RN1106
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101,RN1102,RN1103
RN1104,RN1105,RN1106
Switching, Inverter Circuit, Interface Circuit
Unit: mm
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2101~RN2106
Equivalent Circuit and Bias Resister Values
Type No. R1 (k?) R2 (k?)
RN1101 4.7 4.7
RN1102 10 10
RN1103 22 22
RN1104 47 47
RN1105 2.2 47
RN1106 4.7 47
JEDEC ?
EIAJ ?
TOSHIBA 2-2H1A
Weight: 2.4mg
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1101~1106
Collector-emitter voltage VCEO 50 V
RN1101~1104 10
Emitter-base voltage VEBO V
RN1105, 1106 5
Collector current IC 100 mA
Collector power dissipation PC 100 mW
RN1101~1106
Junction temperature Tj 150 °C
Storage temperature range Tstg -55~150 °C
RN1101?RN1106
Electrical Characteristics (Ta |
5.12. rn1101_rn1106_071101.pdf Size:566K _toshiba  |
 | RN1101?RN1106
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101, RN1102, RN1103,
RN1104, RN1105, RN1106
Switching, Inverter Circuit, Interface Circuit
Unit: mm
and Driver Circuit Applications
With built-in bias resistors
Simplified circuit design
Reduced number of parts and simplified manufacturing process
Complementary to RN2101~ RN2106
Equivalent Circuit and Bias Resister Values
Type No. R1 (k?) R2 (k?)
RN1101 4.7 4.7
RN1102 10 10
RN1103 22 22
RN1104 47 47
RN1105 2.2 47
RN1106 4.7 47
JEDEC ?
JEITA ?
TOSHIBA 2-2H1A
Weight: 2.4 mg (typ).
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1101~1106
Collector-emitter voltage VCEO 50 V
RN1101~1104 10
Emitter-base voltage VEBO V
RN1105, 1106 5
Collector current IC 100 mA
Collector power dissipation PC 100 mW
RN1101~1106
Junction temperature Tj 150 °C
Storage temperature range Tstg -55~150 °C
Note: Using c |
5.13. rn1107_rn1109_100406.pdf Size:339K _toshiba  |
 | RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107, RN1108, RN1109
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplified circuit design
Reduced number of parts and simplified manufacturing process
Complementary to RN2107 to 2109
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
RN1107 10 47
RN1108 22 47
RN1109 47 22
JEDEC ?
JEITA ?
TOSHIBA 2-2H1A
Weight: 2.4mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage RN1107 to 1109 VCBO 50 V
Collector-emitter voltage RN1107 to 1109 VCEO 50 V
RN1107 6
Emitter-base voltage RN1108 VEBO 7 V
RN1109 15
Collector current RN1107 to 1109 IC 100 mA
Collector power dissipation RN1107 to 1109 PC 100 mW
Junction temperature RN1107 to 1109 Tj 150 °C
Storage temperature range RN1107 to 1109 Tstg -55 to 150 °C
Note: Using continuo |
See also transistors datasheet: RN1102ACT
, RN1102CT
, RN1102FS
, RN1102MFV
, RN1102
, RN1103ACT
, RN1103CT
, RN1103FS
, 2N60B
, RN1103
, RN1104ACT
, RN1104CT
, RN1104FS
, RN1104MFV
, RN1104
, RN1105ACT
, RN1105CT
. Keywords| RN1103MFV
Datasheet | RN1103MFV
Datenblatt | RN1103MFV
RoHS | RN1103MFV
Distributor | | RN1103MFV
Application Notes | RN1103MFV
Component | RN1103MFV
Circuit | RN1103MFV
Schematic | | RN1103MFV
Equivalent | RN1103MFV
Cross Reference | RN1103MFV
Data Sheet | RN1103MFV
Fiche Technique |
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