RN1110 Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN1110

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN1110 transistor: SOT-416_SC-75_SSM

RN1110 Equivalent Transistors - Cross-Reference Search

RN1110 PDF document for downloads:

1.1. rn1110_rn1111_101228.pdf Size:311K _toshiba

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110, RN1111 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • With built-in bias resistors • Simplified circuit design • Reduced number of parts and simplified manufacturing process • Complementary to RN2110 and RN2111 Equivalent Circuit SSM Absolute Maximum Ratings (Ta = 25°C) JEDEC ? Characteristic Symbol Rating Unit JEITA ? TOSHIBA 2-2H1A Collector-base voltage VCBO 50 V Weight: 2.4mg (typ.) Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabi

1.2. rn1110f_rn1111f_071101.pdf Size:281K _toshiba

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characterisstic Symbol Rating Unit JEDEC ? Collector-base voltage VCBO 50 V JEITA ? Collector-emitter voltage VCEO 50 V TOSHIBA 2-2HA1A Emitter-base voltage VEBO 5 V Weight: 2.3 mg (typ.) Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditi

1.3. rn1110_rn1111_ sot416.pdf Size:106K _toshiba

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110~RN2111 Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC ? EIAJ ? Characterisstic Symbol Rating Unit TOSHIBA 2-2H1A Weight: 2.4mg Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = 50V, IE = 0 ? ? 0.1 µA Emitter cut-off current IEBO ? VEB = 5V, IC = 0 ? ? 0.1 µA DC current gain hFE ? VCE = 5V, IC = 1mA 12

1.4. rn1110fs_rn1111fs.pdf Size:130K _toshiba

RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm JEDEC ? • Incorporating a bias resistor into a transistor reduces parts count. JEITA ? Reducing the parts count enables the manufacture of ever more TOSHIBA 2-1E1A compact equipment and lowers assembly cost. 1 Weight: 0.0006 g (typ.) • Complementary to RN2110FS, RN2111FS 3 2 0.8±0.05 Equivalent Circuit and Bias Resistor Values 0.1±0.05 1.0±0.05 0.1±0.05 1.BASE 2.EMITTER fSM 3.COLLECOTR Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under he

1.5. rn1110ft_rn1111ft_.pdf Size:121K _toshiba

RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Wide range of resistor values are available to use in various circuit designs. • Complementary to RN2110FT, RN2111FT Equivalent Circuit and Bias Resistor Values C R1 B JEDEC ? JEITA ? E TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 100 mW Junction te

1.6. rn1110ct_rn1111ct_090413.pdf Size:154K _toshiba

RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Unit: mm Inverter Circuit Applications 0.6±0.05 Interface Circuit Applications 0.5±0.03 Driver Circuit Applications 3 • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more 1 2 compact equipment and save assembly cost. • Complementary to RN2110CT, RN2111CT 0.35±0.02 0.05±0.03 0.15±0.03 Equivalent Circuit C 1.BASE R1 2.EMITTER B CST3 3.COLLECOTR JEDEC ? E JEITA ? TOSHIBA 2-1J1A Absolute Maximum Ratings (Ta = 25°C) Weight:0.75 mg (typ.) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 t

1.7. rn1110f_rn1111f_ sot490.pdf Size:105K _toshiba

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC ? Characterisstic Symbol Rating Unit EIAJ ? TOSHIBA 2-2HA1A Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = 50V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO ? VEB = 5V, IC = 0 ? ? 100 nA DC current gain hFE VCE = 5V, IC = 1mA 120 ? 700

1.8. rn1110mfv_rn1111mfv.pdf Size:321K _toshiba

RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit: mm 1.2 ± 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 ± 0.05 Ultra-small package, suited to very high density mounting 1 Incorporating a bias resistor into the transistor reduces the number of parts, so 1 enabling the manufacture of ever more compact equipment and lowering assembly cost. 3 A wide range of resistor values is available for use in various circuits. 2 Complementary to the RN2110MFV,RN2111MFV Equivalent Circuit 1. BASE 2. EMITTER VESM 3. COLLECTOR JEDEC ? JEITA ? TOSHIBA 2-1L1A Absolute Maximum Ratings (Ta = 25°C) Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC (Note

See also transistors datasheet: RN1109CT , RN1109FS , RN1109MFV , RN1109 , RN1110ACT , RN1110CT , RN1110FS , RN1110MFV , BC547 , RN1111ACT , RN1111CT , RN1111FS , RN1111F , RN1111MFV , RN1111 , RN1112ACT , RN1112CT .

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