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RN1112ACT Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN1112ACT

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN1112ACT transistor: SOT-883_CST3

RN1112ACT Equivalent Transistors - Cross-Reference Search

RN1112ACT PDF document for downloads:

1.1. rn1112act_rn1113act_090413.pdf Size:154K _toshiba

RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications • Unit: mm Inverter Circuit Applications 0.6±0.05 Interface Circuit Applications 0.5±0.03 Driver Circuit Applications 3 • Incorporating a bias resistor into a transistor reduces the number of parts, which enables the manufacture of ever more compact equipment and 1 2 saves assembly cost. • Complementary to RN2112ACT, RN2113ACT 0.35±0.02 0.05±0.03 0.15±0.03 Equivalent Circuit and Bias Resistor Values 1.BASE 2.EMITTER CST3 3.COLLECOTR JEDEC ? Absolute Maximum Ratings (Ta = 25°C) JEITA ? Characteristics Symbol Rating Unit TOSHIBA 2-1J1A Weight:0.75 mg (typ.) Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 80 mA Collector power dissipation PC (Note1) 100 mW Junction temperature Tj 150 °C Storage temperature

4.1. rn1112f_rn1113f.pdf Size:106K _toshiba

RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25° °C) ° ° Characterisstic Symbol Rating Unit JEDEC ? EIAJ ? Collector-base voltage VCBO 50 V TOSHIBA 2-2HA1A Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C Electrical Characteristics (Ta = 25° °C) ° ° Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = 50V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO ? VEB = 5V, IC = 0 ? ? 100 nA DC current gain hFE ? VCE =

4.2. rn1112_rn1113.pdf Size:108K _toshiba

RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112,RN1113 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112, RN2113 Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Symbol Rating Unit Collector-base voltage VCBO 50 V JEDEC ? Collector-emitter voltage VCEO 50 V EIAJ ? Emitter-base voltage VEBO 5 V TOSHIBA 2-2H1A Weight: 2.4mg Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = 50V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO ? VEB = 5V, IC = 0 ? ? 100 nA DC current gain hFE ? VCE = 5V, IC = 1mA 1

4.3. rn1112_rn1113_100307.pdf Size:272K _toshiba

RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112, RN1113 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified process Complementary to RN2112 and RN2113 Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V JEDEC ? Collector-emitter voltage VCEO 50 V JEITA ? Emitter-base voltage VEBO 5 V TOSHIBA 2-2H1A Weight: 2.4mg (typ.) Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (

4.4. rn1112mfv_rn1113mfv.pdf Size:286K _toshiba

RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV Unit: mm Switching, Inverter Circuit, Interface Circuit and 1.2 ± 0.05 Driver Circuit Applications 0.80 ± 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and 3 lowering assembly cost. 2 A wide range of resistor values is available for use in various circuits. Complementary to the RN2112MFV to RN2113MFV Equivalent Circuit 1. BASE 2. EMITTER VESM 3. COLLECTOR JEDEC ? JEITA ? Absolute Maximum Ratings (Ta = 25°C) TOSHIBA 2-1L1A Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC (Note

4.5. rn1112fs_rn1113fs.pdf Size:130K _toshiba

RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN2112FS, RN2113FS 1 3 Equivalent Circuit and Bias Resistor Values 2 0.8±0.05 0.1±0.05 1.0±0.05 0.1±0.05 1.BASE 2.EMITTER Absolute Maximum Ratings (Ta = 25°C) fSM 3.COLLECOTR JEDEC ? Characteristics Symbol Rating Unit JEITA ? Collector-base voltage VCBO 20 V TOSHIBA 2-1E1A Collector-emitter voltage VCEO 20 V Weight: 0.0006 g (typ.) Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously unde

4.6. rn1112ct_rn1113ct_090413.pdf Size:154K _toshiba

RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Unit: mm Inverter Circuit Applications 0.6±0.05 Interface Circuit Applications 0.5±0.03 Driver Circuit Applications 3 • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more 1 2 compact equipment and save assembly cost. • Complementary to RN2112CT, RN2113CT 0.35±0.02 0.05±0.03 0.15±0.03 Equivalent Circuit 1.BASE 2.EMITTER CST3 3.COLLECOTR JEDEC ? JEITA ? TOSHIBA 2-1J1A Absolute Maximum Ratings (Ta = 25°C) Weight: 0.75 mg (typ.) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note:

4.7. rn1112ft_rn1113ft.pdf Size:124K _toshiba

RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Wide range of resistor values are available to use in various circuit designs. • Complementary to RN2112FT, RN2113FT Equivalent Circuit and Bias Resistor Values C R1 B JEDEC ? JEITA ? TOSHIBA 2-1B1A E Weight: 0.0022 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector poser dissipation PC 100 mW Junction te

See also transistors datasheet: RN1110MFV , RN1110 , RN1111ACT , RN1111CT , RN1111FS , RN1111F , RN1111MFV , RN1111 , BU808DFI , RN1112CT , RN1112FS , RN1112MFV , RN1112 , RN1113ACT , RN1113CT , RN1113FS , RN1113MFV .

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