RN1310 Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN1310

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN1310 transistor: SOT-323_SC-70_USM

RN1310 Equivalent Transistors - Cross-Reference Search

RN1310 PDF document for downloads:

1.1. rn1310_rn1311.pdf Size:261K _toshiba

RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2310 and RN2311 Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) USM JEDEC ? Characterisstic Symbol Rating Unit JEITA SC-70 TOSHIBA 2-2E1A Collector-base voltage VCBO 50 V Weight: 6 mg (typ.) Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability si

5.1. rn1314-rn1318.pdf Size:159K _toshiba

RN1314?RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314~RN2318 Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN1314 1 10 RN1315 2.2 10 RN1316 4.7 10 RN1317 10 4.7 RN1318 47 10 JEDEC ? EIAJ SC-70 TOSHIBA 2-2E1A Weight: 0.006g Maximum Ratings (Ta = 25° °C) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1314~1318 Collector-emitter voltage VCEO 50 V RN1314 5 RN1315 6 Emitter-base voltage RN1316 VEBO 7 V RN1317 15 RN1318 25 Collector current IC 100 mA Collector power dissipation PC 100 mW RN1314~1318 Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C RN1314?RN1318 Electrical Character

5.2. rn1314_rn1315_rn1316_rn1317_rn1318.pdf Size:455K _toshiba

RN1314?RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314~RN2318 Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN1314 1 10 RN1315 2.2 10 RN1316 4.7 10 RN1317 10 4.7 RN1318 47 10 JEDEC ? JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1314~1318 Collector-emitter voltage VCEO 50 V RN1314 5 RN1315 6 Emitter-base voltage RN1316 VEBO 7 V RN1317 15 RN1318 25 Collector current IC 100 mA Collector power dissipation PC 100 mW RN1314~1318 Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under

5.3. rn1312_rn1313.pdf Size:287K _toshiba

RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2312, RN2313 Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V JEDEC ? Collector-emitter voltage VCEO 50 V JEITA SC-70 Emitter-base voltage VEBO 5 V TOSHIBA 2-2E1A Collector current IC 100 mA Weight: 0.006g (typ.) Base current IB 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if th

See also transistors datasheet: RN1302 , RN1303 , RN1304 , RN1305 , RN1306 , RN1307 , RN1308 , RN1309 , BC109C , RN1311 , RN1312 , RN1313 , RN1314 , RN1315 , RN1316 , RN1317 , RN1318 .

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