RN1427 Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN1427

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN1427 transistor: SOT-346_SC-59_S-Mini

RN1427 Equivalent Transistors - Cross-Reference Search

RN1427 PDF document for downloads:

1.1. rn1421_rn1427_100820.pdf Size:552K _toshiba

RN1421?RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications High current type (IC (max) = 800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Low VCE (sat) Complementary to RN2421 to RN2427 Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN1421 1 1 RN1422 2.2 2.2 RN1423 4.7 4.7 S-Mini RN1424 10 10 JEDEC TO-236MOD RN1425 0.47 10 JEITA SC-59 RN1426 1 10 TOSHIBA 2-3F1A RN1427 2.2 10 Weight: 12 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1421 to 1427 Collector-emitter voltage VCEO 50 V RN1421 to 1424 10 Emitter-base voltage RN1425, 1426 VEBO 5 V RN1427 6 Collector current IC 800 mA Colle

See also transistors datasheet: RN1417 , RN1418 , RN1421 , RN1422 , RN1423 , RN1424 , RN1425 , RN1426 , AD149 , RN1441 , RN1442 , RN1443 , RN1444 , RN1501 , RN1502 , RN1503 , RN1504 .

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