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RN1701JE Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN1701JE

Material of transistor: Si

Polarity: NPN*NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN1701JE transistor: SOT-553_ESV

RN1701JE Equivalent Transistors - Cross-Reference Search

RN1701JE PDF document for downloads:

1.1. rn1701je-rn1706je.pdf Size:314K _toshiba

RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values is available for use in various circuit designs. • Complementary to RN2701JE~RN2706JE Equivalent Circuit and Bias Resistor Values 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) C 4.COLLECTOR2 (C2) Type No. R1 (k?) R2 (k?) 5.COLLECTOR1 (C1) RN1701JE 4.7 4.7 R1 B RN1702JE 10 10 JEDEC ? RN1703JE 22 22 JEITA ? RN1704JE 47 47 E TOSHIBA 2-2P1D RN1705JE 2.2 47 Weight: 0.003 g (typ.) RN1706JE 4.7 4

4.1. rn1701-rn1706.pdf Size:141K _toshiba

RN1701~RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1701,RN1702,RN1703 RN1704,RN1705,RN1706 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2701~RN2706 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1701 4.7 4.7 RN1702 10 10 RN1703 22 22 RN1704 47 47 JEDEC ? RN1705 2.2 47 EIAJ ? RN1706 4.7 47 TOSHIBA 2-2L1A Weight: 6.2mg Equivalent Circuit (Top View) Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1701~1706 Collector-emitter voltage VCEO 50 V RN1701~1704 10 Emitter-base voltage VEBO V RN1705, 1706 5 Collector current Ic 100 mA Collector power dissipation Pc* 200 mW RN1701~1706

5.1. rn1707je-rn1709je.pdf Size:197K _toshiba

RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1707JE,RN1708JE,RN1709JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values is available to use in various circuit designs. • Complementary to RN2707JE~RN2709JE Equivalent Circuit and Bias Resistor Values 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) C Type No. R1 (k?) R2 (k?) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) RN1707JE 10 47 R1 B RN1708JE 22 47 JEDEC ? RN1709JE 47 22 JEITA ? E TOSHIBA 2-2P1D Weight:0.003g (typ.) Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 common) (top view) C

5.2. rn1707-rn1709.pdf Size:132K _toshiba

RN1707~RN1709 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1707,RN1708,RN1709 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2707~RN2709 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1707 10 47 RN1708 22 47 RN1709 47 22 JEDEC ? EIAJ ? TOSHIBA 2-2L1A Weight: 0.014g Equivalent Circuit (Top View) Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1707~1709 Collector-emitter voltage VCEO 50 V RN1707 6 Emitter-base voltage RN1708 VEBO 7 V RN1709 15 Collector current Ic 100 mA Collector power dissipation Pc* 200 mW RN1707~1709 Junction temperature Tj 150 C Storage temperature range Tstg

See also transistors datasheet: RN1606 , RN1607 , RN1608 , RN1609 , RN1610 , RN1611 , RN1673 , RN16J1 , 9014 , RN1701 , RN1702JE , RN1702 , RN1703JE , RN1703 , RN1704JE , RN1704 , RN1705JE .

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