RN1966CT Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN1966CT

Material of transistor: Si

Polarity: NPN*NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN1966CT transistor: CST6

RN1966CT Equivalent Transistors - Cross-Reference Search

RN1966CT PDF document for downloads:

1.1. rn1961ct_rn1966ct_090414.pdf Size:191K _toshiba

RN1961CT~RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit: mm Inverter Circuit Applications 1.0±0.05 0.15±0.03 Interface Circuit Applications Driver Circuit Applications 6 5 4 • Two devices are incorporated into a fine pitch Small Mold (6 pin) 1 2 3 package. • Incorporating a bias resistor into a transistor reduces parts count. 0.35±0.02 0.35±0.02 0.075±0.03 0.7±0.03 Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN2961CT to RN2966CT Equivalent Circuit and Bias Resistor Values (E1) 1.EMITTER1 (E2) 2.EMITTER2 (B2) 3.BASE2 C (C2) 4.COLLECTOR2 Type No. R1 (k?) R2 (k?) (B1) 5.BASE1 6.COLLECTOR1(C1) CST6 RN1961CT 4.7 4.7 R1 B RN1962CT 10 10 JEDEC ? RN1963CT 22 22 JEITA ? RN1964CT 47 47 TOSHIBA 2-1K1A E RN19

4.1. rn1961fs_rn1962fs_rn1963fs_rn1964fs_rn1965fs_rn1966fs.pdf Size:130K _toshiba

RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 • Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 • Incorporating a bias resistor into a transistor reduces parts count. 5 2 Reducing the parts count enable the manufacture of ever more 4 compact equipment and save assembly cost. 3 • Complementary to RN2961FS~RN2966FS Equivalent Circuit and Bias Resistor Values (E1) 1.EMIITTER1 C (E2) 2.EMITTER2 Type No. R1 (k?) R2 (k?) (B2) 3.BASE2 (C2) 4.COLLECTOR2 RN1961FS 4.7 4.7 (B1) 5.BASE1 R1 (C1) 6.COLLECTOR1 fS6 B RN1962FS 10 10 RN1963FS 22 22 JEDEC ? RN1964FS 47 47 E JEITA ? RN1965FS 2.2 47 TOSHIBA 2-1F1C RN1966FS 4.7 47 Weight: 0.001 g (typ.)

4.2. rn1961fe-rn1966fe.pdf Size:193K _toshiba

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN2961FE~RN2966FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN1961FE 4.7 4.7 R1 B RN1962FE 10 10 RN1963FE 22 22 RN1964FE 47 47 JEDEC ? E RN1965FE 2.2 47 JEITA ? RN1966FE 4.7 47 TOSHIBA 2-2N1A Weight: 0.003 g (typ.) Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 common) (top view) Characteristics Symbol Rating Unit 6 5 4 Collector-base voltage VCBO 50 V RN1961FE~ 1966FE Q2

4.3. rn1961fe_rn1966fe_100520.pdf Size:544K _toshiba

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN2961FE to RN2966FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN1961FE 4.7 4.7 R1 B RN1962FE 10 10 RN1963FE 22 22 RN1964FE 47 47 JEDEC ? E RN1965FE 2.2 47 JEITA ? RN1966FE 4.7 47 TOSHIBA 2-2N1A Weight: 3mg (typ.) Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) (top view) (Q1, Q2 common) 6 5 4 Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Q2 RN1961FE Q

4.4. rn1961-rn1966.pdf Size:143K _toshiba

RN1961~RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1961,RN1962,RN1963 RN1964,RN1965,RN1966 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process • Complementary to RN2961~RN2966 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1961 4.7 4.7 RN1962 10 10 RN1963 22 22 RN1964 47 47 JEDEC ? RN1965 2.2 47 EIAJ ? RN1966 4.7 47 TOSHIBA 2-2J1B Weight: 6.8mg Equivalent Circuit (Top View) Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1961~1966 Collector-emitter voltage VCEO 50 V RN1961~1964 10 Emitter-base voltage VEBO V RN1965, 1966 5 Collector current IC 100 mA Collector power dissipation PC* 200 mW RN1961~1966

See also transistors datasheet: RN1964CT , RN1964FE , RN1964FS , RN1964 , RN1965CT , RN1965FE , RN1965FS , RN1965 , BU808DFI , RN1966FE , RN1966FS , RN1966 , RN1967CT , RN1967FE , RN1967FS , RN1967 , RN1968CT .

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