RN1969CT Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN1969CT

Material of transistor: Si

Polarity: NPN*NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN1969CT transistor: CST6

RN1969CT Equivalent Transistors - Cross-Reference Search

RN1969CT PDF document for downloads:

4.1. rn1967fs_rn1968fs_rn1969fs.pdf Size:107K _toshiba

RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 • Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.8±0.05 0.1±0.05 0.1±0.05 package. • Incorporating a bias resistor into a transistor reduces parts count. 1 6 Reducing the parts count enable the manufacture of ever more 5 2 compact equipment and save assembly cost. • Complementary to RN2967FS~RN2969FS 4 3 Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) (E1) 1.EMIITTER1 (E2) 2.EMITTER2 R1 RN1967FS 10 47 B (B2) 3.BASE2 (C2) 4.COLLECTOR2 RN1968FS 22 47 (B1) 5.BASE1 E RN1969FS 47 22 fS6 (C1) 6.COLLECTOR1 JEDEC ? JEITA ? TOSHIBA 2-1F1C Weight: 0.001 g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit (top vi

4.2. rn1967fe-rn1969fe.pdf Size:147K _toshiba

RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN2967FE~RN2969FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN1967FE 10 47 R1 B RN1968FE 22 47 RN1969FE 47 22 JEDEC ? E JEITA ? TOSHIBA 2-2N1A Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Weight: 0.003 g (typ.) Equivalent Circuit Characteristics Symbol Rating Unit (top view) Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V RN1967FE 6 6 5 4 Emitter-base voltage RN1968FE VEBO 7 V RN1969FE 15 Q

4.3. rn1967-rn1969.pdf Size:136K _toshiba

RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2967~RN2969 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1967 10 47 RN1968 22 47 RN1969 47 22 JEDEC ? EIAJ ? TOSHIBA 2-2J1B Weight: 6.8mg Equivalent Circuit (Top View) Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage RN1967~1969 VCBO 50 V Collector-emitter voltage RN1967~1969 VCEO 50 V RN1967 6 Emitter-base voltage RN1968 VEBO 7 V RN1969 15 Collector current RN1967~1969 IC 100 mA Collector power dissipation RN1967~1969 PC* 200 mW Junction temperature RN1967~1969 Tj 150 C Stora

See also transistors datasheet: RN1967CT , RN1967FE , RN1967FS , RN1967 , RN1968CT , RN1968FE , RN1968FS , RN1968 , BC549 , RN1969FE , RN1969FS , RN1969 , RN1970CT , RN1970FE , RN1970FS , RN1970 , RN1971CT .

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