RN2315 Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN2315

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN2315 transistor: SOT-323_SC-70_USM

RN2315 Equivalent Transistors - Cross-Reference Search

RN2315 PDF document for downloads:

1.1. rn2314_rn2315_rn2316_rn2317_rn2318.pdf Size:463K _toshiba

RN2314~RN2318 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2314,RN2315,RN2316,RN2317,RN2318 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1314~RN1318 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN2314 1 10 RN2315 2.2 10 RN2316 4.7 10 RN2317 10 4.7 JEDEC ? RN2318 47 10 JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V RN2314~2318 Collector-emitter voltage VCEO -50 V RN2314 -5 RN2315 -6 Emitter-base voltage RN2316 VEBO -7 V RN2317 -15 RN2318 -25 Collector current IC -100 mA Collector power dissipation PC 100 mW RN2314~2318 Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using contin

5.1. rn2312-rn2313.pdf Size:106K _toshiba

RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1312, RN1313 Equivalent Circuit Maximum Ratings (Ta = 25° °C) ° ° Characterisstic Symbol Rating Unit JEDEC ? EIAJ SC-70 Collector-base voltage VCBO -50 V TOSHIBA 2-2E1A Collector-emitter voltage VCEO -50 V Weight: 0.006g Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C Electrical Characteristics (Ta = 25° °C) ° ° Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB =-50V, IE =0 ? ? -100 nA Emitter cut-off current IEBO ? VEB = -5V, IC = 0 ? ? -100 nA DC curre

5.2. rn2310-rn2311.pdf Size:103K _toshiba

RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2310,RN2311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1310, RN1311 Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC ? EIAJ SC-70 Characterisstic Symbol Rating Unit TOSHIBA 2-2E1A Weight: 0.006g Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = -50V, IE = 0 ? ? -100 nA Emitter cut-off current IEBO ? VEB = -5V, IC = 0 ? ? -100 nA DC current gain hFE ? VCE =

See also transistors datasheet: RN2307 , RN2308 , RN2309 , RN2310 , RN2311 , RN2312 , RN2313 , RN2314 , 2N5551 , RN2316 , RN2317 , RN2318 , RN2321A , RN2322A , RN2323A , RN2324A , RN2325A .

Keywords