RN2327A Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN2327A

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN2327A transistor: SOT-323_SC-70_USM

RN2327A Equivalent Transistors - Cross-Reference Search

RN2327A PDF document for downloads:

1.1. rn2321a_rn2327a_071101.pdf Size:191K _toshiba

RN2321A?RN2327A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2321A,RN2322A,RN2323A,RN2324A RN2325A,RN2326A,RN2327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current driving is possible. Since bias resisters are built in the transistor, the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of an assembly are possible. Many kinds of resistance value are lined up in order to support various kinds of circuit design. Complementary to RN1321A~RN1327A Low VCE(sat) enable to be low power dissipation on high current driving. Equivalent Circuit And Bias Resistance Values Type No. R1 (k?) R2 (k?) RN2321A 1 1 1.BASE 2.EMITTER RN2322A 2.2 2.2 3.COLLECTOR RN2323A 4.7 4.7 RN2324A 10 10 JEDEC ? RN2325A 0.47 10 JEITA SC-70SCSC RN2326A 1 10 TOSHIBA 2-2E1A RN2327A 2.2 10 Weight: 0.006 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Charac

See also transistors datasheet: RN2317 , RN2318 , RN2321A , RN2322A , RN2323A , RN2324A , RN2325A , RN2326A , 2N2907 , RN2401 , RN2402 , RN2403 , RN2404 , RN2405 , RN2406 , RN2407 , RN2408 .

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