RN2611 Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN2611

Material of transistor: Si

Polarity: PNP*PNP

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN2611 transistor: SOT26_SC-74_SM6

RN2611 Equivalent Transistors - Cross-Reference Search

RN2611 PDF document for downloads:

1.1. rn2610_rn2611.pdf Size:115K _toshiba

RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including twodevices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1610~RN1611 Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 common) JEDEC ? Characteristic Symbol Rating Unit EIAJ ? TOSHIBA 2-3N1A Collector-base voltage VCBO -50 V Weight: 0.015g Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC* 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C * Total rating Equivalent Circuit (Top View) 1 2001-06-05 RN2610,RN2611 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Test Characteristic Symbol Test Condition Min Typ.

See also transistors datasheet: RN2602 , RN2603 , RN2604 , RN2605 , RN2606 , RN2607 , RN2608 , RN2610 , BC237 , RN2701JE , RN2701 , RN2702JE , RN2702 , RN2703JE , RN2703 , RN2704JE , RN2704 .

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