RN2905 Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN2905

Material of transistor: Si

Polarity: PNP*PNP

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN2905 transistor: SOT-363_SC-88_US6

RN2905 Equivalent Transistors - Cross-Reference Search

RN2905 PDF document for downloads:

5.1. rn2907fs_rn2909fs_100708.pdf Size:162K _toshiba

RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications. 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 • Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 • Incorporating a bias resistor into a transistor reduces parts count. 5 2 Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. 4 3 • Complementary to RN1907FS to RN1909FS Equivalent Circuit and Bias Resistor Values C 1.EMITTER1 (E1) 1.EMIITTER1 (E1) Type No. R1 (k?) R2 (k?) 2.BASE1 (B1) 2.EMITTER2 (E2) 3.COLLECTOR2 (C2) 3.BASE2 (B2) 4.EMITTER2 (E2) RN2907FS 10 47 4.COLLECTOR2 (C2) R1 5.BASE2 (B2) 5.BASE1 (B2) B RN2908FS 22 47 6.COLLECTOR1 (C1) fS6 fS6 6.COLLECTOR1 (C1) RN2909FS 47 22 JEDEC ? E JEITA ? TOSHIBA 2-1F1D

5.2. rn2907fe_rn2909fe_071101.pdf Size:332K _toshiba

RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2907FE,RN2908FE,RN2909FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN1907FE~RN1909FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN2907FE 10 47 R1 B RN2908FE 22 47 RN2909FE 47 22 JEDEC ? E JEITA ? TOSHIBA 2-2N1G Weight: 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit Characteristics Symbol Rating Unit (top view) Collector-base voltage VCBO -50 V 6 5 4 RN2907FE~ RN2909FE Collector-emitter voltage VCEO -50 V RN2907FE -6 Q2 Q1 Emitter-base

5.3. rn2901fs_rn2906fs_071101.pdf Size:170K _toshiba

RN2901FS~RN2906FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2901FS,RN2902FS,RN2903FS RN2904FS,RN2905FS,RN2906FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 • Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more 5 2 compact equipment and lowers assembly cost. 4 3 • Complementary to RN1901FS~RN1906FS Equivalent Circuit and Bias Resistor Values 1.EMITTER1 (E1) 2.BASE1 (B1) 3.COLLECTOR2 (C2) C 4.EMITTER2 (E2) Type No. R1 (k?) R2 (k?) 5.BASE2 (B2) 6.COLLECTOR1 (C1) RN2901FS 4.7 4.7 fS6 R1 B RN2902FS 10 10 JEDEC ? RN2903FS 22 22 JEITA ? RN2904FS 47 47 E TOSHIBA 2-1F1D RN2905FS 2.2 47 RN2906FS 4.7 47 Weight: 0.001g (typ.) Absolute Ma

5.4. rn2901afs_rn2906afs_100514.pdf Size:171K _toshiba

RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 • Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces the parts count. 1 6 Reducing the parts count enables the manufacture of ever more 5 2 compact equipment and saves assembly cost. • Complementary to the RN1901AFS to RN1906AFS 4 3 Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) (E1) 1.EMITTER1 (B1) 2.BASE1 RN2901AFS 4.7 4.7 (C2) R1 3.COLLECTOR2 B (E2) RN2902AFS 10 10 4.EMITTER2 (B2) 5.BASE2 RN2903AFS 22 22 (C1) 6.COLLECTOR1 fS6 RN2904AFS 47 47 JEDEC ? E RN2905AFS 2.2 47 JEITA ? RN2906AFS 4.7 47 TOSHI

5.5. rn2901_rn2906_100709.pdf Size:575K _toshiba

RN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901,RN2902,RN2903,RN2904,RN2905,RN2906 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1901 to RN1906 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN2901 4.7 4.7 RN2902 10 10 RN2903 22 22 US6 RN2904 47 47 RN2905 2.2 47 JEDEC ? JEITA ? RN2906 4.7 47 TOSHIBA 2-2J1A Weight: 6.8 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Equivalent Circuit (Top View) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V RN2901 to 2906 Collector-emitter voltage VCEO -50 V RN2901 to 2904 -10 Emitter-base voltage VEBO V RN2905, 2906 -5 Collector cu

5.6. rn2907afs_rn2909afs_100514.pdf Size:165K _toshiba

RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2907AFS, RN2908AFS, RN2909AFS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 • Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 • Incorporating a bias resistor into a transistor reduces the parts count. 5 2 Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly costs. 4 3 • Complementary to the RN1907AFS to RN1909AFS Equivalent Circuit and Bias Resistor Values C (E1) 1. EMITTER1 Type No. R1 (k?) R2 (k?) (B1) 2. BASE1 (C2) 3. COLLECTOR2 RN2907AFS 10 47 (E2) 4. EMITTER2 R1 (B2) 5. BASE2 RN2908AFS 22 47 B (C1) 6. COLLECTOR1 fS6 RN2909AFS 47 22 JEDEC ? E JEITA ? TOSHIBA 2-1F1D Weight: 1 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 com

5.7. rn2901fe_rn2906fe_071101.pdf Size:554K _toshiba

RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN1901FE~RN1906FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN2901FE 4.7 4.7 R1 RN2902FE 10 10 B RN2903FE 22 22 JEDEC ? RN2904FE 47 47 E JEITA ? RN2905FE 2.2 47 TOSHIBA 2-2N1G RN2906FE 4.7 47 Weight:0.003 g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit (top view) Characteristics Symbol Rating Unit 6 5 4 Collector-base voltage VCBO -50 V RN2901FE~

5.8. rn2907_rn2909_071101.pdf Size:288K _toshiba

RN2907~RN2909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2907,RN2908,RN2909 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1907~1909 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) JEDEC ? JEITA ? RN2907 10 47 TOSHIBA 2-2J1A RN2908 22 47 Weight: 6.8 mg(typ.) RN2909 47 22 Equivalent Circuit (Top View) 1 2007-11-01 RN2907~RN2909 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V RN2907~2909 Collector-emitter voltage VCEO -50 V RN2907 -6 Emitter-base voltage RN2908 VEBO -7 V RN2909 -15 Collector current IC -100 mA Collector power dissipation PC* 200 mW RN2907~2909 Junction t

See also transistors datasheet: RN2903 , RN2904AFS , RN2904FE , RN2904FS , RN2904 , RN2905AFS , RN2905FE , RN2905FS , TIP41C , RN2906AFS , RN2906FE , RN2906FS , RN2906 , RN2907AFS , RN2907FE , RN2907FS , RN2907 .

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