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RN47A5 Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN47A5

Material of transistor: Si

Polarity: NPN*PNP

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN47A5 transistor: SOT-353_SC-88A_USV

RN47A5 Equivalent Transistors - Cross-Reference Search

RN47A5 PDF document for downloads:

1.1. rn47a5je_071101.pdf Size:266K _toshiba

RN47A5JE TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A5JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 1.EMITTER1 (E1) 2.BASE1 (B1) 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) C C 5.COLLECTOR1 (C1) BASE2 (B2) R1 R1 B B JEDEC ? JEITA ? E E TOSHIBA 2-2P1E Q1 Weight: 0.003g (typ.) R1: 47 k?, R2: 47 k? Q2 R1: 4.7 k?, R2: 10 k? Q1: RN1104F Q2: RN2116F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 5 Q1 1 2 3 1 2 3 1 2007-11-01 R2 R2 RN47A5JE Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Co

1.2. rn47a5.pdf Size:107K _toshiba

RN47A5 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A5 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 B B JEDEC ? JEITA ? E E TOSHIBA 2-2L1D Q1 Weight:0.0062g (typ.) R1: 47 k?, R2: 47 k? Q2 R1: 4.7 k?, R2: 10 k? Q1: RN1104F Q2: RN2116F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 5 Q1 1 2 3 1 2 3 1 2004-04-28 R2 R2 RN47A5 Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V Collector current

5.1. rn47a4je_071101.pdf Size:289K _toshiba

RN47A4JE TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A4JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 1.EMITTER1 (E1) 2.BASE1 (B1) C C 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) BASE2 (B2) R1 R1 B B JEDEC ? JEITA ? E E TOSHIBA 2-2P1E Q1 Weight: 0.003g (typ.) R1: 47 k?, R2: 47 k? Q2 R1: 10 k?, R2: 47 k? Q1: RN1104F Q2: RN2107F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 4 Q1 1 2 3 1 2 3 1 2007-11-01 R2 R2 RN47A4JE Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit

5.2. rn47a3.pdf Size:107K _toshiba

RN47A3 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A3 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 B B JEDEC ? E E JEITA ? R1: 10 k? (Q1, Q2 common) TOSHIBA 2-2L1D R2: 10 k? (Q1, Q2 common) Weight: 0.0062g (typ.) Q1: RN1102F Q2: RN2102F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 3 Q1 1 2 3 1 2 3 1 2004-04-28 R2 R2 RN47A3 Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V Collector current

5.3. rn47a3je_071101.pdf Size:286K _toshiba

RN47A3JE TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A3JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 1.EMITTER1 (E1) 2.BASE1 (B1) C C 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) BASE2 (B2) R1 R1 B B JEDEC ? JEITA ? E E TOSHIBA 2-2P1E R1: 10 k? (Q1, Q2 common) Weight: 0.003g (typ.) R2: 10 k? (Q1, Q2 common) Q1: RN1102F Q2: RN2102F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 3 Q1 1 2 3 1 2 3 1 2007-11-01 R2 R2 RN47A3JE Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit

5.4. rn47a1.pdf Size:105K _toshiba

RN47A1 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 B B E E JEDEC ? R1: 4.7 k? (Q1, Q2 common) JEITA ? Q1: RN1110F TOSHIBA 2-2L1D Q2: RN2110F Weight:0.0062g (typ.) Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 1 Q1 1 2 3 1 2 3 1 2004-04-28 RN47A1 Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Maximum Ratings (Ta = 25°C)

5.5. rn47a1je_071101.pdf Size:291K _toshiba

RN47A1JE TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A1JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin) • package. • Incorporating a bias resistor into a transistor reduces parts count. • Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 1.EMITTER1 (E1) 2.BASE1 (B1) C C 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) BASE2 (B2) R1 R1 B B JEDEC ? E E JEITA ? R1: 4.7 k? (Q1, Q2 common) TOSHIBA 2-2P1E Q1: RN1110F Weight: 0.003g (typ.) Q2: RN2110F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 1 Q1 1 2 3 1 2 3 1 2007-11-01 RN47A1JE Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO

5.6. rn47a6_071101.pdf Size:139K _toshiba

RN47A6 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 JEDEC ? B B JEITA ? TOSHIBA 2-2L1D Weight: 0.0062g (typ.) E E Q1 R1: 100 k?, R2: 100 k? Q2 R1: 100 k?, R2: 100 k? Q1: RN1130F Q2: RN2130F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 5 6 Q1 1 2 3 1 2 3 1 2007-11-01 R2 R2 RN47A6 Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V

5.7. rn47a7je_090423.pdf Size:222K _toshiba

RN47A7JE TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A7JE Switching Applications Unit: mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. 1.EMITTER1 (E1) Equivalent Circuit and Bias Resistor Values 2.BASE1 (B1) 3.EMITTER2 (E2) Q1 Q2 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) BASE2 (B2) C C JEDEC ? R1 R1 JEITA ? B B TOSHIBA 2-2P1E Weight: 3 mg (typ.) E E Q1 R1: 10 k?, R2: 10 k? Q2: R1: 4.7 k?, R2: 10 k? Marking Equivalent Circuit (top view) 1 2009-04-23 R2 R2 RN47A7JE Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V

5.8. rn47a4.pdf Size:107K _toshiba

RN47A4 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A4 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 B B JEDEC ? E E JEITA ? Q1 TOSHIBA 2-2L1D R1: 47 k?, R2: 47 k? Weight: 0.0062g (typ.) Q2 R1: 10 k?, R2: 47 k? Q1: RN1104F Q2: RN2107F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 4 Q1 1 2 3 1 2 3 1 2004-04-28 R2 R2 RN47A4 Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V Collector current

5.9. rn47a2.pdf Size:107K _toshiba

RN47A2 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A2 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications. • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 B B JEDEC ? E E JEITA ? R1: 22 k? (Q1, Q2 common) TOSHIBA 2-2L1D R2: 22 k? (Q1, Q2 common) Weight:0.0062g (typ.) Q1: RN1103F Q2: RN2103F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 2 Q1 1 2 3 1 2 3 1 2004-04-28 R2 R2 RN47A2 Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V Collector current

5.10. rn47a2je_071101.pdf Size:290K _toshiba

RN47A2JE TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A2JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 1.EMITTER1 (E1) 2.BASE1 (B1) C C 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) BASE2 (B2) R1 R1 B B JEDEC ? JEITA ? E E TOSHIBA 2-2P1E R1: 22 k? (Q1, Q2 common) Weight: 0.003g (typ.) R2: 22 k? (Q1, Q2 common) Q1: RN1103F Q2: RN2103F Marking Equivalent Circuit (top view) 5 4 5 4 Q2 2 2 Q1 1 2 3 1 2 3 1 2007-11-01 R2 R2 RN47A2JE Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit

See also transistors datasheet: RN47A1 , RN47A2JE , RN47A2 , RN47A3JE , RN47A3 , RN47A4JE , RN47A4 , RN47A5JE , 2N5551 , RN47A6 , RN47A7JE , RN4901FE , RN4901 , RN4902FE , RN4902 , RN4903FE , RN4903 .

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