RN4983 Transistor Datasheet. Parameters and Characteristics.

Type Designator: RN4983

Material of transistor: Si

Polarity: NPN*PNP

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of RN4983 transistor: SOT-363_SC-88_US6

RN4983 Equivalent Transistors - Cross-Reference Search

RN4983 PDF document for downloads:

1.1. rn4983.pdf Size:252K _toshiba

RN4983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4983 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 22k? R2: 22k? (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ? JEITA ? Characteristic Symbol Rating Unit TOSHIBA 2-2J1A Collector-base voltage VCBO 50 V Weight: 6.8mg (typ.) Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V Collector current IC 100 mA Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -10 V Collector current IC -100 mA 1 2007-11-01 RN4983 Q

1.2. rn4983fe.pdf Size:103K _toshiba

RN4983FE TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4983FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 B B JEDEC ? E E JEITA ? R1: 22 k? TOSHIBA 2-2N1G R2: 22 k? Weight: 0.003 g (typ.) (Q1, Q2 common) Marking Equivalent Circuit (top view) 6 5 4 6 C Q2 Q1 1 2 3 1 2004-07-01 R2 R2 RN4983FE Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V Collector current IC 100 mA Maximum Ratings (Ta = 25°C) (Q2)

1.3. rn4983fs.pdf Size:143K _toshiba

RN4983FS TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN4983FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. 1 6 Reducing the parts count enables the manufacture of ever more 5 2 compact equipment and lowers assembly cost. 4 3 Equivalent Circuit and Bias Resistor Values Q1 Q2 (E1) C C 1.EMITTER1 (B1) 2.BASE1 (C2) 3.COLLECTOR2 (E2) 4.EMITTER2 R1 R1 (B2) 5.BASE2 B B (C1) fS6 6.COLLECTOR1 JEDEC ? E E JEITA ? R1: 22 k? TOSHIBA 2-1F1D R2: 22 k? Weight: 0.001g (typ.) (Q1, Q2 common) Equivalent Circuit (top view) Marking Type name 6 5 4 W2 Q2 Q1 1 2 3 1 2007-11-01 0.15±0.05 1.0±0.05 0.7±0.05 0.35 0.35 -0.04 +0.02 0.1±0.05

1.4. rn4983afs_071101.pdf Size:168K _toshiba

RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 • Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. • Incorporating a bias resistor into the transistor reduces the number of 1 6 parts, so enabling the manufacture of ever more compact equipment and 2 5 lowering assembly cost. 4 3 Equivalent Circuit and Bias Resistor Values Q1 Q2 C C (E1) 1. EMITTER1 (B1) 2. BASE1 (C2) 3. COLLECTOR2 (E2) 4. EMITTER2 R1 R1 (B2) 5. BASE2 B B (C1) fS6 6. COLLECTOR1 JEDEC ? E E JEITA ? R1: 22 k? TOSHIBA 2-1F1D R2: 22 k? Weight: 0.001g (typ.) (Q1, Q2 common) Equivalent Circuit (top view) Marking Type name 6 5 4 V2 Q2 Q1 1 2 3 1 2007-11-01 0.15±0.05 1.0±0.05 0.7±0.05 0.35 0.35 -0.04 +0.02 0.1±

See also transistors datasheet: RN4981 , RN4982AFS , RN4982FE , RN4982FS , RN4982 , RN4983AFS , RN4983FE , RN4983FS , TIP31C , RN4984AFS , RN4984FE , RN4984FS , RN4984 , RN4985AFS , RN4985FE , RN4985FS , RN4985 .

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