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2SC5197
  2SC5197
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2SC5197
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2SC5197
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SC5197 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC5197 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC5197

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 8

Maksimalna temperatura (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of 2SC5197 transistor: TO3P(N)

2SC5197 Equivalent Transistors - Cross-Reference Search

2SC5197 PDF doc:

1.1. 2sc5197.pdf Size:171K _toshiba

2SC5197
2SC5197

1.2. 2sc5197.pdf Size:284K _inchange_semiconductor

2SC5197
2SC5197
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 0.8 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)

4.1. 2sc5199.pdf Size:170K _toshiba

2SC5197
2SC5197

4.2. 2sc5196.pdf Size:170K _toshiba

2SC5197
2SC5197

4.3. 2sc5198.pdf Size:148K _toshiba

2SC5197
2SC5197
2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 100 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C JEITA ? Storage temperature range Tstg -55 to 150 C TOSHIBA 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

4.4. 2sc5194.pdf Size:65K _nec

2SC5197
2SC5197
DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 2.10.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Compact Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5194-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5194-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape. PIN CONNECTIONS Remark If you require an evaluation sample, please contact an NEC 1. Collector 2. Emitter Sales Representative. (Unit sample quantity is 50 pcs.) 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage

4.5. 2sc5193.pdf Size:55K _nec

2SC5197
2SC5197
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.10.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 2 Compact Mini Mold Package EIAJ: SC-70 3 1 ORDERING INFORMATION PART Marking QUANTITY PACKING STYLE NUMBER 2SC5193-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (collector) face to perforation side of the tape. 2SC5193-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2 (Base) face to perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC PIN CONNECTIONS Sales Representative. (Unit sample quantity is 50 pcs.) 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATI

4.6. 2sc5191.pdf Size:56K _nec

2SC5197
2SC5197
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 3-pin minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5191 50 pcs (Non reel) 8 mm wide embossed taping Pin 3 (collector) face to perforation side of the tape 2SC5191-T1B 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature

4.7. 2sc5195.pdf Size:54K _nec

2SC5197
2SC5197
DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 1.60.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.80.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA Supercompact Mini Mold Package 3 1 ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5195 In-bulk products Embossed tape 8 mm wide. (50 pcs.) Pin 3 (Collector) face to perforation side of the tape. 2SC5195-T1 Taped products (3 Kpcs/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Emitter 2. Base PARAMETER SYMBOL RATING UNIT 3. Collector Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collect

4.8. 2sc5192.pdf Size:68K _nec

2SC5197
2SC5197
DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Mini Mold Package EIAJ: SC-61 ORDERING INFORMATION 5? 5? PART NUMBER QUANTITY PACKING STYLE 2SC5192-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5192-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to 5? 5? perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC PIN CONNECTIONS 1. Collector Sales Representative. (Unit sample quantity is 50 pcs.) 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAME

4.9. 2sc5190.pdf Size:37K _panasonic

2SC5197
2SC5197
Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V 0.2 0.1 Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC70 Collector current IC 30 mA 3:Collector SMini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : 3Y Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 5V, IE = 0 1 A Emitter cutoff current IEBO VEB = 1V, IC = 0 1 A Forward current transfer ratio

4.10. 2sc5190_e.pdf Size:40K _panasonic

2SC5197
2SC5197
Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V 0.2 0.1 Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC70 Collector current IC 30 mA 3:Collector SMini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : 3Y Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 5V, IE = 0 1 A Emitter cutoff current IEBO VEB = 1V, IC = 0 1 A Forward current transfer ratio

4.11. 2sc5199.pdf Size:137K _inchange_semiconductor

2SC5197
2SC5197
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A IB Base current 1.2 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR

4.12. 2sc5196.pdf Size:237K _inchange_semiconductor

2SC5197
2SC5197
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IBB Base Current-Continuous 0.6 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CE

4.13. 2sc5198.pdf Size:287K _inchange_semiconductor

2SC5197
2SC5197
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR

See also transistors datasheet: 2SC5122 , 2SC5154 , 2SC5171 , 2SC5172 , 2SC5173 , 2SC5174 , 2SC5176 , 2SC5196 , S9018 , 2SC5198 , 2SC5199 , 2SC5201 , 2SC5208 , 2SC5242 , 2SC5266A , 2SC5279 , 2SC5307 .

Keywords

 2SC5197 Datasheet  2SC5197 Datenblatt  2SC5197 RoHS  2SC5197 Distributor
 2SC5197 Application Notes  2SC5197 Component  2SC5197 Circuit  2SC5197 Schematic
 2SC5197 Equivalent  2SC5197 Cross Reference  2SC5197 Data Sheet  2SC5197 Fiche Technique

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