All Transistors. 2SC5197 Datasheet

 

2SC5197 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC5197

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 120 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO3PN

2SC5197 Transistor Equivalent Substitute - Cross-Reference Search

2SC5197 Datasheet PDF:

1.1. 2sc5197.pdf Size:171K _toshiba

2SC5197
2SC5197

1.2. 2sc5197.pdf Size:284K _inchange_semiconductor

2SC5197
2SC5197

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

4.1. 2sc5198.pdf Size:148K _toshiba

2SC5197
2SC5197

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltag

4.2. 2sc5196.pdf Size:170K _toshiba

2SC5197
2SC5197

4.3. 2sc5199.pdf Size:170K _toshiba

2SC5197
2SC5197

4.4. 2sc5191.pdf Size:56K _nec

2SC5197
2SC5197

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 3-pin mini

4.5. 2sc5195.pdf Size:54K _nec

2SC5197
2SC5197

DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 1.60.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.80.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA Supercompact M

4.6. 2sc5194.pdf Size:65K _nec

2SC5197
2SC5197

DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 2.10.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Compact Mi

4.7. 2sc5193.pdf Size:55K _nec

2SC5197
2SC5197

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.10.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Curre

4.8. 2sc5192.pdf Size:68K _nec

2SC5197
2SC5197

DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collector Current I

4.9. 2sc5190_e.pdf Size:40K _panasonic

2SC5197
2SC5197

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=

4.10. 2sc5190.pdf Size:37K _panasonic

2SC5197
2SC5197

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=

4.11. 2sc5198.pdf Size:287K _inchange_semiconductor

2SC5197
2SC5197

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

4.12. 2sc5196.pdf Size:237K _inchange_semiconductor

2SC5197
2SC5197

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

4.13. 2sc5199.pdf Size:137K _inchange_semiconductor

2SC5197
2SC5197

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) an

4.14. 2sc5191.pdf Size:933K _kexin

2SC5197
2SC5197

SMD Type Transistors NPN Transistors 2SC5191 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=6V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

Datasheet: 2SC5122 , 2SC5154 , 2SC5171 , 2SC5172 , 2SC5173 , 2SC5174 , 2SC5176 , 2SC5196 , S9018 , 2SC5198 , 2SC5199 , 2SC5201 , 2SC5208 , 2SC5242 , 2SC5266A , 2SC5279 , 2SC5307 .

 


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