All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SC5197
  2SC5197
  2SC5197
 
2SC5197
  2SC5197
  2SC5197
 
2SC5197
  2SC5197
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
2SC5197 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC5197 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC5197

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 8

Maksimalna temperatura (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of 2SC5197 transistor: TO3P(N)

2SC5197 Equivalent Transistors - Cross-Reference Search

2SC5197 PDF doc:

1.1. 2sc5197.pdf Size:171K _toshiba

2SC5197
2SC5197

1.2. 2sc5197.pdf Size:284K _inchange_semiconductor

2SC5197
2SC5197
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 0.8 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)

4.1. 2sc5199.pdf Size:170K _toshiba

2SC5197
2SC5197

4.2. 2sc5196.pdf Size:170K _toshiba

2SC5197
2SC5197

4.3. 2sc5198.pdf Size:148K _toshiba

2SC5197
2SC5197
2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 100 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C JEITA ? Storage temperature range Tstg -55 to 150 C TOSHIBA 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

4.4. 2sc5194.pdf Size:65K _nec

2SC5197
2SC5197
DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 2.10.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Compact Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5194-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5194-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape. PIN CONNECTIONS Remark If you require an evaluation sample, please contact an NEC 1. Collector 2. Emitter Sales Representative. (Unit sample quantity is 50 pcs.) 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage

4.5. 2sc5193.pdf Size:55K _nec

2SC5197
2SC5197
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.10.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 2 Compact Mini Mold Package EIAJ: SC-70 3 1 ORDERING INFORMATION PART Marking QUANTITY PACKING STYLE NUMBER 2SC5193-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (collector) face to perforation side of the tape. 2SC5193-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2 (Base) face to perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC PIN CONNECTIONS Sales Representative. (Unit sample quantity is 50 pcs.) 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATI

4.6. 2sc5191.pdf Size:56K _nec

2SC5197
2SC5197
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 3-pin minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5191 50 pcs (Non reel) 8 mm wide embossed taping Pin 3 (collector) face to perforation side of the tape 2SC5191-T1B 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature

4.7. 2sc5195.pdf Size:54K _nec

2SC5197
2SC5197
DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 1.60.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.80.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA Supercompact Mini Mold Package 3 1 ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5195 In-bulk products Embossed tape 8 mm wide. (50 pcs.) Pin 3 (Collector) face to perforation side of the tape. 2SC5195-T1 Taped products (3 Kpcs/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Emitter 2. Base PARAMETER SYMBOL RATING UNIT 3. Collector Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collect

4.8. 2sc5192.pdf Size:68K _nec

2SC5197
2SC5197
DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Mini Mold Package EIAJ: SC-61 ORDERING INFORMATION 5? 5? PART NUMBER QUANTITY PACKING STYLE 2SC5192-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5192-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to 5? 5? perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC PIN CONNECTIONS 1. Collector Sales Representative. (Unit sample quantity is 50 pcs.) 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAME

4.9. 2sc5190.pdf Size:37K _panasonic

2SC5197
2SC5197
Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V 0.2 0.1 Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC70 Collector current IC 30 mA 3:Collector SMini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : 3Y Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 5V, IE = 0 1 A Emitter cutoff current IEBO VEB = 1V, IC = 0 1 A Forward current transfer ratio

4.10. 2sc5190_e.pdf Size:40K _panasonic

2SC5197
2SC5197
Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V 0.2 0.1 Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC70 Collector current IC 30 mA 3:Collector SMini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : 3Y Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 5V, IE = 0 1 A Emitter cutoff current IEBO VEB = 1V, IC = 0 1 A Forward current transfer ratio

4.11. 2sc5199.pdf Size:137K _inchange_semiconductor

2SC5197
2SC5197
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A IB Base current 1.2 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR

4.12. 2sc5196.pdf Size:237K _inchange_semiconductor

2SC5197
2SC5197
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IBB Base Current-Continuous 0.6 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CE

4.13. 2sc5198.pdf Size:287K _inchange_semiconductor

2SC5197
2SC5197
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR

See also transistors datasheet: 2SC5122 , 2SC5154 , 2SC5171 , 2SC5172 , 2SC5173 , 2SC5174 , 2SC5176 , 2SC5196 , S9018 , 2SC5198 , 2SC5199 , 2SC5201 , 2SC5208 , 2SC5242 , 2SC5266A , 2SC5279 , 2SC5307 .

Keywords

 2SC5197 Datasheet  2SC5197 Datenblatt  2SC5197 RoHS  2SC5197 Distributor
 2SC5197 Application Notes  2SC5197 Component  2SC5197 Circuit  2SC5197 Schematic
 2SC5197 Equivalent  2SC5197 Cross Reference  2SC5197 Data Sheet  2SC5197 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com