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2SC5106 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC5106

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 10

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 6000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of 2SC5106 transistor: S-Mini(2.9x.2.5)

2SC5106 Equivalent Transistors - Cross-Reference Search

2SC5106 PDF document for downloads:

1.1. 2sc5106.pdf Size:238K _toshiba

2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 µA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 µA hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (Note

4.1. 2sc5108ft.pdf Size:133K _toshiba

2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA ? TOSHIBA 2-1B1A Electrical Characteristics (Ta = Weight: 0.0022 g (typ.) = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 µA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 µA hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (N

4.2. 2sc5108.pdf Size:242K _toshiba

2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 µA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 µA hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (Note 2)

4.3. 2sc5109.pdf Size:242K _toshiba

2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 µA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 µA hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (Note

4.4. 2sc5107.pdf Size:241K _toshiba

2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 µA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 µA hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (No

4.5. 2sc5103.pdf Size:164K _rohm

High speed switching transistor (60V, 5A) 2SC5103 ?Features ?Dimensions (Unit : mm) 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 ?s at IC = 3A) 5.5 1.5 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. 0.9 C0.5 0.8Min. (1) Base 1.5 2.5 (2) Collector ?Absolute maximum ratings (Ta=25?C) ROHM : CPT3 9.5 (3) Emitter Parameter Symbol Limits Unit EIAJ : SC-63 Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V 5 A(DC) Collector current IC 10 A(Pulse) ? Collector power 1 W PC dissipation 10 W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ?Single pulse Pw=100ms ?Packaging specifications and hFE Type 2SC5103 Package CPT3 hFE Q Code TL Basic ordering unit (pieces) 2500 ?Electrical characteristics (Ta=25?C) Typ. Parameter Symbol Min. Max. Unit Conditions Collector-base breakdown voltage BVCBO 100 - - V IC =

4.6. 2sc5104.pdf Size:62K _panasonic

Power Transistors 2SC5104 Silicon NPN triple diffusion planar type Unit: mm 8.5± 0.2 3.4± 0.3 For high breakdown voltage high-speed switching 6.0± 0.5 1.0± 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8± 0.1 0.5max. Wide area of safe operation (ASO) 2.54± 0.3 Satisfactory linearity of foward current transfer ratio hFE 5.08± 0.5 N type package enabling direct soldering of the radiating fin to 1:Base 1 2 3 2:Collector the printed circuit board, etc. of small electronic equipment. 3:Emitter N Type Package Unit: mm Absolute Maximum Ratings (TC=25?C) 8.5± 0.2 3.4± 0.3 6.0± 0.3 1.0± 0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V R0.5 0.8± 0.1 R0.5 Peak collector current ICP 6 A 0 to 0.4 2.54± 0.3 1.1 max. Collector current IC 3 A 5.08± 0.5 Base current IB 1.2 A 1:Base 1 2 3 2:Collector Collector powe

4.7. 2sc5100.pdf Size:24K _sanken-ele

2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) Application : Audio and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF) 2SC5100 Unit Symbol 2SC5100 Unit Symbol Conditions ±0.2 ±0.2 5.5 15.6 ±0.2 3.45 10max µ A VCBO 160 V ICBO VCB=160V VCEO 120 V VEB=6V IEBO 10max µ A VEBO 6 V IC=50mA V(BR)CEO 120min V ±0.2 o3.3 IC 8 A VCE=4V, IC=3A hFE 50min? a b 0.5max V IB VCE(sat) IC=3A, IB=0.3A 3 A 20typ MHz PC fT VCE=12V, IE=–0.5A 75(Tc=25°C) W 1.75 0.8 200typ pF Tj COB VCB=10V, f=1MHz 150 °C 2.15 Tstg –55 to +150 °C ? hFE Rank O(50to100), P(70to140), Y(90to180) 1.05+0.2 -0.1 ±0.1 ±0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 Weight : Approx 6.5g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. B C E b. Lot No. 40 10 4 10 –5 0.4 –0.4 0.13typ 3

4.8. 2sc5101.pdf Size:25K _sanken-ele

2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF) Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit ±0.2 ±0.2 5.5 15.6 ±0.2 3.45 VCBO 200 V ICBO VCB=200V 10max µ A VCEO 140 V IEBO VEB=6V 10max µ A VEBO 6 V V(BR)CEO IC=50mA 140min V ±0.2 o3.3 IC 10 A VCE=4V, IC=3A 50min? hFE a b IB 4 A IC=5A, IB=0.5A 0.5max V VCE(sat) PC fT VCE=12V, IE=–0.5A 20typ MHz 80(Tc=25°C) W 1.75 0.8 Tj COB VCB=10V, f=1MHz 250typ pF 150 °C 2.15 Tstg –55 to +150 °C ? hFE Rank O(50to100), P(70to140), Y(90to180) 1.05+0.2 -0.1 ±0.1 ±0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 Weight : Approx 6.5g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. B C E b. Lot No. 60 12 5 10 –5 0.5 –0.5 0.24typ 4.32typ

4.9. 2sc5100.pdf Size:152K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Complement to type 2SA1908 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 6 Emitter-base voltage Open collector Collector current 8 Base current Collector power dissipation Junction temperature Storage temperature TC=25Ўж 3 75 150 -55~150 UNIT V V V A A W Ўж Ўж 1

4.10. 2sc5101.pdf Size:152K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Complement to type 2SA1909 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 6 Emitter-base voltage Open collector Collector current 10 4 TC=25Ўж 80 150 -55~150 Base current Collector power dissipation Junction temperature Storage temperature UNIT V V V A A W Ўж Ўж 1

See also transistors datasheet: 2SC5085 , 2SC5086 , 2SC5087 , 2SC5087R , 2SC5088 , 2SC5092 , 2SC5095 , 2SC5096 , BC147 , 2SC5107 , 2SC5108 , 2SC5317FT , 2SC5319 , MT3S03AU , MT3S04AU , MT3S07FS , MT3S07T .

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