DTB723YM Transistor Datasheet. Parameters and Characteristics.

Type Designator: DTB723YM

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 15

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 260

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 140

Noise Figure, dB: -

Package of DTB723YM transistor: VMT3

DTB723YM Equivalent Transistors - Cross-Reference Search

DTB723YM PDF document for downloads:

3.1. dtb723ye.pdf Size:185K _rohm

-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB723YE / DTB723YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB723YE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( ) 2 1 an inverter circuit without connecting external input resistors 0.2 0.2 0.15 (1) GND (see equivalent circuit). 0.5 0.5 (2) IN 1.0 3) The bias resistors consist of thin-film resistors EMT3 (3) OUT JEITA No. (SC-75A) with complete isolation to allow positive biasing of the input. JEDEC No. Each lead has same dimensions They also have the advantage of almost completely eliminating parasitic effects. Abbreviated symbol : M52 4) Only the on / off conditions need to be set for operation, making the device design easy. DTB723YM 1.2 0.32 (3) Structure PNP epitaxial plannar silicon transistor (1)(2) 0.22 (Resistor bu

See also transistors datasheet: DTB543EM , DTB543XE , DTB543XM , DTB543ZE , DTB543ZM , DTB713ZE , DTB713ZM , DTB723YE , 2N2219A , DTB743EE , DTB743EM , DTB743XE , DTB743XM , DTB743ZE , DTB743ZM , DTC014EEB , DTC014EM .

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