DTC043ZM Transistor Datasheet. Parameters and Characteristics.

Type Designator: DTC043ZM

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 30

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of DTC043ZM transistor: VMT3

DTC043ZM Equivalent Transistors - Cross-Reference Search

DTC043ZM PDF document for downloads:

3.1. dtc043zeb.pdf Size:973K _rohm

Data Sheet 100mA/50V Digital transistors(with built-in resistors) DTC043ZM / DTC043ZEB / DTC043ZUB ?Features ?Dimensions (Unit : mm) 1) Built-in bias resistors enable the configuration of VMT3 an inverter circuit without connecting external input resistors. (See Equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely Abbreviated symbol : 42 eliminating parasitic effects. EMT3F 3) Only the on/off conditions need to be set for operation, making the device design easy. (3) (1) (2) ?Structure NPN epitaxial planar silicon transistor Abbreviated symbol : 42 (Resistor built-in type) UMT3F 2.0 0.9 0.32 (3) ?Applications (1) (2) Inverter, Interface, Driver 0.65 0.65 0.13 1.3 Abbreviated symbol : 42 ?Packaging specifications and hFE ?Equivalent circuit Package VMT3 EMT3F UMT3F R1 OUT IN Packaging Type Taping Taping Taping R2

4.1. dtc043teb.pdf Size:278K _rohm

100mA/50V Digital transistors(with built-in resistors) DTC043TM / DTC043TEB / DTC043TUB ?Features ?Dimensions (Unit : mm) 1) Built-in bias resistors enable the configuration of VMT3 an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Abbreviated symbol : 49 3) Only the on/off conditions need to be set for operation, EMT3F making the device design easy. (3) ?Structure NPN epitaxial planar silicon transistor (1) (2) (Resistor built-in type) Abbreviated symbol : 49 UMT3F 2.0 ?Applications 0.9 0.32 Inverter, Interface, Driver (3) (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol : 49 ?Packaging specifications ? Equivalent circuit Package VMT3 EMT3F UMT3F Packaging Type Taping Taping Taping C R1 Type Code T2L TL TL B Basi

4.2. dtc043eb.pdf Size:283K _rohm

100mA/50V Digital transistors(with built-in resistors) DTC043EM / DTC043EEB / DTC043EUB ?Features ?Dimensions (Unit : mm) 1) Built-in bias resistors enable the configuration of VMT3 an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely Abbreviated symbol : 47 eliminating parasitic effects. EMT3F 3) Only the on/off conditions need to be set for operation, making the device design easy. (3) (1) (2) ?Structure Abbreviated symbol : 47 NPN epitaxial planar silicon transistor (Resistor built-in type) UMT3F 2.0 0.9 0.32 (3) ?Applications (1) (2) Inverter, Interface, Driver 0.65 0.65 0.13 1.3 Abbreviated symbol : 47 ?Packaging specifications ? ?Equivalent circuit Package VMT3 EMT3F UMT3F R1 OUT IN Packaging Type Taping Taping Taping R2 Type Code T2L TL TL

See also transistors datasheet: DTC023YUB , DTC024EEB , DTC024EM , DTC024EUB , DTC043EEB , DTC043EM , DTC043EUB , DTC043ZEB , 2N2222A , DTC043ZUB , DTC044EEB , DTC044EM , DTC044EUB , DTC114EEB , DTC114EM , DTC114EUB , DTC114WE .

Keywords