2N5884 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5884
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 800 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2N5884 Transistor Equivalent Substitute - Cross-Reference Search
2N5884 Datasheet (PDF)
2n5883 2n5884 2n5885 2n5886.pdf
Order this documentMOTOROLAby 2N5883/DSEMICONDUCTOR TECHNICAL DATAPNP2N5883Complementary SiliconHigh-Power Transistors2N5884*NPN. . . designed for general purpose power amplifier
2n5883 2n5884 2n5885 2n5886 2.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n5883 2n5884 2n5885 2n5886.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.http://onsemi.comFeatures25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1
2n5883 2n5884 2n5885 2n5886.pdf
ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n5883 2n5884.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PAR
2n5883 2n5884.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 High power dissipations APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute
2n5884.pdf
isc Silicon PNP Power Transistor 2N5884DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltag
2n5884g 2n5884g 2n5886g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5879 2n5880 2n5881 2n5882.pdf
Order this documentMOTOROLAby 2N5879/DSEMICONDUCTOR TECHNICAL DATAPNP2N5879Complementary Silicon2N5880*High-Power TransistorsNPN. . . designed for general purpose power amplifier
2n5886.pdf
2N5886HIGH CURRENT SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPNTO-3power transistor mounted in Jedec TO-3 metalcase. It is inteded for use in power linearamplif
2n5879 2n5880 2n5881 2n5882.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5886g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5885g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5883g 2n5883g 2n5885g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5879 2n5880 2n5881 2n5882.pdf
ABoca Semiconductor Corp. BSC http://www.bocasemi.comAABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n5881 2n5882.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolu
2n5885 2n5886.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION With TO-3 package Complement to type 2N5883 2N5884 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PAR
2n5886.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5886DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 15ACE(sat) CDC Current Gain-: h = 20- @I = 10AFE CAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 V
2n5885 5886.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- : hFE= 20(Min)@IC= 10A Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
2n5881 2n5882.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsol
2n5879 2n5880.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolu
2n5885.pdf
isc Silicon NPN Power Transistors 2N5885DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 15ACE(sat) CDC Current Gain-: h = 20- @I = 10AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM R
2n5885 2n5886.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- : hFE= 20(Min)@IC= 10A Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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