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2N5884 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5884

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 25

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 800

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N5884 transistor: TO3

2N5884 Equivalent Transistors - Cross-Reference Search

2N5884 PDF doc:

1.1. 2n5883_2n5884_2n5885_2n5886.pdf Size:275K _motorola

Order this document MOTOROLA by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 Complementary Silicon High-Power Transistors 2N5884* NPN . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — 2N5885 VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current 2N5886* ICEX = 1.0 mAdc (max) at Rated Voltage • Excellent DC Current Gain — *Motorola Preferred Device hFE = 20 (min) at IC = 10 Adc IIIIIIIIIIIIIIIIIIIIIII • High Current Gain Bandwidth Product — f? = 4.0 MHz (min) at IC = 1.0 Adc 25 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON MAXIMUM RATINGS (1) IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII POWER TRANSISTORS 2N5883 2N5884 60–80 VOLTS IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII III

1.2. 2n5883_2n5884_2n5885_2n5886_2.pdf Size:105K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

1.3. 2n5883_2n5884_2n5885_2n5886.pdf Size:94K _onsemi

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. http://onsemi.com Features 25 AMPERE COMPLEMENTARY • Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc 60 - 80 VOLTS, 200 WATTS • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excellent DC Current Gain - hFE = 20 (min) at IC = 10 Adc • High Current Gain Bandwidth Product - ft = 4.0 MHz (min) at IC = 1.0 Adc • Pb-Free Packages are Available* TO-204AA (TO-3) CASE 1-07 MAXIMUM RATINGS (Note 1) STYLE 1 IIIIIIIIIIIIIIIIIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII III II Collector-Emitter Voltage VCEOIIIII Vdc MARKING DIAGRAM IIIIIIIIIIII II IIIIIIIIIIII IIIII III III II 2N5883, 2N5885 60 2N5884, 2N5886 80 IIIIII

1.4. 2n5883_2n5884_2n5885_2n5886.pdf Size:190K _bocasemi

A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.5. 2n5883_2n5884.pdf Size:120K _jmnic

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION ·With TO-3 package ·Complement to type 2N5885 2N5886 APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5883 60 Collector-base VCBO Open emitter V voltage 2N5884 80 2N5883 60 Collector-emitter VCEO Open base V voltage 2N5884 80 VEBO Emitter-base voltage Open collector 5 V IC Collector current 25 A ICM Collector current-peak 50 A IB Base current 7.5 A PD Total Power Dissipation TC=25? 200 W Tj Junction temperature 200 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 0.875 ?/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors 2N

1.6. 2n5883_2n5884.pdf Size:118K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N5885 2N5886 Ў¤ High power dissipations APPLICATIONS They are intended for use in power linear and switching applications Ў¤ PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO PARAMETER CONDITIONS 2N5883 Collector-base voltage 2N5884 VCEO VEBO IC ICM IB PD Tj Tstg ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature 2N5883 2N5884 EMIC ES Open emitter Open base Open collector OND TOR UC VALUE -60 -80 -60 -80 -5 -25 -50 -7.5 UNIT V V V A A A W Ўж Ўж TC=25Ўж 200 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal re

See also transistors datasheet: 2N5876 , 2N5877 , 2N5878 , 2N5879 , 2N5880 , 2N5881 , 2N5882 , 2N5883 , 2SC1740 , 2N5885 , 2N5886 , 2N5887 , 2N5888 , 2N5889 , 2N588A , 2N589 , 2N5890 .

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