All Transistors. 2SD2114 Datasheet

 

2SD2114 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SD2114

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 820

Noise Figure, dB: -

Package: SOT23

2SD2114 Transistor Equivalent Substitute - Cross-Reference Search

2SD2114 PDF doc:

1.1. 2sd2114.pdf Size:124K _rohm

2SD2114
2SD2114

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures FExternal dimensions (Units: mm) 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor (96-232-C107) 232 Transistors 2SD2114K

1.2. 2sd2114ks.pdf Size:157K _rohm

2SD2114
2SD2114

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K ?Features ?Dimensions (Unit : mm) 1) High DC current gain. 2SD2114K 2.90.2 1.1+0.2 hFE = 1200 (Typ.) 1.90.2 -0.1 0.80.1 0.95 0.95 2) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 0?0.1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.1 0.15-0.06 +0.1 0.4 -0.05 All ter

1.3. 2sd2114k-s.pdf Size:89K _rohm

2SD2114
2SD2114

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K 2.90.2 1.1+0.2 1.90.2 -0.1 hFE = 1200 (Typ.) 0.80.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0?0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Typ.) 0.

1.4. 2sd2114.pdf Size:250K _secos

2SD2114
2SD2114

2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. A L High Emitter-Base Voltage. VEBO=12V (Min.) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD2114-V 2SD2114-W Range 820~1800 1200~2700 D Marking BBV BBW

1.5. 2sd2114.pdf Size:883K _htsemi

2SD2114
2SD2114

2SD2114 TRANSISTOR (NPN) FEATURES SOT-23 High DC current gain. High emitter-base voltage. Low VCE (sat). MARKING: BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.5

1.6. 2sd2114_sot-23.pdf Size:229K _lge

2SD2114
2SD2114

2SD2114 SOT-23 Transistor(NPN) 1. BASE SOT-23 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-B

1.7. l2sd2114kvlt1g.pdf Size:106K _lrc

2SD2114
2SD2114

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low V CE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT– 2

1.8. l2sd2114kwlt1g.pdf Size:105K _lrc

2SD2114
2SD2114

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT– 23 (TO

1.9. 2sd2114.pdf Size:784K _kexin

2SD2114
2SD2114

SMD Type Transistors NPN Transistors 2SD2114 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=500mA Collector ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Base 1.Base 2.Emitter Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Ba

Datasheet: 2SC1819A , 2SC4672 , 2SC5343 , 2SC5344 , 2SC5345 , 2SD0602 , 2SD0602A , 2SD2098 , BC550 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , A1015 , A42 , A44 .

 


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