All Transistors Datasheet

 

2SD2114 Transistor (IC) Datasheet. Cross Reference Search. 2SD2114 Equivalent

Type Designator: 2SD2114

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 12

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 350

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 820

Noise Figure, dB: -

Package of 2SD2114 transistor: SOT23

2SD2114 Transistor Equivalent Substitute - Cross-Reference Search

2SD2114 PDF:

1.1. 2sd2114.pdf Size:124K _rohm

2SD2114
2SD2114

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures FExternal dimensions (Units: mm) 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor (96-232-C107) 232 Transistors 2SD2114K

1.2. 2sd2114ks.pdf Size:157K _rohm

2SD2114
2SD2114

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K ?Features ?Dimensions (Unit : mm) 1) High DC current gain. 2SD2114K 2.90.2 1.1+0.2 hFE = 1200 (Typ.) 1.90.2 -0.1 0.80.1 0.95 0.95 2) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 0?0.1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.1 0.15-0.06 +0.1 0.4 -0.05 All ter

1.3. 2sd2114k-s.pdf Size:89K _rohm

2SD2114
2SD2114

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K 2.90.2 1.1+0.2 1.90.2 -0.1 hFE = 1200 (Typ.) 0.80.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0?0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Typ.) 0.

1.4. 2sd2114.pdf Size:250K _secos

2SD2114
2SD2114

2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. A L High Emitter-Base Voltage. VEBO=12V (Min.) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD2114-V 2SD2114-W Range 820~1800 1200~2700 D Marking BBV BBW

1.5. 2sd2114.pdf Size:883K _htsemi

2SD2114
2SD2114

2SD2114 TRANSISTOR (NPN) FEATURES SOT-23 High DC current gain. High emitter-base voltage. Low VCE (sat). MARKING: BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.5

1.6. 2sd2114_sot-23.pdf Size:229K _lge

2SD2114
2SD2114

2SD2114 SOT-23 Transistor(NPN) 1. BASE SOT-23 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-B

1.7. l2sd2114kvlt1g.pdf Size:106K _lrc

2SD2114
2SD2114

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low V CE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT– 2

1.8. l2sd2114kwlt1g.pdf Size:105K _lrc

2SD2114
2SD2114

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT– 23 (TO

1.9. 2sd2114.pdf Size:784K _kexin

2SD2114
2SD2114

SMD Type Transistors NPN Transistors 2SD2114 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=500mA Collector ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Base 1.Base 2.Emitter Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Ba

See also transistors datasheet: 2SC1819A , 2SC4672 , 2SC5343 , 2SC5344 , 2SC5345 , 2SD0602 , 2SD0602A , 2SD2098 , BC550 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , A1015 , A42 , A44 .

Search Terms:

 2SD2114 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


2SD2114
  2SD2114
  2SD2114
  2SD2114
 
2SD2114
  2SD2114
  2SD2114
  2SD2114
 

social 

LIST

Last Update

BJT: CV7372L | CV7372 | CV7371-O | CV7371 | CV7366A-O | CV7366A | CV7366 | CV7362 | CV7346A-O | CV7345A-O | CZT3090LE | CZT3090L | CZT2680 | CZT2000 | CZD13003 | CYT7090LD | CXTA62 | CV7345A | CV7343A-O | CV7343A |

Enter a full or partial SMD code with a minimum of 2 letters or numbers