All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
A1015
  A1015
  A1015
 
A1015
  A1015
  A1015
 
A1015
  A1015
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
A1015 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

A1015 Transistor Datasheet. Parameters and Characteristics.

Type Designator: A1015

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 130

Noise Figure, dB: -

Package of A1015 transistor: SOT23

A1015 Equivalent Transistors - Cross-Reference Search

A1015 PDF doc:

1.1. 2sa1015.pdf Size:227K _toshiba

A1015
A1015
2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) (f = 1 kHz) Complementary to 2SC1815. Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA JEDEC TO-92 Base current IB -50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Coll

1.2. 2sa1015l.pdf Size:228K _toshiba

A1015
A1015
2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 0.2dB (typ.) (f = 1 kHz) Complementary to 2SC1815 (L) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA JEDEC TO-92 Base current IB -50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cu

1.3. ksa1015.pdf Size:42K _fairchild_semi

A1015
A1015
KSA1015 LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA IB Base Current -50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 C TST9 Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V ICBO Collector Cut-off Current VCB= -50V, IE=0 -0.1 A IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 A hFE1 DC Current Gain VCE= -6V, IC= -2mA 70 400 hFE2 VC

1.4. 2sa1015.pdf Size:138K _utc

A1015
A1015
UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO * Collector Current up to 150mA * High h Linearity FE * Complement to UTC 2SC1815 Lead-free: 2SA1015L Halogen-free: 2SA1015G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 2SA1015-x-T92-B 2SA1015L-x-T92-B 2SA1015G-x-T92-B TO-92 E C B Tape Box 2SA1015-x-T92-K 2SA1015L-x-T92-K 2SA1015G-x-T92-K TO-92 E C B Bulk www.unisonic.com.tw 1of 4 Copyright © 2009 Unisonic Technologies Co., LTD QW-R201-004.C 2SA1015 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage V -5 V EBO Collector Current I -150 mA C Base Current I -50 mA B Collector Dissipation P 400 mW C Junctio

1.5. a1015.pdf Size:443K _secos

A1015
A1015
A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A1015-O A1015-Y A1015-GR REF. B Min. Max. A 4.40 4.70 Range 70~140 120~240 200~400 K B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V -50 V CBO Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage V -5 V EBO Collector Current - Continuous I -150 mA C Collector Power Dissipation P 400 mW D Junction, Storage Temperature T , T 125, -55~125 °C J STG ELECTRICAL CHARACTERISTICS (TA = 25

1.6. 2sa1015k.pdf Size:252K _secos

A1015
A1015
2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM: 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM: -0.15 A 3 3 H 0.013 0.100 . Collector-Base Voltage S Top View B V(BR)CBO: -50 V J 0.085 0.177 12 1 K 0.450 0.600 2 V G L 0.890 1.020 1.BASE S 2.100 2.500 2.EMITTER C V 0.450 0.600 3.COLLECTOR All Dimension in mm H J D K ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 ) TYPE NUMBER SYMBOL TEST CONDITIONS Min. Typ. Max. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC = -100 µA, IE = 0 A -50 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -0.1 mA, IB = 0 A -50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10 µA, IC = 0 A -5 - - V Collector Cut-Off Current ICBO VCB = -50 V, IE = 0

1.7. csa1015.pdf Size:195K _cdil

A1015
A1015
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSC1815 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 50 V VCEO Collector Emitter Voltage 50 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 150 mA IB Base Current 50 mA PC Collector Power Dissipation 625 mW Tj, Tstg -55 to +125 ?C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to case 250 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS ICBO VCB =50V, IE=0 Collector Cut off Current 100 nA IEBO VEB=5V, IC = 0 Emitter Cut off Current 100 nA *hFE IC =2mA, VCE=6V DC Current Gain 70 400 hFE IC =150mA, VC

1.8. a1015.pdf Size:337K _htsemi

A1015
A1015
A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 u A Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 u A Emitter cut-off current

1.9. a1015_sot-23.pdf Size:214K _lge

A1015
A1015
A1015 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters) MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdow

1.10. a1015_to-92.pdf Size:192K _lge

A1015
A1015
A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 400 mW Tj Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -5 V Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -50V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A DC current gain hFE VCE= -6V,

1.11. a1015.pdf Size:720K _wietron

A1015
A1015
A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit V VCEO Collector-Emitter Voltage -50 VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage V -5.0 IC -150 mA Collector Current Continuous 0.4 PD W Total Device Dissipation TA=25°C Junction Temperature TJ +150 °C Storage Temperature T -55 to + 150 °C STG *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS V Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 V(BR)CBO - -50 Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0 V(BR)CEO - -50 V Emitter-Base Breakdown Voltage, IE = -100µA, IC = 0 V(BR)EBO - -5.0 V Collector Cut-off Current, VCB = -50V, IE = 0 ICBO µA - -0.1 Collector Cut-off Current, VCE = -50V, IB = 0 IC

1.12. a1015lt1.pdf Size:166K _wietron

A1015
A1015
A1015LT1 A1015LT1 TRANSISTOR (PNP) * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V V (BR)CBO Ic= -100µA, I =0 -50 E Collector-emitter breakdown voltage V Ic= -0.1mA, I =0 - 50 V (BR)CEO B - Emitter-base breakdown voltage V(BR) I = -10µA, I =0 5 V EBO E C Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 µA Collector cut-off current I V = -50V , I =0 -0.1 CEO CE B µA Emitter cut-off current I V =- 5V , I =0 -0.1 EBO EB C µA DC current gain H V =-6V, I = -2mA 130 400 FE(1) CE C Collector-emitter saturation voltage V (sat) I =-100 mA, I = -10mA

1.13. a1015.pdf Size:334K _willas

A1015
A1015
FM120-M WILLAS THRU A1015 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 FEATURES optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. High voltage and high current • High surge capability. Excellent Guardr iLinearity oltage protection. hFE • ng for overv 0.071(1.8) • Ultra high-speed switching. Low niose 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. 1. BASE • Lead-free parts meet environmental standards of 2. EMITTER MIL-STD-19500 /228 • RoHS product for packing code suffix "G"

1.14. hsa1015.pdf Size:45K _hsmc

A1015
A1015
Spec. No. : HE6512 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.27 MICROELECTRONICS CORP. Page No. : 1/4 HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...........................

See also transistors datasheet: 2SD0602A , 2SD2098 , 2SD2114 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , AC127 , A42 , A44 , A733 , A92 , A94 , B772 , C1815 , C945 .

Keywords

 A1015 Datasheet  A1015 Datenblatt  A1015 RoHS  A1015 Distributor
 A1015 Application Notes  A1015 Component  A1015 Circuit  A1015 Schematic
 A1015 Equivalent  A1015 Cross Reference  A1015 Data Sheet  A1015 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com