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A1015
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
A1015 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

A1015 Transistor (IC) Datasheet. Cross Reference Search. A1015 Equivalent

Type Designator: A1015

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 130

Noise Figure, dB: -

Package of A1015 transistor: SOT23

A1015 Equivalent Transistors - Cross-Reference Search

 

A1015 PDF doc:

1.1. 2sa1015.pdf Size:227K _toshiba

A1015
A1015
2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) (f = 1 kHz) Complementary to 2SC1815. Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA JEDEC TO-92 Base current IB -50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Coll

1.2. 2sa1015l.pdf Size:228K _toshiba

A1015
A1015
2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 0.2dB (typ.) (f = 1 kHz) Complementary to 2SC1815 (L) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA JEDEC TO-92 Base current IB -50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cu

1.3. ksa1015.pdf Size:42K _fairchild_semi

A1015
A1015
KSA1015 LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA IB Base Current -50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 C TST9 Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V ICBO Collector Cut-off Current VCB= -50V, IE=0 -0.1 A IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 A hFE1 DC Current Gain VCE= -6V, IC= -2mA 70 400 hFE2 VC

1.4. 2sa1015.pdf Size:138K _utc

A1015
A1015
UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO * Collector Current up to 150mA * High h Linearity FE * Complement to UTC 2SC1815 Lead-free: 2SA1015L Halogen-free: 2SA1015G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 2SA1015-x-T92-B 2SA1015L-x-T92-B 2SA1015G-x-T92-B TO-92 E C B Tape Box 2SA1015-x-T92-K 2SA1015L-x-T92-K 2SA1015G-x-T92-K TO-92 E C B Bulk www.unisonic.com.tw 1of 4 Copyright © 2009 Unisonic Technologies Co., LTD QW-R201-004.C 2SA1015 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage V -5 V EBO Collector Current I -150 mA C Base Current I -50 mA B Collector Dissipation P 400 mW C Junctio

1.5. 2sa1015k.pdf Size:252K _secos

A1015
A1015
2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM: 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM: -0.15 A 3 3 H 0.013 0.100 . Collector-Base Voltage S Top View B V(BR)CBO: -50 V J 0.085 0.177 12 1 K 0.450 0.600 2 V G L 0.890 1.020 1.BASE S 2.100 2.500 2.EMITTER C V 0.450 0.600 3.COLLECTOR All Dimension in mm H J D K ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 ) TYPE NUMBER SYMBOL TEST CONDITIONS Min. Typ. Max. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC = -100 µA, IE = 0 A -50 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -0.1 mA, IB = 0 A -50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10 µA, IC = 0 A -5 - - V Collector Cut-Off Current ICBO VCB = -50 V, IE = 0

1.6. a1015.pdf Size:443K _secos

A1015
A1015
A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A1015-O A1015-Y A1015-GR REF. B Min. Max. A 4.40 4.70 Range 70~140 120~240 200~400 K B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V -50 V CBO Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage V -5 V EBO Collector Current - Continuous I -150 mA C Collector Power Dissipation P 400 mW D Junction, Storage Temperature T , T 125, -55~125 °C J STG ELECTRICAL CHARACTERISTICS (TA = 25

1.7. csa1015.pdf Size:195K _cdil

A1015
A1015
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSC1815 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 50 V VCEO Collector Emitter Voltage 50 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 150 mA IB Base Current 50 mA PC Collector Power Dissipation 625 mW Tj, Tstg -55 to +125 ?C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to case 250 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS ICBO VCB =50V, IE=0 Collector Cut off Current 100 nA IEBO VEB=5V, IC = 0 Emitter Cut off Current 100 nA *hFE IC =2mA, VCE=6V DC Current Gain 70 400 hFE IC =150mA, VC

1.8. a1015.pdf Size:337K _htsemi

A1015
A1015
A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 u A Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 u A Emitter cut-off current

1.9. a1015_sot-23.pdf Size:214K _lge

A1015
A1015
A1015 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters) MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdow

1.10. a1015_to-92.pdf Size:192K _lge

A1015
A1015
A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 400 mW Tj Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -5 V Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -50V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A DC current gain hFE VCE= -6V,

1.11. a1015lt1.pdf Size:166K _wietron

A1015
A1015
A1015LT1 A1015LT1 TRANSISTOR (PNP) * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V V (BR)CBO Ic= -100µA, I =0 -50 E Collector-emitter breakdown voltage V Ic= -0.1mA, I =0 - 50 V (BR)CEO B - Emitter-base breakdown voltage V(BR) I = -10µA, I =0 5 V EBO E C Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 µA Collector cut-off current I V = -50V , I =0 -0.1 CEO CE B µA Emitter cut-off current I V =- 5V , I =0 -0.1 EBO EB C µA DC current gain H V =-6V, I = -2mA 130 400 FE(1) CE C Collector-emitter saturation voltage V (sat) I =-100 mA, I = -10mA

1.12. a1015.pdf Size:720K _wietron

A1015
A1015
A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit V VCEO Collector-Emitter Voltage -50 VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage V -5.0 IC -150 mA Collector Current Continuous 0.4 PD W Total Device Dissipation TA=25°C Junction Temperature TJ +150 °C Storage Temperature T -55 to + 150 °C STG *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS V Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 V(BR)CBO - -50 Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0 V(BR)CEO - -50 V Emitter-Base Breakdown Voltage, IE = -100µA, IC = 0 V(BR)EBO - -5.0 V Collector Cut-off Current, VCB = -50V, IE = 0 ICBO µA - -0.1 Collector Cut-off Current, VCE = -50V, IB = 0 IC

1.13. a1015.pdf Size:334K _willas

A1015
A1015
FM120-M WILLAS THRU A1015 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 FEATURES optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. High voltage and high current • High surge capability. Excellent Guardr iLinearity oltage protection. hFE • ng for overv 0.071(1.8) • Ultra high-speed switching. Low niose 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. 1. BASE • Lead-free parts meet environmental standards of 2. EMITTER MIL-STD-19500 /228 • RoHS product for packing code suffix "G"

1.14. hsa1015.pdf Size:45K _hsmc

A1015
A1015
Spec. No. : HE6512 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.27 MICROELECTRONICS CORP. Page No. : 1/4 HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...........................

1.15. a1015_sot-23.pdf Size:309K _can-sheng

A1015
A1015
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) FEATURES Complementary to C1815 MARKING:BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) -60 V VCEO Collector-Emitter Voltage (集电极-发射极电压) -50 V VEBO Emitter-Base Voltage (发射极-基极电压) -5 V IC Collector Current -Continuous (集电极电流) -0.15 A PC Collector Power Dissipation (耗散功率) 0.2 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (最小值) (典型

1.16. a1015.pdf Size:373K _can-sheng

A1015
A1015
SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES SOT-23 ♦ High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ♦ Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) ♦ Low niose :NF=1dB(Typ)atf=1KHZ 1、 BASE ♦ Complementary to C1815 2、 EMITTER MARKING: BA MARKING: BA MARKING: BA MARKING: BA 3、 COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO -50 V VCBO VCBO Collector-Base Voltage VCBO VCEO -50 V VCEO VCEO Collector-Emitter Voltage VCEO VEBO -5 V VEBO VEBO Emitter-Base Voltage VEBO IC Collector Current -Continuous 150 mA IC IC IC PC Collector Power D

1.17. 2sa1015m.pdf Size:926K _blue-rocket-elect

A1015
A1015
2SA1015M(BR3CG1015M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流容量大,极好的hFE 特性,低噪声,可与2SC1815M(BR3DG1815M)互补。 High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M(BR3DG1815M). 用途 / Applications 用于普通音频放大,激励级放大。 Audio frequency general purpose amplifier applications, driver stage amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications O Y GR Symbol hFE Range 70~140 120~240 200~400 Marking HBAO HBAY HBAG http://www.fsbrec.com 1 / 6 2SA1015M(BR3CG1015M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃)

1.18. 2sa1015.pdf Size:284K _shenzhen-tuofeng-semi

A1015
A1015
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V Collector cut-off current ICBO

1.19. a1015.pdf Size:538K _shenzhen-tuofeng-semi

A1015
A1015
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO -50 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage IC Collector Current -Continuous -150 mA PD Total Device Dissipation 400 mW TJ, Tstg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0. 1 mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off cu

See also transistors datasheet: 2SD0602A , 2SD2098 , 2SD2114 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , AC127 , A42 , A44 , A733 , A92 , A94 , B772 , C1815 , C945 .

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