All Transistors Datasheet

 

A1015 Transistor (IC) Datasheet. Cross Reference Search. A1015 Equivalent

Type Designator: A1015

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 130

Noise Figure, dB: -

Package of A1015 transistor: SOT23

A1015 Transistor Equivalent Substitute - Cross-Reference Search

 

A1015 PDF:

1.1. 2sa1015.pdf Size:227K _toshiba

A1015
A1015

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

1.2. 2sa1015l.pdf Size:228K _toshiba

A1015
A1015

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low nois

1.3. ksa1015.pdf Size:42K _fairchild_semi

A1015
A1015

KSA1015 LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA

1.4. 2sa1015.pdf Size:138K _utc

A1015
A1015

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO * Collector Current up to 150mA * High h Linearity FE * Complement to UTC 2SC1815 Lead-free: 2SA1015L Halogen-free: 2SA1015G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plat

1.5. 2sa1015k.pdf Size:252K _secos

A1015
A1015

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM: 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM: -0.15 A 3 3 H 0.013 0.100 . Collector-Base Voltage

1.6. a1015.pdf Size:443K _secos

A1015
A1015

A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A1015-O A1015-Y A1015-GR REF. B Min. Max. A 4.40 4.70 Range 7

1.7. csa1015.pdf Size:195K _cdil

A1015
A1015

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSC1815 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 50 V

1.8. a1015.pdf Size:337K _htsemi

A1015
A1015

A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collect

1.9. a1015_sot-23.pdf Size:214K _lge

A1015
A1015

A1015 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters) MARKING: BA MAXIMUM RATINGS

1.10. a1015_to-92.pdf Size:192K _lge

A1015
A1015

A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation

1.11. a1015lt1.pdf Size:166K _wietron

A1015
A1015

A1015LT1 A1015LT1 TRANSISTOR (PNP) * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless oth

1.12. a1015.pdf Size:720K _wietron

A1015
A1015

A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit V VCEO Collector-Emitter Voltage -50 VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage V -5.0 IC -150 mA Collector Current Continuous 0.4 PD W Total Device Dissipation TA=25°C Junction T

1.13. a1015.pdf Size:334K _willas

A1015
A1015

FM120-M WILLAS THRU A1015 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in ord

1.14. hsa1015.pdf Size:45K _hsmc

A1015
A1015

Spec. No. : HE6512 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.27 MICROELECTRONICS CORP. Page No. : 1/4 HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................

1.15. a1015_sot-23.pdf Size:309K _can-sheng

A1015
A1015

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) FEATURES Complementary to C1815 MARKING:BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Vo

1.16. a1015.pdf Size:373K _can-sheng

A1015
A1015

SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES SOT-23 ♦ High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ♦ Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) ♦ Low nio

1.17. 2sa1015m.pdf Size:926K _blue-rocket-elect

A1015
A1015

2SA1015M(BR3CG1015M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流容量大,极好的hFE 特性,低噪声,可与2SC1815M(BR3DG1815M)互补。 High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M(BR3D

1.18. fta1015.pdf Size:262K _first_silicon

A1015
A1015

SEMICONDUCTOR FTA1015 TECHNICAL DATA B C FEATURES TO-92 PNP Transistor DIM MILLIMETERS A 4.70 MAX E MAXIMUM RATINGS (TA=25℃ unless otherwise noted) B 4.80 MAX G C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Units E 1.00 F 1.27 VCBO Collector-Base Voltage -50 V G 0.85 H 0.45 _ H J 14.00 + 0.50 VCEO Collector-Emitter Voltage -50 V L 2.30 F F M 0.51 MAX VEBO Emit

1.19. 2sa1015.pdf Size:284K _shenzhen-tuofeng-semi

A1015
A1015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba

1.20. a1015.pdf Size:538K _shenzhen-tuofeng-semi

A1015
A1015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO -50 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage

See also transistors datasheet: 2SD0602A , 2SD2098 , 2SD2114 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , AC127 , A42 , A44 , A733 , A92 , A94 , B772 , C1815 , C945 .

Search Terms:

 A1015 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


A1015
  A1015
  A1015
  A1015
 
A1015
  A1015
  A1015
  A1015
 

social 

LIST