All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
A1015
  A1015
  A1015
 
A1015
  A1015
  A1015
 
A1015
  A1015
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
A1015 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

A1015 Transistor Datasheet. Parameters and Characteristics.

Type Designator: A1015

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 130

Noise Figure, dB: -

Package of A1015 transistor: SOT23

A1015 Equivalent Transistors - Cross-Reference Search

A1015 PDF doc:

1.1. 2sa1015.pdf Size:227K _toshiba

A1015
A1015
2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) (f = 1 kHz) Complementary to 2SC1815. Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA JEDEC TO-92 Base current IB -50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Coll

1.2. 2sa1015l.pdf Size:228K _toshiba

A1015
A1015
2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 0.2dB (typ.) (f = 1 kHz) Complementary to 2SC1815 (L) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA JEDEC TO-92 Base current IB -50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cu

1.3. ksa1015.pdf Size:42K _fairchild_semi

A1015
A1015
KSA1015 LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA IB Base Current -50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 C TST9 Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V ICBO Collector Cut-off Current VCB= -50V, IE=0 -0.1 A IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 A hFE1 DC Current Gain VCE= -6V, IC= -2mA 70 400 hFE2 VC

1.4. 2sa1015.pdf Size:22K _utc

A1015
A1015
UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to SC1815 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector dissipation Pc 400 W Collector current Ic -150 mA Base current IB -50 mA Junction Temperature Tj 125 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=-100A,IE=0 -50 V Collector-emitter breakdown voltage BVCEO Ic=-10mA,IB=0 -50 V Emitter-base breakdown voltage BVEBO IE=-10A,Ic=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,Ic=0 -100

1.5. a1015.pdf Size:443K _secos

A1015
A1015
A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A1015-O A1015-Y A1015-GR REF. B Min. Max. A 4.40 4.70 Range 70~140 120~240 200~400 K B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V -50 V CBO Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage V -5 V EBO Collector Current - Continuous I -150 mA C Collector Power Dissipation P 400 mW D Junction, Storage Temperature T , T 125, -55~125 °C J STG ELECTRICAL CHARACTERISTICS (TA = 25

1.6. 2sa1015k.pdf Size:252K _secos

A1015
A1015
2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM: 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM: -0.15 A 3 3 H 0.013 0.100 . Collector-Base Voltage S Top View B V(BR)CBO: -50 V J 0.085 0.177 12 1 K 0.450 0.600 2 V G L 0.890 1.020 1.BASE S 2.100 2.500 2.EMITTER C V 0.450 0.600 3.COLLECTOR All Dimension in mm H J D K ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 ) TYPE NUMBER SYMBOL TEST CONDITIONS Min. Typ. Max. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC = -100 µA, IE = 0 A -50 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -0.1 mA, IB = 0 A -50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10 µA, IC = 0 A -5 - - V Collector Cut-Off Current ICBO VCB = -50 V, IE = 0

1.7. csa1015.pdf Size:195K _cdil

A1015
A1015
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSC1815 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 50 V VCEO Collector Emitter Voltage 50 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 150 mA IB Base Current 50 mA PC Collector Power Dissipation 625 mW Tj, Tstg -55 to +125 ?C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to case 250 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS ICBO VCB =50V, IE=0 Collector Cut off Current 100 nA IEBO VEB=5V, IC = 0 Emitter Cut off Current 100 nA *hFE IC =2mA, VCE=6V DC Current Gain 70 400 hFE IC =150mA, VC

1.8. a1015.pdf Size:337K _htsemi

A1015
A1015
A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 u A Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 u A Emitter cut-off current

1.9. a1015_to-92.pdf Size:192K _lge

A1015
A1015
A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 400 mW Tj Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -5 V Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -50V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A DC current gain hFE VCE= -6V,

1.10. a1015_sot-23.pdf Size:214K _lge

A1015
A1015
A1015 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters) MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdow

1.11. a1015.pdf Size:720K _wietron

A1015
A1015
A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit V VCEO Collector-Emitter Voltage -50 VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage V -5.0 IC -150 mA Collector Current Continuous 0.4 PD W Total Device Dissipation TA=25°C Junction Temperature TJ +150 °C Storage Temperature T -55 to + 150 °C STG *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS V Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 V(BR)CBO - -50 Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0 V(BR)CEO - -50 V Emitter-Base Breakdown Voltage, IE = -100µA, IC = 0 V(BR)EBO - -5.0 V Collector Cut-off Current, VCB = -50V, IE = 0 ICBO µA - -0.1 Collector Cut-off Current, VCE = -50V, IB = 0 IC

1.12. a1015lt1.pdf Size:166K _wietron

A1015
A1015
A1015LT1 A1015LT1 TRANSISTOR (PNP) * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V V (BR)CBO Ic= -100µA, I =0 -50 E Collector-emitter breakdown voltage V Ic= -0.1mA, I =0 - 50 V (BR)CEO B - Emitter-base breakdown voltage V(BR) I = -10µA, I =0 5 V EBO E C Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 µA Collector cut-off current I V = -50V , I =0 -0.1 CEO CE B µA Emitter cut-off current I V =- 5V , I =0 -0.1 EBO EB C µA DC current gain H V =-6V, I = -2mA 130 400 FE(1) CE C Collector-emitter saturation voltage V (sat) I =-100 mA, I = -10mA

1.13. a1015.pdf Size:334K _willas

A1015
A1015
FM120-M WILLAS THRU A1015 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 FEATURES optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. High voltage and high current • High surge capability. Excellent Guardr iLinearity oltage protection. hFE • ng for overv 0.071(1.8) • Ultra high-speed switching. Low niose 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. 1. BASE • Lead-free parts meet environmental standards of 2. EMITTER MIL-STD-19500 /228 • RoHS product for packing code suffix "G"

1.14. hsa1015.pdf Size:45K _hsmc

A1015
A1015
Spec. No. : HE6512 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.27 MICROELECTRONICS CORP. Page No. : 1/4 HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...........................

See also transistors datasheet: 2SD0602A , 2SD2098 , 2SD2114 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , AC127 , A42 , A44 , A733 , A92 , A94 , B772 , C1815 , C945 .

Keywords

 A1015 Datasheet  A1015 Datenblatt  A1015 RoHS  A1015 Distributor
 A1015 Application Notes  A1015 Component  A1015 Circuit  A1015 Schematic
 A1015 Equivalent  A1015 Cross Reference  A1015 Data Sheet  A1015 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com