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A42 Transistor (IC) Datasheet. Cross Reference Search. A42 Equivalent

Type Designator: A42

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 310

Maximum collector-emitter voltage |Uce|, V: 305

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of A42 transistor: SOT89

A42 Transistor Equivalent Substitute - Cross-Reference Search

A42 PDF:

1.1. pzta42t1g.pdf Size:90K _update

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A42

PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon http://onsemi.com Features • PZTA42T1G is Complement to PZTA92T1G SOT-223 PACKAGE • S Prefix for Automotive and Other Applications Requiring Unique NPN SILICON Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable HIGH VOLTAGE TRANSISTOR • These Devices are Pb-Free, Halogen Free/BFR Free and are R

1.2. smla42csm.pdf Size:16K _update

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SMLA42CSM SILICON NPN HIGH VOLTAGE TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) IN CERAMIC SURFACE MOUNT PACKAGE 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 3 21 FEATURES 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. • HIGH BREAKDOWN VOLTAGE (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 • LOW SATURATION VOLTAGES (0.055) 1.02 ± 0.10 max. A = • LOW CAPACITANC

1.3. pzta43_pzta42.pdf Size:157K _update

A42
A42

UNISONIC TECHNOLOGIES CO., LTD PZTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage: VCEO=300V (UTC PZTA42) 1 VCEO=200V (UTC PZTA43) SOT-223 * High current gain * Complement to UTC PZTA92/93 * Collector power dis

1.4. tip42_3ca42.pdf Size:206K _update

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TIP42(3CA42) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率线性开关。 Purpose: Medium power linear switching applications. 特点:与 TIP41(3DA41)互补。 Features: Complement to TIP41(3DA41). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 参数符号 数值 单位 Symbol Rating Unit Symbol Rating Unit TIP42 -40 V -5.0

1.5. smla42dcsm.pdf Size:10K _update

A42
A42

SMLA42DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 300V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.5A C (0.

1.6. mmbta42l_mmbta43.pdf Size:152K _motorola

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A42

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA42LT1/D High Voltage Transistors * MMBTA42LT1 NPN Silicon COLLECTOR MMBTA43LT1 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol MMBTA42 MMBTA43 Unit 2 CollectorEmitter Voltage VCEO 300 200 Vdc CollectorBase Voltage VCBO 300 200 Vdc CASE 31808, STYLE 6 EmitterBase Voltage VEB

1.7. pzta42t1.pdf Size:123K _motorola

A42
A42

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZTA42T1/D High Voltage Transistor PZTA42T1 Surface Mount Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT223 PACKAGE NPN SILICON BASE HIGH VOLTAGE 1 TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit 1 Collector-Emitter Voltage (Open Base) VCEO 300 Vdc 2 3 Collector-Base Voltag

1.8. mpsa42_mpsa43.pdf Size:121K _motorola

A42
A42

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA42/D High Voltage Transistors * MPSA42 NPN Silicon MPSA43 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol MPSA42 MPSA43 Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 300 200 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 300 200 Vdc EmitterBase Voltage

1.9. mmbta42.pdf Size:49K _philips

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A42

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional communication equ

1.10. mpsa42_mpsa43_2.pdf Size:104K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 collector 2 base APPLICATIONS 3 emitter

1.11. mpsa42_mpsa43_4.pdf Size:47K _philips

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A42

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors 1999 Apr 12 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 collector 2 base APPLICATIONS 3 em

1.12. pzta42_3.pdf Size:48K _philips2

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A42

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA42 NPN high-voltage transistor 1999 May 21 Product specification Supersedes data of 1997 Jun 16 Philips Semiconductors Product specification NPN high-voltage transistor PZTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2,4 collector APPLICATIONS 3 emitter Telepho

1.13. pmbta42ds.pdf Size:74K _philips2

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A42

PMBTA42DS NPN/NPN high-voltage double transistors Rev. 02 27 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package 1.3 Applications Automotive: High

1.14. pxta42_3.pdf Size:46K _philips2

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A42

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA42 NPN high-voltage transistor 1999 Apr 26 Product specification Supersedes data of 1997 Jun 18 Philips Semiconductors Product specification NPN high-voltage transistor PXTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS 3 base Telephony

1.15. pmsta42_pmsta43_2.pdf Size:47K _philips2

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A42

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors 1999 May 21 Product specification Supersedes data of 1997 Jun 19 Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION High voltage (max. 200 V). 1 base 2 emitter APPLICATIONS 3 co

1.16. pzta42.pdf Size:97K _philips2

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A42

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PZTA42 NPN high-voltage transistor Product data sheet 1999 May 21 Supersedes data of 1997 Jun 16 NXP Semiconductors Product data sheet NPN high-voltage transistor PZTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2,4 collector APPLICATIONS 3 emitter Telephony and

1.17. pmbta42.pdf Size:199K _philips2

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A42

PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92. 1.2 Features High voltage (max. 300 V) 1.3 Applications Telephony and professional communication equipment 1.4 Quick re

1.18. pmsta42_pmsta43.pdf Size:104K _philips2

A42
A42

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product data sheet 1999 May 21 Supersedes data of 1997 Jun 19 NXP Semiconductors Product data sheet NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION High voltage (max. 200 V). 1 base 2 emitter APPLICATIONS 3 collecto

1.19. pmbta42_3.pdf Size:47K _philips2

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A42

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA42 NPN high-voltage transistor 1999 Apr 22 Product specification Supersedes data of 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistor PMBTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telepho

1.20. pxta42.pdf Size:99K _philips2

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A42

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PXTA42 NPN high-voltage transistor Product data sheet 2004 Dec 09 Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheet NPN high-voltage transistor PXTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS 3 base Telephony and p

1.21. mmbta42.pdf Size:92K _st

A42
A42

MMBTA42 Small signal NPN transistor Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 Applications Video amplifier circuits (rgb cathode current control) SOT-23 Telephone wireline interface (hook switches, dialer circuits) Description Figure 1. Intenal schematic diagram The device is manu

1.22. stpsa42.pdf Size:59K _st

A42
A42

STPSA42 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment STPSA42 PSA42 TO-92 / Bulk STPSA42-AP PSA42 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS STPSA92 TO-92 TO-92 APPLICATIONS Bulk Ammopack VIDEO AMPLIFIER CIRCUITS (RGB CATHODE

1.23. stzta42.pdf Size:45K _st2

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A42

STZTA42 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking STZTA42 ZTA42 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE PNP COMPLEMENTARY TYPE IS 2 STZTA92 1 APPLICATIONS SOT-223 VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) TELEPHONE WIRELINE INTERFACE (HOOK SWIT

1.24. fdma420nz.pdf Size:252K _fairchild_semi

A42
A42

August 2009 FDMA420NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30m General Description Features This Single N-Channel MOSFET has been designed using RDS(on) = 30m @ VGS = 4.5 V, ID = 5.7A Fairchild Semiconductors advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special RDS(on) = 40m @ VGS = 2.5 V, ID = 5.0A MicroFET leadframe. Low Pr

1.25. mpsa42_mmbta42_pzta42.pdf Size:128K _fairchild_semi

A42
A42

October 2009 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 Mark: 1D E B C Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units

1.26. fja4210.pdf Size:200K _fairchild_semi

A42
A42

October 2008 FJA4210 PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -140 V VEBO Emi

1.27. mpsa42.pdf Size:121K _fairchild_semi

A42
A42

MPSA42 MMBTA42 PZTA42 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 300 V VCBO Collector-B

1.28. fja4213.pdf Size:93K _fairchild_semi

A42
A42

FJA4213 Audio Power Amplifier High Current Capability IC = -15A High Power Dissipation Wide S.O.A Complement to FJA4313 TO-3P 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -

1.29. 2sa1962_fja4213.pdf Size:478K _fairchild_semi

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A42

January 2009 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -17A TO-3P High Power Dissipation : 130watts 1 High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excellent Gain Linearity

1.30. smbta42m.pdf Size:27K _siemens

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A42

SMBTA 42M NPN Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA 92M (PNP) 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration Package SMBTA 42M s1D Q62702-A1243 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 V Collector-bas

1.31. pzta42.pdf Size:127K _siemens

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A42

NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types: PZTA 92, PZTA 93 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 PZTA 42 PZTA 42 Q62702-Z2035 B C E C SOT-223 PZTA 43 PZTA 43 Q62702-Z2036 Maximum Ratings Parameter Symbol Values Unit PZTA 42 PZTA 43 Collector-

1.32. smbta42.pdf Size:137K _siemens

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A42

NPN Silicon Transistors for High Voltages SMBTA 42 SMBTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA 92, SMBTA 93 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBTA 42 s1D Q68000-A6478 B E C SOT-23 SMBTA 43 s1E Q68000-A6482 Maximum Ratings Parameter Symbol Values Unit SMBTA 42 SMBTA 43 Collector-

1.33. sxta42.pdf Size:138K _siemens

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NPN Silicon High Voltage Transistors SXTA 42 SXTA 43 High breakdown voltage Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SXTA 42 1D Q68000-A8394 B C E SOT-89 SXTA 43 1E Q68000-A8650 Maximum Ratings Parameter Symbol Values Unit SXTA 42 SXTA 43 Collector-emitter voltage VCE0 300 200 V Collector-base voltage VCB0 3

1.34. sia421dj.pdf Size:176K _vishay

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1.35. sia429dj.pdf Size:154K _vishay

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1.36. sia426dj.pdf Size:216K _vishay

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1.37. mpsa42_mpsa43npn.pdf Size:43K _central

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A42

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.38. cmpta42_cmpta92.pdf Size:322K _central

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A42

CMPTA42 NPN CMPTA92 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY DESCRIPTION: HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CMPTA42 and SILICON TRANSISTORS CMPTA92 are complementary surface mount epoxy molded silicon planar epitaxial transistors designed for high voltage applications. MARKING CODES: CMPTA42: C1D CMPTA92: C2D SOT-23 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL CMPTA42 C

1.39. dzta42.pdf Size:233K _diodes

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A42

DZTA42 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary PNP Type Available (DZTA92) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 "Green" Device (Note 2) SOT-223 Mechanical Data COLLECTOR 3 E 2,4 Case:

1.40. mmsta42.pdf Size:112K _diodes

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MMSTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary PNP Type Available (MMSTA92) C Dim Min Max Ideal for Low Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B C B 1.15 1.35 Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 "Green" Device (Note 3 and 4) B E D 0.65 N

1.41. dxta42.pdf Size:149K _diodes

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A42

DXTA42 NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Complementary PNP Type Available (DXTA92) Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sen

1.42. mmdta42.pdf Size:103K _diodes

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MMDTA42 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-26 Ideal for Medium Power Amplification and Switching Dim Min Max Typ Lead Free/RoHS Compliant (Note 3) A 0.35 0.50 0.38 "Green" Device, Note 4 and 5 B C B 1.50 1.70 1.60 Mechanical Data C 2.70 3.00 2.80 Case: SOT-26 D ? ? 0.95 Case Material: Molded Plas

1.43. fzta42.pdf Size:125K _diodes

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A42

SOT SI I O A A ZTA HI H O TA T A SISTO ISSUE 3 SEPTEMBER 2007 T i I i i TV i Ii i I I T T T T I D T I D VI T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V

1.44. fxta42.pdf Size:25K _diodes

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A42

NPN SILICON PLANAR FXTA42 HIGH VOLTAGE TRANSISTOR ISSUE 1 SEPT 93 T V I V I TI T I i II i i T E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T 8 i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I

1.45. mmbta42_2.pdf Size:105K _diodes

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A42

MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A Complementary PNP Type Available (MMBTA92) SOT-23 C Ideal for Low Power Amplification and Switching Dim Min Max B C Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes 4 and 5) TOP V

1.46. sxta42.pdf Size:25K _diodes

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A42

SOT8 SI I O A A S TA HI H O TA T A SISTO ISS A A Y 6 T T T T I D T I ID SOT8 A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i V I i V V I I i V I i I V V T

1.47. smbta42_mmbta42.pdf Size:69K _infineon

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A42

SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage 2 3 Complementary types: 1 SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA42/MMBTA42 s1D SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter voltage VCEO 300 Co

1.48. pzta42.pdf Size:65K _infineon

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PZTA42 NPN Silicon High-Voltage Transistors High breakdown voltage 4 3 Low collector-emitter saturation voltage 2 1 Complementary type: PZTA92 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package PZTA42 PZTA42 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter voltage VCEO

1.49. ixta42n25p_ixtp42n25p_ixtq42n25p.pdf Size:252K _ixys

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A42

IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET ? ? IXTQ 42N25P RDS(on) ? 84 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V (TAB) VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 30 V ID25 TC = 25 C42 A IDM T

1.50. mmsta42_sot-323.pdf Size:194K _mcc

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MCC TM Micro Commercial Components MMSTA42 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Small Signal RoHS Compliant. See ordering information) Epitaxial Planar Die Construction Transistors Ideal for Medium Power Amplification and Switching

1.51. mpsa42_mpsa43_to-92.pdf Size:233K _mcc

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MPSA42 MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 MPSA43 Fax: (818) 701-4939 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Voltage Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 625mW Lead Free Finish/RoHS Compliant ("P

1.52. mmbta42_sot-23.pdf Size:209K _mcc

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MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMBTA42 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon High RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Voltage Transistor Moisure Sensitivity Level 1 Capable

1.53. pzta42t1.pdf Size:103K _onsemi

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PZTA42T1 High Voltage Transistor Surface Mount NPN Silicon http://onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-223 PACKAGE Compliant NPN SILICON HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS (TC = 25C unless otherwise noted) SURFACE MOUNT Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc (Open Base) COLLECTOR 2, 4 Collector-Base

1.54. mpsa42_mpsa43.pdf Size:102K _onsemi

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MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 1 MPSA43 200 EMITTER MPSA42 300 Collector-Base Voltage VCBO Vdc MPSA43 200 MPSA42 300 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 500 mAdc TO-92

1.55. mmbta42lt1_mmbta43lt1.pdf Size:89K _onsemi

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MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 Characteristic Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO Vdc MMBTA42 300 MMBTA43 200 3 Collector-Base Voltage VCBO Vdc MMBTA42 300 MMBTA43 200 1 2 Emitter-Base V

1.56. mmbta42.pdf Size:102K _utc

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UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain * Collector Dissipation: Pc (max) =350mW Lead-free: MMBTA42L Halogen-free: MMBTA42G ORDERING INFORMATIO

1.57. mpsa42_mpsa43.pdf Size:17K _utc

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UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MPSA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES *Collector-Emitter voltage: 1 VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43) *High current gain *Complement to UTC MPSA92/93 TO-92 *Collector Dissipation: Pc(max)=625mW 1:EMITTER 2:BASE 3:

1.58. smla42csm.pdf Size:16K _semelab

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SMLA42CSM SILICON NPN HIGH VOLTAGE TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) IN CERAMIC SURFACE MOUNT PACKAGE 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 3 21 1.91 ± 0.10 FEATURES (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) • HIGH BREAKDOWN VOLTAGE 1.40 (0.055) 1.02 ± 0.10 max. A = • LOW SATURATION VOLTAGES (0.04 ± 0.004)

1.59. bcpa42.pdf Size:321K _secos

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BCPA42 NPN Epitaxial Planar Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES The BCPA42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. PACKAGE DIMENSIONS SOT-89 A C D Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.60 G

1.60. mmbta42w.pdf Size:132K _secos

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MMBTA42W NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42W 120 VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25°C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.61. mmbta42.pdf Size:282K _secos

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MMBTA42 NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42 120 VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25°C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VR

1.62. pzta42.pdf Size:751K _secos

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PZTA42 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone. Millimeter Millimeter REF. REF. A 4 2 Min. Max. Min. Max. Date Code A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. B C E D 0.02 0.

1.63. mpsa42.pdf Size:112K _secos

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MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter ?? J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. Collector H 1.10 - J 2.

1.64. mpsa42_43.pdf Size:190K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42 MPSA 43 TO-92 CBE C B E High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL MPSA42 MPSA43 UNIT Collector -Emitter Voltage VCEO 300 200 V Collector -Base Voltage VCBO 300 200 V Emitter -Base

1.65. pzta42.pdf Size:203K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA42 SOT-223 Formed SMD Package For use in Telephony and Professional Communication Equipment Complementary PZTA92 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 300 V VCEO Collector

1.66. cmbta42_43.pdf Size:235K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking PACKAGE OUTLINE DETAILS CMBTA42 = 1D ALL DIMENSIONS IN mm CMBTA43 = 1E Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT A42 A43 Collector–base v

1.67. mmbta42_mmbta43.pdf Size:235K _kec

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SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA92/93. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10

1.68. pzta42.pdf Size:180K _kec

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A42

SEMICONDUCTOR PZTA42 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A TELEPHONE APPLICATION. H L 2 FEATURES Complementary to PZTA92. K E B 1 3 J MAXIMUM RATING (Ta=25 ) G F F CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 300 V DIM MILLIMETERS 1 2 3 _ A 6.5 + 0.2 VCEO Collector-Emitter Voltage 300 V C _ B 3.5 + 0.2 C 1.8 MAX V

1.69. mpsa42_mpsa43.pdf Size:233K _kec

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SEMICONDUCTOR MPSA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B C FEATURES Complementary to MPSA92/93. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA42 300 H 0.45 Collector-Base _ VCBO H V J 14.00 + 0.50 Voltage

1.70. sta421a.pdf Size:30K _sanken-ele

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PNP General purpose External dimensions STA (10-pin) STA421A D Electrical characteristics Absolute maximum ratings (Ta=25C) (Ta=25C) Specification Symbol Ratings Unit Symbol Unit Conditions min typ max VCBO 60 V ICBO 100 AVCB=60V VCEO 60 V IEBO 100 AVEB=6V VEBO 6V VCEO 60 V IC=25mA IC 3A hFE 40 VCE=4V, IC=1A ICP 6 (PW?10ms, Du?50%) A VCE(sat) 1.0 V IC=2A, IB=0

1.71. mmsta42.pdf Size:610K _htsemi

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MMSTA42 TRANSISTOR(NPN) SOT-323 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Col

1.72. mmbta42.pdf Size:1026K _htsemi

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MMBTA42 TRANSISTOR(NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V IC Col

1.73. a42.pdf Size:184K _htsemi

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A42 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Low Collector-Emitter Saturation Voltage 2. COLLECTOR High Breakdown Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipa

1.74. mmbta42.pdf Size:291K _gsme

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A42

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA42 GMA43 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Unit GMA42 GMA43 ???? ?? ?? Collector-Emitter Voltage VCEO 300 200 Vdc ???-???? Collector-Base Voltage VCBO 300 200 Vdc ???-??? Emitter-Base Vol

1.75. mmsta42.pdf Size:215K _lge

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A42

MMSTA42 SOT-323 Transistor (NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 3

1.76. mmbta42.pdf Size:193K _lge

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A42

MMBTA42 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300

1.77. pzta42.pdf Size:210K _lge

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PZTA42 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA92(PNP) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimeters)

1.78. a42.pdf Size:220K _lge

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A42

A42(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 625 mW Dimensions in inc

1.79. pzta42.pdf Size:295K _wietron

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A42

PZTA42 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 300 VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 6 V IC(DC) Collector Current (DC) 500 mA PD Total Device Disspation TA=25?C

1.80. mpsa42.pdf Size:155K _wietron

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A42

MPSA42 General Purpose Transistors NPN Silicon TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 310 V Collector-Emitter Voltage VCEO 305 V Emitter-Base Voltage VEBO 5 V IC Collector Current -Continuous 500 mA Junction and Storage Temperature TJ, Tstg -55-150 ? Thermal Resistan

1.81. mmbta42-43.pdf Size:182K _wietron

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MMBTA42 MMBTA43 COLLECTOR High-Voltage NPN Transistor 3 3 Surface Mount 1 1 BASE 2 P b Lead(Pb)-Free 2 EMITTER SOT-23 Maximum Ratings (T =25°C Unlesso therwise noted) A Rating Symbol Value Unit Collector-Emitter Voltage MMBTA42 300 V V CEO MMBTA43 200 Collector-Base Voltage MMBTA42 300 V V CBO MMBTA43 200 Emitter-Base Voltage MMBTA42 6.0 V EBO V MMBTA43 6.0 Coll

1.82. mxta42.pdf Size:89K _wietron

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A42

MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 300 CEO Vdc VCBO Collector-Base Voltage 300 Vdc Emitter-Base Voltage VEBO 5.0 Vdc mAdc Collector Current-Continuous IC 500 Thermal Characteristics Characteristics Symbol Max Unit Tota

1.83. hmpsa42.pdf Size:47K _hsmc

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Spec. No. : HE6333 HI-SINCERITY Issued Date : 1992.11.18 Revised Date : 2004.07.21 MICROELECTRONICS CORP. Page No. : 1/4 HMPSA42 NPN EPITACIAL PLANAR TRANSISTOR Description The HMPSA42 is high voltage transistor. Features TO-92 • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • For Complementary Use with PNP Type HMPSA92 Absolute Maximum Ra

1.84. hmbta42.pdf Size:36K _hsmc

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A42

Spec. No. : HE6848 HI-SINCERITY Issued Date : 1994.07.29 Revised Date : 2004.08.17 MICROELECTRONICS CORP. Page No. : 1/4 HMBTA42 NPN EPITACIAL PLANAR TRANSISTOR Description High Voltage Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature..................................................................................................................

1.85. btna42a3.pdf Size:242K _cystek

A42
A42

Spec. No. : C209A3-H Issued Date : 2003.03.18 CYStech Electronics Corp. Revised Date : 2013.11.06 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA42A3 Description • High breakdown voltage. (BV =300V) CEO • Low collector output capacitance. (Typ. 3pF at V =30V) CB • Ideal for chroma circuit. • Pb-free lead plating and halogen-free package Symbo

1.86. mmbta42_sot-23.pdf Size:222K _can-sheng

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A42

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING:1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号)

1.87. a42.pdf Size:284K _can-sheng

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A42

TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) TO-92 TO-92 FEATURES TO-92 FEATURES TO-92 FEATURES FEATURES High voltage High voltage High voltage High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS (T =25℃ unless otherwise noted) MAXIMUM RATINGS (T =25℃ unless otherwise noted) A A 1. E

1.88. mpsa42i.pdf Size:513K _blue-rocket-elect

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A42

MPSA42I(BR3DG42I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-251 Plastic Package. 特征 / Features 耐压高,饱和压降低,集电极输出电容低,与 MPSA92I(BR3CG92I)互补。 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MPSA92I(BR3CG92I).

1.89. mmbta42t.pdf Size:786K _blue-rocket-elect

A42
A42

MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 耐压高,饱和压降低,集电极输出电容低,与 MMBTA92T(BR3CG92T)互补。 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T).

1.90. mpsa42d.pdf Size:442K _blue-rocket-elect

A42
A42

MPSA42D(BR3DG42D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 特征 / Features 耐压高,饱和压降低,集电极输出电容低,与 MPSA92D(BR3CG92D)互补。 High voltage, low saturation voltage, low collector output capacitance, complementary pair with MPSA42D(BR3DG42D).

1.91. lmbta42lt1g.pdf Size:390K _lrc

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A42

LESHAN RADIO COMPANY, LTD. High Voltage Transistors We declare that the material of product compliance with RoHS requirements. LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1G Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBTA42LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping S-LMB

1.92. sm1a42csk.pdf Size:215K _sino

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A42

SM1A42CSK ® Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N Channel D1 D1 D2 100V/2.5A, D2 RDS(ON) = 150mΩ (max.) @ VGS = 10V RDS(ON) = 170mΩ (max.) @ VGS = 4.5V S1 G1 P Channel S2 G2 -100V/-2.2A, Top View of SOP-8 RDS(ON) = 205mΩ (max.) @ VGS =-10V (8) (7) (6) (5) RDS(ON) = 240mΩ (max.) @ VGS =-4.5V D1 D1 D2 D2 100% UIS + Rg Tested

1.93. dta401-dta411_dta417_dta422-dta423.pdf Size:708K _first_silicon

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A42

DTA401~411 / DTA417 SEMICONDUCTOR TECHNICAL DATA DTA422~423 Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 2 consisti

1.94. mmbta42f.pdf Size:222K _first_silicon

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A42

SEMICONDUCTOR MMBTA42F TECHNICAL DATA TRANSISTOR (NPN) MMBTA42F A C H G FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage D D K F F MARKING : A42 DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 T

1.95. dwa401-dwa412_dwa417_dwa422_dwa423.pdf Size:696K _first_silicon

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A42

SEMICONDUCTOR DWA401~412 TECHNICAL DATA DWA417,422,423 Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace

1.96. mmbta42.pdf Size:196K _first_silicon

A42
A42

SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA High Voltage Transistors We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel 2 MMBTA42LT3G 1D SOT-23 10000/Tape&Reel 1 MMBTA43LT1G M1E SOT-23 3000/Tape&Reel SOT-23 10000/Tape&Reel SOT–23 MMBTA43LT3G M1

1.97. mpsa42.pdf Size:299K _first_silicon

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A42

SEMICONDUCTOR MPSA42 TECHNICAL DATA MPSA42 TRANSISTOR (NPN) B C FEATURES High voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) F 1.27 G 0.85 H 0.45 Symbol Parameter Value Unit _ H J 14.00 0.50 + L 2.30 F F VCBO Collector-Base Voltage 300 V M 0.51 MAX VCEO Collector-Emitter Voltage 3

1.98. mmsta42.pdf Size:870K _kexin

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A42

SMD Type Transistors NPN Transistors MMSTA42 (KMSTA42) ■ Features ● High Breakdown Voltage ● Low Collector-Emitter Saturation Voltage ● Complementary to MMSTA92 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltage VEBO 5 Colle

1.99. mmbta42w.pdf Size:988K _kexin

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SMD Type Transistors NPN Transistors MMBTA42W (KMBTA42W) ■ Features ● Collector-emitter voltage VCE = 300V ● Collector current IC = 500mA 3 ● NPN high voltage transistors COLLECTOR 1 BASE 1 Base 2 Emitter 3 Collector 2 EMITTER ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30

1.100. mmbta42.pdf Size:1393K _kexin

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A42

SMD Type Transistors NPN Transistors MMBTA42 (KMBTA42) SOT-23 Unit: mm +0.1 2.9 -0.1 ■ Features +0.1 0.4 -0.1 ● High breakdown voltage 3 ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Co

1.101. pzta42.pdf Size:298K _kexin

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A42

SMD Type Transistors NPN Transistors PZTA42 (KZTA42) Unit:mm SOT-223 6.50±0.2 3.00±0.1 4 ■ Features ● High breakdown voltage ● Low collector-emitter saturation voltage 1 2 3 ● Complementary to PZTA92 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70±0.1 3.Emitter 4.60 (typ) 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

1.102. mmbta42.pdf Size:268K _shenzhen-tuofeng-semi

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A42

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector

1.103. mpsa42.pdf Size:237K _shenzhen-tuofeng-semi

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A42

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA42 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150

See also transistors datasheet: 2SD2098 , 2SD2114 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , A1015 , 2N3563 , A44 , A733 , A92 , A94 , B772 , C1815 , C945 , CJF715 .

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