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A44 Transistor (IC) Datasheet. Cross Reference Search. A44 Equivalent

Type Designator: A44

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc), W: 0.5

Maximum Collector-Base Voltage |Vcb|, V: 500

Maximum Collector-Emitter Voltage |Vce|, V: 400

Maximum Emitter-Base Voltage |Veb|, V: 6

Maximum Collector Current |Ic max|, A: 0.3

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz:

Collector Capacitance (Cc), pF: 7

Forward Current Transfer Ratio (hFE), min: 50

Noise Figure, dB: -

Package: SOT89

A44 Transistor Equivalent Substitute - Cross-Reference Search

A44 PDF:

1.1. pxta44.pdf Size:104K _update

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MCC Micro Commercial Components TM PXTA44 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN Silicon High Low Collector-Emitter Saturation Voltage Voltage Transistor Epoxy meets UL 94V-0 flammability rating Moisure Sensitivity Level 1 500mW • Lead Free Finish/RoHS Compliant("P" Suffix designates

1.2. pzta45_pzta44.pdf Size:106K _update

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UNISONIC TECHNOLOGIES CO., LTD PZTA44/45 NPN SILICON TRANSISTOR NPN HIGH VOLTAGE TRANSISTOR FEATURES * Collector-emitter voltage: V =400V(PZTA44) CEO V =350V(PZTA45) CEO * Collector current up to 300mA APPLICATION * Telephone switching * High voltage switch ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

1.3. mpsa44re.pdf Size:170K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA44/D High Voltage Transistor NPN Silicon MPSA44 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 400 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 500 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Curre

1.4. mpsa44_4.pdf Size:47K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA44 NPN high-voltage transistor 1999 Apr 27 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN high-voltage transistor MPSA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 collector 2 base APPLICATIONS 3 emitter Telecommu

1.5. pzta44_4.pdf Size:48K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA44 NPN high-voltage transistor 1999 May 21 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN high-voltage transistor PZTA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Teleco

1.6. pmbta44.pdf Size:96K _philips2

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PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qualifie

1.7. pzta44.pdf Size:107K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PZTA44 NPN high-voltage transistor Product data sheet 1999 May 21 Supersedes data of 1998 Nov 26 NXP Semiconductors Product data sheet NPN high-voltage transistor PZTA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Telecommunic

1.8. fqa44n30.pdf Size:754K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 120 nC) planar stripe, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has been especially

1.9. fqa44n10.pdf Size:570K _fairchild_semi

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December 2000 TM QFET QFET QFET QFET FQA44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is especially tailor

1.10. sia443dj.pdf Size:188K _vishay

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1.11. sia444djt.pdf Size:153K _vishay

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1.12. czta44hc.pdf Size:596K _central

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CZTA44HC SURFACE MOUNT www.centralsemi.com HIGH CURRENT DESCRIPTION: HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CZTA44HC type is NPN SILICON TRANSISTOR a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage and high current applications. MARKING: FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Colle

1.13. czta44.pdf Size:527K _central

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CZTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING: FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 450 V

1.14. cmpta44.pdf Size:321K _central

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CMPTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z SOT-23 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 450 V Collector-Emitter Vo

1.15. mpsa44-d.pdf Size:66K _onsemi

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MPSA44 Preferred Device High Voltage Transistor NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 400 Vdc 2 BASE Collector -Base Voltage VCBO 500 Vdc Emitter -Base Voltage VEBO 6.0 Vdc 1 Collector Current - Continuous IC 300 mAdc EMITTER Total Device Dissipation @ TA = 25

1.16. mpsa44_mpsa45-utc.pdf Size:30K _utc

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UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V(MPSA44) VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW APPLICATION *Telephone switching TO-92 *High voltage switch 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range

1.17. mpsa44h.pdf Size:176K _utc

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UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage:* V =400V CEO * Collector Current up to 300mA ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA44HL-AB3-R MPSA44HG-AB3-R SOT-89 B C E Tape Reel MPSA44HL-T92-B MPSA44HG-T92-B TO-92 E B C Tape Box MP

1.18. mpsa44.pdf Size:437K _secos

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MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter ?? J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. Collector H 1.10 - J 2.

1.19. mmbta44.pdf Size:441K _secos

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MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES ? High Voltage Transistor A L 3 3 MARKING Top View C B 1 1 2 3D 2 K E D PACKING INFORMATION Collector H J F G ?? Package MPQ Leader Size Millimeter Millimeter REF. REF. SOT-23 3K 7 inch Min. M

1.20. mpsa44_45.pdf Size:273K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package C B E High Voltage Transistors Complementary of MPSA44 is MPSA94 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MPSA44 MPSA45 UNITS VCBO Collector Base Voltage 500 400 V VCEO Collector Emitter Voltage 400 350 V VEBO E

1.21. cmbta44.pdf Size:134K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 Marking Code is =3Z Designed for Extremely High Voltage Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNITS Collector Base Volt

1.22. pzta44.pdf Size:392K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 500 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 6.0 V IC Collector Current (DC) 300 mA Col

1.23. mpsa44_mpsa45.pdf Size:359K _kec

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SEMICONDUCTOR MPSA44/45 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=625mW. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA44 500 H 0.45 Collector-Base _ VCBO H V J 14.00 +

1.24. pzta44.pdf Size:39K _kec

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SEMICONDUCTOR PZTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A TELEPHONE APPLICATION. H L 2 FEATURES High Breakdown Voltage. K E B Collector Power Dissipation : PC=2W(TC=25 ) 1 3 J G F F MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS 1 2 3 _ CHARACTERISTIC SYMBOL RATING UNIT A 6.5 + 0.2 C _ B 3.5 + 0.2 VCBO Collector-Base Voltage 500 V C 1.8 MA

1.25. mmbta44.pdf Size:315K _kec

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SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=350mW. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-BaseVoltage 450 V VCEO Collector-EmitterVoltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC * Collector Power Dissipat

1.26. a44.pdf Size:173K _htsemi

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A44 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low Collector-Emitter Saturation Voltage High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collector P

1.27. mmbta44.pdf Size:694K _htsemi

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MMBTA44 TRANSISTOR(NP) SOT–23 FEATURES ? High Collector-Emitter Voltage ? Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 100 mA C P Collector Po

1.28. mmbta44.pdf Size:235K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA44 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic ???? Symbol ?? Rating ??? Unit ?? VCEO 400 V Collector-Emitter Voltage ???-???? Collector-Base Voltage ???-??? VCBO 400 V Emitter-Base Voltage ???-???? VEBO 7 V

1.29. a44.pdf Size:356K _lge

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A44(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 0.2 A Dimensions in inches and (millimeters) Collector Power D

1.30. pzta44.pdf Size:490K _lge

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PZTA44 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Low current : 300mA(max) High voltage: VCEO=400V MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 6 V IC Collector Current

1.31. mpsa44.pdf Size:911K _wietron

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MPSA44 High-Voltage NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 400 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperatu

1.32. pzta44.pdf Size:268K _wietron

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PZTA44 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 400 VCBO Collector-Base Voltage 500 V VEBO Emitter-Base Voltage 6 V IC(DC) Collector Current (DC) 300 mA PD Total Device Disspation TA=25?C

1.33. wtma44.pdf Size:178K _wietron

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WTMA44 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 *Low Collector-Emitter Saturation Voltage 2 1. BASE 3 2. COLLECTOR *High Breakdown Voltage 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 500 VCEO V Collector-Emitter Voltage 400 VEBO V Emitter-Base Voltage 6 Collector Current IC 300 mA Collector Power D

1.34. mmbta44.pdf Size:258K _wietron

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MMBTA44 COLLECTOR 3 High-Voltage NPN Transistor SOT-23 3 Surface Mount 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit C ollector-E mitter V oltage V 400 Vdc CEO C ollector-B ase V oltage VCBO 450 Vdc E mitter-B as e V Oltage VEBO 6.0 Vdc C ollector C urrent-C ontinuous IC 300 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation

1.35. hmbta44.pdf Size:37K _hsmc

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Spec. No. : HN200208 HI-SINCERITY Issued Date : 1993.06.23 Revised Date : 2004.09.08 MICROELECTRONICS CORP. Page No. : 1/4 HMBTA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTA44 is designed for application requires high voltage. Features SOT-23 • High voltage: VCEO=400V(min) at IC=1mA • High current: IC=300mA at 25°C • Complementary with HMBTA94 Absolute Maximum Rati

1.36. hmpsa44.pdf Size:47K _hsmc

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Spec. No. : HE6358 HI-SINCERITY Issued Date : 1993.01.15 Revised Date : 2004.07.21 MICROELECTRONICS CORP. Page No. : 1/4 HMPSA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44 is designed for application that requires high voltage. Features TO-92 • High Breakdown Voltage: 400(Min) at IC=1mA • High Current Gain: IC=300mA at 25°C • Complementary to HMPSA94 Absolute Max

1.37. btna44a3.pdf Size:243K _cystek

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Spec. No. : C211A3 Issued Date : 2003.03.026 CYStech Electronics Corp. Revised Date :2013.11.20 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features • High breakdown voltage. (BV =400V) CEO • Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= • Complementary to BTPA94A3 • Pb-free lead plating and halogen-free packag

1.38. btna44n3.pdf Size:255K _cystek

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Spec. No. : C210N3-H Issued Date : 2003.06.12 CYStech Electronics Corp. Revised Date : 2010.07.14 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400V IC 300mA BTNA44N3 RCESAT(typ.) 10Ω Features • High breakdown voltage. (BV =400V) CEO • Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. • Complementary to BTPA94N3 •

1.39. btna44m3.pdf Size:234K _cystek

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Spec. No. : C211M3 Issued Date : 2013.05.09 CYStech Electronics Corp. Revised Date : 2013.08.05 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features • High breakdown voltage. (BV = 400V) CEO • Low saturation voltage, typically V C B CE(sat) = 60mV at I /I =10mA/1mA. • Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 B:Base

1.40. bta4403a3.pdf Size:248K _cystek

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Spec. No. : C305A3 Issued Date : 2007.10.16 CYStech Electronics Corp. Revised Date : 2012.04.12 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA4403A3 Description • The BTA4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA

1.41. sta4470.pdf Size:143K _samhop

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STA4470 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 12 @ VGS=10V Suface Mount Package. 40V 11A 16 @ VGS=4.5V PDIP-8 1 (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS

1.42. a44.pdf Size:458K _can-sheng

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TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN) FEATURES TO-92 FEATURES TO-92 FEATURES TO-92 FEATURES TO-92 � High voltage � High voltage � High voltage � High voltage MAXIMUM RATINGS ( MAXIMUM RATINGS ( MAXIMUM RATINGS ( 1. EM T T E R MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter Value Units Symbol Parameter Value Units Symbol Pa

1.43. mmbta44t.pdf Size:477K _blue-rocket-elect

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MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 耐压高。 High voltage. 用途 / Applications 高电压控制电路。 High voltage control circuit. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base

1.44. mmbta44n.pdf Size:488K _blue-rocket-elect

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MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-223 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-223 Plastic Package. 特征 / Features 耐压高。 High voltage. 用途 / Applications 高电压控制电路。 High voltage control circuit . 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:B

1.45. lmbta44lt1g.pdf Size:94K _lrc

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LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application 1 that requires high voltage. 2 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA SOT– 23 • Complementary to LMBTA94LT1G • S- Prefix

1.46. mpsa44.pdf Size:170K _first_silicon

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SEMICONDUCTOR MPSA44 TECHNICAL DATA MPSA44 TRANSISTOR (NPN) B C FEATURES High Breakdown Voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) L 2.30 F F M 0.51 MAX Symbol Parameter Value Unit 1 2 3 1. EMITTER VCBO Collector-Base Voltage 500 V

1.47. mmbta44.pdf Size:189K _first_silicon

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SEMICONDUCTOR MMBTA44 TECHNICAL DATA NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description 2 The MMBTA44 is designed for application that requires high voltage. 1 Features SOT– 23 • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to MMBTA94 COLLECTOR 3 DEVICE MARKING 1 MMBTA44 = 3D B

1.48. cxta44.pdf Size:1127K _kexin

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SMD Type Transistors NPN Transistors CXTA44 (KXTA44) 1.70 0.1 ■ Features ● Low Collector-Emitter Saturation Voltage ● High Breakdown Voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltage VEBO 6 Collecto

1.49. mmbta44.pdf Size:1104K _kexin

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SMD Type Transistors NPN Transistors MMBTA44 (KMBTA44) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High Collector-Emitter Voltage 1 2 +0.1 +0.05 ● Complement to MMBTA94 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

1.50. mpsa44.pdf Size:654K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) MPSA44 TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Co

See also transistors datasheet: 2SD2114 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , A1015 , A42 , BU508A , A733 , A92 , A94 , B772 , C1815 , C945 , CJF715 , D882 .

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